Schottky Barrier Diodes (SBD)
MA4S713
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
I
Features
•
Small S-mini type 4-pin package
•
Two isolated elements contained in one package, allowing high-
density mounting
•
Flat lead type package, resulting in promotion of the actual mounting
ratio and solderability with a high-speed mounter
•
Optimum for low-voltage rectification because of its low forward rise
voltage (V
F
)
•
Optimum for high-frequency rectification because of its short reverse
recovery time (t
rr
)
2.0
±
0.1
1.3
±
0.1
Unit : mm
2.1
±
0.1
1.25
±
0.1
1
4
2
3
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak forward current
Peak forward
current
Forward current
(DC)
Single
Double
*
Single
Double
*
T
j
T
stg
I
F
Symbol
V
R
V
RM
I
FM
Rating
30
30
150
110
30
20
125
−55
to
+125
°C
°C
2
mA
1
Unit
V
V
mA
0.7
±
0.1
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
Marking Symbol: M1N
Internal Connection
4
3
Junction temperature
Storage temperature
Note) * : Value per chip
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Conditions
Min
Typ
Max
1
0.4
1
0.3
±
0.05
Unit
µA
V
V
pF
ns
1.5
1
Detection efficiency
65
%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
1 mA
I
F
= 10 mA
I
R
=
10 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
微控制器 MCU
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