Switching Diodes
MA4X160A
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65
±
0.15
2.8
−
0.3
1.5
+
0.25
−
0.05
+
0.2
0.65
±
0.15
0.5 R
0.4
±
0.2
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Reverse voltage
(DC)
Repetitive peak
forward current
Non-repetitive peak
forward surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
Single
Double
Single
Double
Single
Double
Symbol
V
R
V
RRM
I
F(AV)
I
F(AV)
I
FRM
I
FRM
I
FSM
I
FSM
T
j
T
stg
Rating
80
80
100
75
225
170
500
375
150
−55
to
+150
Unit
V
V
mA
mA/Unit
mA
mA/Unit
mA
mA/Unit
°C
°C
4
3
1
2
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M1E
Internal Connection
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
V
R
C
t
t
rr
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA, V
R
= 6 V
I
rr
= 0.1 · I
R
, R
L
= 100
Ω
80
0.9
2
3
0.95
Conditions
Min
Typ
Max
0.1
1.2
Unit
µA
V
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0 to 0.1
I
Absolute Maximum Ratings
T
a
= 25°C
1.1
0.1 to 0.3
0.8
0.16
−
0.06
•
Two isolated elements contained in one package, allowing high-
density mounting
•
Centrosymmetrical wiring, allowing to free from the taping
direction
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
1.9
±
0.2
0.95
4
1
2.9
−
0.05
+
0.2
0.95
0.5
+
0.1
3
0.4
−
0.05
2
0.2
+
0.2
−
0.1
+
0.1
0.6
−
0
+
0.1
0.4
−
0.05
1.45
+
0.1
I
Features
1
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