Schottky Barrier Diodes (SBD)
MA3X748
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.65
±
0.15
2.8
+
0.2
−
0.3
+
0.25
1.5
−
0.05
0.65
±
0.15
•
Low V
F
type of MA2Z720
•
High rectification efficiency caused by its low forward-rise-
voltage (V
F
)
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
rr
)
0.95
1.9
±
0.2
2.9
−
0.05
1
3
2
+
0.2
0.95
1.45
0 to 0.1
I
Features
+
0.2
−
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
20
20
500
3
125
−55
to
+125
Unit
V
V
mA
A
°C
°C
0.1 to 0.3
0.4
±
0.2
1.1
0.8
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M4E
Internal Connection
1
3
2
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
V
R
= 10 V
I
F
= 500 mA
I
F
= 10 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
Conditions
Min
Typ
Max
30
0.5
0.3
0.16
−
0.06
+
0.1
0.4
−
0.05
+
0.1
Unit
µA
V
V
pF
ns
60
5
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
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