Schottky Barrier Diodes (SBD)
MA4ZD14
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
I
Features
•
S-mini type 4-pin package
•
Low forward rise voltage V
F
(V
F
<
0.4 V)
•
Allowing high-density mounting
2.0
±
0.1
1.3
±
0.1
1
2.1
±
0.1
1.25
±
0.1
4
2
3
Repetitive peak reverse voltage
Forward current
(DC)
Peak forward
current
Non-repetitive peak
forward surge current
*
2
V
RRM
I
F
I
FM
20
100
75
300
225
V
mA
Single
Double
*1
Single
Double
Single
Double
*1
*1
mA
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
S-Mini Type Package (4-pin)
I
FSM
T
j
T
stg
1
0.75
125
−55
to
+125
A
Marking Symbol: M5D
°C
°C
Junction temperature
Storage temperature
Internal Connection
1
2
4
3
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
V
R
= 10 V
I
F
= 5 mA
I
F
= 100 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
25
3
Conditions
Min
Typ
Max
20
0.27
0.40
Unit
µA
V
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.7
±
0.1
Reverse voltage (DC)
V
R
20
V
0.11
±
0.01
Parameter
Symbol
Rating
Unit
0.3
±
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
1
PCB设计
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