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TGL41-24AE3

产品描述Trans Voltage Suppressor Diode, 500W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB,
产品类别分立半导体    二极管   
文件大小187KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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TGL41-24AE3概述

Trans Voltage Suppressor Diode, 500W, 20.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB,

TGL41-24AE3规格参数

参数名称属性值
厂商名称Microsemi
包装说明O-PELF-R2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压25.2 V
最小击穿电压22.8 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-213AB
JESD-30 代码O-PELF-R2
最大非重复峰值反向功率耗散500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散3 W
最大重复峰值反向电压20.5 V
表面贴装YES
技术AVALANCHE
端子形式WRAP AROUND
端子位置END
Base Number Matches1

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TGL41-6.8 thru TGL41-200CA
500 Watt Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
This series of 500 W Transient Voltage Suppressors (TVSs) provides the
highest level of Peak Pulse Power (P
PP
) in the industry for the DO-213AB
size MELF package. These P
PP
levels offer protection from switching
transients, induced RF, secondary lightning, as well as ESD or EFT where
these devices are also compliant to IEC61000-4-2 and IEC61000-4-4. In
addition to unidirectional TVS configurations, this series also offers
bidirectional options with C or CA suffix. Its configuration in a MELF
package prevents lead damage to terminals and also reduces inductive
parasitics for minimal transient voltage overshoots.
APPEARANCE
WWW.
Microsemi
.
C O M
DO-213AB
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Economical series for 500 Watt Surface Mount
transient voltage suppressor.
Available in Both Unidirectional and Bidirectional
Construction. Bidirectional has a C or CA suffix.
6.8 to 200 Volts Available.
500 Watts Peak Power Dissipation.
Fast Response Time: Subnanosecond Response
(Unipolar) or 5.0 ns (Bipolar).
Plastic package has flame retardant epoxy meeting
UL94V-0
APPLICATIONS / BENEFITS
For Surface Mount Applications
Protection from switching transients, induced
RF, secondary lightning, as well as ESD, and
EFT per IEC 61000-4-2 and IEC 6100-4-4
Very low inductive parasitics with minimal
Ldi/dt voltage overshoots for fast-rise-time
transients
Robust package for pick-and-place handling
MAXIMUM RATINGS @ 25
o
C*
Peak Pulse Power Dissipation (P
PP
) - 500 W (Note
1 & 5).
Peak Forward Surge Current (I
FSM
) - 40 A (Note 3)
Peak Pulse Current (I
PP
) at 10/1000
µs
waveform -
see Table 1 (Note 1)
Steady-State Power Dissipation, P
(AV)
- 3.0W (Note
2, 4)
Operating and Storage temperatures, T
OP
, T
STG
o
o
(-55 C to +150 C)
Thermal Resistance junction to end cap (R
?
JEC
) –
o
15 C/W
1.
2.
3.
4.
5.
MECHANICAL AND PACKAGING
Molded epoxy package meets UL94V-0
End-Cap terminals solderable per MIL-STD-750,
o
Method 2026 (max 260 C for 10 seconds.
Polarity is indicated by cathode band. Bidirectional
devices have no polarity band.
Body marked with P/N without TGL41 prefix.
Weight: 0.06 grams (approximate)
Tape and Reel packaging per EIA-481-2 with 12
mm tape with 5000 per 13 inch reel.
TGL41-6.8 thru 200CA
*
Unless otherwise specified.
NOTES:
Non-repetitive current pulse, per Figure 3 and derated above TA = 25 C per Figure 2.
2
Mounted on 4.0 mm copper pads to each terminal. (See Figure 3)
8.3 ms single half-sine wave duty cycle = 4 pulses per minute max. Peak forward voltage at 40 A is 3.5 volts (unipolar only)
o
o
Derate linearly above 100 C to zero at 150 C for dc steady-state power. Also see Figure 2 for transient derating.
Peak pulse current waveform is 10/1000
µs,
with maximum duty cycle of 0.01%. (See Figure 4)
o
Copyright
©
2003
01-29-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

 
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