Band Switching Diodes
MA3Z080D, MA3Z080E
(MA80WA, MA80WK)
Silicon epitaxial planar type
Unit: mm
(0.425)
For band switching
s
Features
•
Low forward dynamic resistance r
f
•
Less voltage dependence of diode capacity C
D
•
S-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5˚
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Forward current (DC)
Operating ambient temperature
*
Storage temperature
Symbol
V
R
I
F
T
opr
T
stg
Rating
35
100
−25
to
+85
−55
to
+150
Unit
V
mA
°C
°C
10˚
0 to 0.1
0.9
±0.1
EIAJ: SC-70
SMini3-G1 Package
Note) *: Maximum ambient temperature during operation
Marking Symbol
•
MA3Z080D:
M1X
•
MA3Z080E:
M1Y
Internal Connection
3
3
1
D
2
0.9
+0.2
–0.1
MA3Z080D MA3Z080E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
1
E
2
s
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Diode capacitance
Forward dynamic resistance
*
Symbol
I
R
V
F
C
D
r
f
V
R
=
33 V
I
F
=
100 mA
V
R
=
6 V, f
=
1 MHz
I
F
=
2 mA, f
=
100 MHz
Conditions
Min
Typ
0.01
0.92
0.9
0.65
Max
100
1.0
1.2
0.85
Unit
nA
V
pF
Ω
Note) 1. Each characteristic is a standard for individual diode
2. Rated input/output frequency: 100 MHz
3. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2002
SKG00013BED
0.2
±0.1
1
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•
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2001 MAR
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