PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
MA4BPS101, MA4BPS201, MA4BPS301
PIN Diode Chips with
Offset Bond Pads
Features
•
•
•
•
•
Bond Pads Removed From Active Junction
Large Bond Pads Support Multiple Bond Wires
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polyimide Scratch Protection
Chip Layout
Description
These silicon - glass PIN diode chips are fabricated with
M/A-COM’s patented HMIC™ process. They contain a single
shunt silicon PIN diode embedded in a glass substrate with dual
75 x 150 micron bond pads located near the chip edges. The large
pads allow use of multiple bond wires. The location of these pads
on a glass substrate results in low parasitic capacitance. The
diode junction is passivated with silicon nitride and a layer of
polyimide has been added for scratch protection during assembly.
The devices are available on industry standard tape frame for
automatic insertion and assembly in high volume applications.
Absolute Maximum Rating
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
Incident RF Power
Mounting Temperature
1
Applications
These diodes are designed for use as general PIN elements in
switches and switched pad attenuators. The chips can handle up
to 10 watts of RF power, and are well suited for use in T/R
switches for subscriber phones, particularly the higher power and
higher frequency systems for satellite based systems. They are
also useful for the switching element in phased array radar appli-
cations. The larger bond pad allows for two (2) 1 mil dia contact
wires which reduces the bond wire inductance almost in half.
Absolute Maximum
-60°C to +150°C
-65°C to +175°C
100mA
70 V
+40 dBm (CW)
+320°C for 10 seconds
1. Exceeding these limits may cause permanent damage.
Electrical Specifications @ +25°C
Parameters
Total Capacitance
1
Series Resistance
2
Parallel Resistance
Breakdown Voltage
2
Carrier Lifetime
2
Thermal Impedance
Symbol
C
T
Rs
Rp
Vb
T
L
θjc
Units
pF
Ω
KΩ
Volts
nS
°C/W
Test Conditions
-5 Volts at 1 MHz
+10 mA at 1 GHz
0 Volts at 1 GHz
-10 uA
+10mA/-6mA
1A/.01A, 10 mS
MA4BPS101
Min. Typ. Max.
0.13
0.17
1.9
2.4
14
70
110
300
38
MA4BPS201
Min. Typ. Max.
0.20
0.25
1.0
1.3
6
70
110
300
28
MA4BPS301
Min. Typ. Max.
0.30
0.35
0.9
1.2
6
70
110
300
24
1. Guaranteed by correlation to 2 MHz on-wafer measurements.
2. Tested on a sample basis only.
V2.01
M/A-COM Division of AMP Incorporated
Q
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Q
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
Hanlding and Mounting Information
Handling
All semiconductor dice should be handled with care to avoid
damage or contamination. For an individual die, the use of
plastic tipped tweezers or vacuum pick-up tool is recommended.
When using automatic pick and place, abrasion and mechanical
shock should be minimized.
Mounting
The dice have Ti-Pt-Au back metal, with a final gold thickness
of 0.1 micron. They can be die mounted with a gold-tin eutectic
solder preform or conductive epoxy. The mounting surface
must be clean and flat.
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with
a work surface temperature of 255
°
C and a tool tip temperature
of 265
°
C. When hot gas is applied, the tool tip temperature
should be 290
°
C. The chip should not be exposed to tempera-
tures greater than 320
°
C for more than 20 seconds. No more
than three seconds should be required for attachment.
Epoxy Die Attachment
A minimum amount of epoxy should be used. A thin epoxy
fillet should be visible around the perimeter of the chip after
placement. Cure epoxy per manufacturer’s schedule.
Wire Bonding
The two bond pads on these die have a Ti-Pt-Au metalization
scheme, with a final gold thickness of 2.5 microns. The pads are
75 x 150 microns; up to two wires or a 100 micron wide ribbon
can be bonded to each pad. Thermosonic wedge wire bonding of
0.001” diameter gold wire is recommended with a stage temper-
ature of 150
°
C and a force of 25 to 40 grams. Ultrasonic energy
should be adjusted to the minimum required.
Chip Outline Drawing (ODS-1244)
INCHES
DIM
A
B
C
D
E
F
G
H
Notes:
MIN
MAX
0.019
0.0213
0.019
0.0213
0.0055
0.0063
0.0026
0.0033
0.0094
0.0102
0.007 Ref.
0.002 Ref.
0.0043
0.0055
MILLIMETERS
MIN
MAX
0.480
0.540
0.480
0.540
0.140
0.160
0.065
0.085
0.240
0.260
0.180 Ref.
0.050 Ref.
0.110
0.140
1. Bond pad material: 2.5 micron thick gold.
2. Shaded areas indicate wire bonding pads
3. Backside metal: 0.1 micron thick gold.
Typical Resistance Curves
Series Resistance vs. Forward Current at 1 GHz
100.0
Series Resistance (Ohms)
Parallel Resistance vs. Reverse Voltage at 1 GHz
100,000
Parallel Resistance (Ohms)
MA4BPS101
10.0
10,000
MA4BPS101
MA4BPS201
MA4BPS301
1.0
MA4BPS201
MA4BPS301
0.1
0.0
0.1
1.0
F o r w a r d C u r r e n t ( mA )
10.0
100.0
1,000
0.0
2.0
4.0
6.0
8.0
10.0
Rever se Vol t age ( Vol t s)
V2.01
M/A-COM Division of AMP Incorporated
Q
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Q
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
Equivalent Circuits
Devices Typical Forward Bias Equivalent Circuit
Ls
Ls
Rs
10mA @
1 GHz
Ohms
1.9
1.0
0.9
Cp
Ls
Lv
Cp
Rs
Cp
Conditions
Units
MA4BPS101
MA4BPS201
MA4BPS301
Lv
pF
0.03
0.03
0.03
nH
0.05
0.05
0.05
nH
0.08
0.05
0.04
Devices Typical Forward Bias Equivalent Circuit
Ls
Ls
Conditions
Cj
-5V @
1 MHz
pF
0.07
0.14
0.24
Rp
0V @
1 GHz
KW
14
6
6
Cp
-
pF
0.03
0.03
0.03
Ls
Lv
Cp
Cj
Rp
Cp
Units
MA4BPS101
MA4BPS201
MA4BPS301
Lv
nH
0.05
0.05
0.05
nH
0.08
0.05
0.04
Note: Since the spice models for PIN and PN Junctions do not accurately predict the effects of stored charge, M/A-COM does not provide Spice
Parameters for PIN diodes. On wafer S-Parameter Data are available.
V2.01
M/A-COM Division of AMP Incorporated
Q
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Q
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
V2.01
M/A-COM Division of AMP Incorporated
Q
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Q
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
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