PWR-82331 AND PWR-82333
SMART POWER 3-PHASE MOTOR DRIVES
DESCRIPTION
The PWR-82331 and PWR-82333 are
30 A, 3-phase motor drive hybrids. The
PWR-82331 has a +200 V rating and
uses MOSFETs in the output stage
while the PWR-82333 has a +500 V rat-
ing and an IGBT output stage. Both
types have individual fast recovery
diodes internally connected across the
output drive transistors to clamp induc-
tive flyback.
This new series of Smart Power Motor
Drives has CMOS Schmitt Trigger inputs
for high noise immunity. High- and low-
side input logic signals are XOR’d in
each phase to prevent simultaneous
turn-on of in-line transistors, thus elimi-
nating a shoot thru condition. The inter-
nal logic controls the high- and low-side
gate drives for each phase and can
operate from +5 to +15 V logic levels.
The internal power supply provides a
constant voltage source to the floating
high-side gate drives. This provides con-
stant output performance for switching
frequencies from dc to 50 kHz.
APPLICATIONS
Packaged in small cases, these hybrids
are an excellent choice for high-perfor-
mance, high-reliability motor drives for
Military and Aerospace servo-amps and
speed controls. Among the many appli-
cations are robotics; electro-mechanical
valve assemblies; actuator systems for
flight control surfaces on military and
commercial aircraft; antenna and radar
positioning; fan and blower motors for
environmental conditioning; thrust and
vector position control of mini-subs,
drones, and RPV’s; compressor motors
for cryogenic coolers; and high power
inverters.
The PWR-82331/82333 hybrids are
ideal for harsh military environments
where shock, vibration, and temperature
extremes are evident, such as missile
applications where fin actuator systems
control missile direction.
The PWR-82331/82333 operates over
the -55°C to +125°C temperature range
and is available with military processing.
FEATURES
•
Small Size (3.0" x 2.1" x 0.39")
•
200 V and 500 V Capability
•
30 A Current Capability
•
High-Efficiency MOSFET or IGBT
Drive Stage
•
Direct Drive from Commutation
Logic
•
Six Step Trapezoidal or
Sinusoidal Drive
•
Four Quadrant Operation
•
0.85° C/W
θ
j-c Max
•
Military Processing Available
DIGITAL
CONTROL
AND
PROTECTION
CIRCUITRY
NOTE: Pins 3, 7, and 11 are internally connected; Pins 19, 22, and 26 are internally connected.
FIGURE 1. PWR-82331/82333 BLOCK DIAGRAM
©
1991 ILC Data Device Corporation
TABLE 1. ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C Unless Otherwise Specified)
PARAMETER
SUPPLY VOLTAGE
BIAS VOLTAGE
LOGIC POWER-IN VOLTAGE
INPUT LOGIC VOLTAGE
OUTPUT CURRENT
CONTINUOUS
PULSED
OPERATING FREQUENCY
CASE OPERATING TEMPERATURE
CASE STORAGE TEMPERATURE RANGE
GND - VSS DIFFERENTIAL VOLTAGE
SYMBOL
V
CC
V
b
V
LPI
V
U
, V
L
, V
Sd
I
O
I
OP
fo
T
C
T
CS
PWR-82331
200
50
18
V
LPI
+0.5
30
50
50
-55 to +125
-55 to +150
±3
TABLE 2. PWR-82331 and PWR-82333 SPECIFICATIONS
(T
C
= +25°C Unless Otherwise Specified)
PWR-82331
TEST
SYMBOL
CONDITIONS
MIN
TYP MAX
I
O
V
CC
R
ON
V
CE(SAT)
V
F
t
rr
I
r
I
r
V
b
I
bq
I
b
Ii
r
I
LPI
V
P
V
N
V
P
V
N
30
140
0.1
1.15
50
10
1
14
V
b
= 28 V
V
b
=28 V,see note 5
Vb = 28 V
see note 6
Pin Connections
Pin 15&16 connect.
Pin 15&16 connect.
see note 6
see note 6
Test 1 Conditions
Pin 15&16 connect.
+15 V Logic
Io=30 A peak
PWR-82331,
V
CC
= 140 V
PWR-82333,
V
CC
= 270 V
32
35
65
1.4
2
10
7
3
2
35
50
14
32
65
1.4
2
10
7
3
2
PWR-82333
500
50
18
V
LPI
+0.5
30
50
25
-55 to +125
-55 to +150
±3
UNITS
V
V
V
V
A
A
kHz
°C
°C
Vdc-peak
PARAMETER
PWR-82333
MIN
TYP MAX
30
350
3.8
1.70
50
10
1
50
UNITS
OUTPUT
Output Current Continuous (see FIG.’s 15 & 19)
Supply Voltage
Output On-Resistance (each FET)(see FIG. 14A)
Output Voltage drop (each IGBT) (see FIG. 14B)
Instant Forward Voltage (flyback diode) (see FIG.’s 13A/B)
Reverse Recovery Time (flyback diode)
Reverse Leakage Current at T
C
= +25°C
Reverse Leakage Current at T
C
= +125°C
BIAS SUPPLY
Input Bias Voltage (T
C
= -55°C to +125°C)
Quiescent Bias Current (see note 4)(see FIG. 16)
Bias Current (T
C
= -55°C to +125°C)(see FIG.’s 17 & 18)
In-rush Current (T
C
= -55°C to +125°C)
Logic power Input Current
INPUT SIGNALS
(see FIG. 7)
Positive Trigger Threshold Voltage
Negative Trigger Threshold Voltage
Positive Trigger Threshold Voltage
Negative Trigger Threshold Voltage
SWITCHING CHARACTERISTICS
(see FIG. 2)
Upper Drive:
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Turn-on Rise Time
Turn-off Fall Time
Lower Drive:
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Turn-on Rise Time
Turn-off Fall Time
SWITCHING CHARACTERISTICS
(see FIG. 2)
Upper Drive:
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Turn-on Rise Time
Turn-off Fall Time
see note 1
Io=30 A
Io=30 A
Iop=30 A,see note 2
I
f
=1 A, Ir=1 A
see note 3
see note 3
28
270
A
V
ohm
V
V
nsec
µA
mA
V
mA
mA
A
mA
V
V
V
V
6.8
4.0
2.2
0.9
6.8
4.0
2.2
0.9
td(on)
td(off)
t
Sd
tr
tf
840
1020
800
125
125
810
860
810
100
150
nsec
nsec
nsec
nsec
nsec
td(on)
td(off)
t
Sd
tr
tf
850
1000
800
125
125
800
870
770
100
150
nsec
nsec
nsec
nsec
nsec
td(on)
td(off)
t
Sd
tr
tf
Test 2 Conditions
see Note 6
+5 V, Io=30 A peak
PWR-82331,
Vcc = 140 V
PWR-82333,
Vcc = 270 V
1090
1315
1100
125
125
1050
1150
850
100
150
nsec
nsec
nsec
nsec
nsec
2
PARAMETER
TABLE 2. PWR-82331 and PWR-82332 SPECIFICATIONS (cont'd)
(T
C
= +25°C Unless Otherwise Specified)
PWR-82331
TEST
SYMBOL
CONDITIONS
MIN
TYP
MAX
Test 2
Conditions
see Note 6
+5 V, Io=30 A peak
PWR-82331,
Vcc=140 V
PWR-82333, 270 V
400
150
0.85
250
150
125
150
4.9
(140)
PWR-82333
MIN
TYP
MAX
UNIT
SWITCHING CHARACTERISTICS (Cont’d)
Lower Drive:
Turn-on Propagation delay
Turn-off Propagation delay
Shut-down propagation delay (see FIG. 10)
Turn-on Rise Time
Turn-off Fall Time
DEAD TIME
MINIMUM PULSE WIDTH
THERMAL
Maximum Thermal Resistance
Maximum Lead Soldering Temperature (Note 7)
Junction Temperature Range
Case Operating Temperature
Case Storage Temperature
WEIGHT
td(on)
td(off)
tsd
tr
tf
tdt
tpw
θjc
Ts
Tj
Tco
Tcs
1125
1290
1100
125
125
500
150
1050
1150
850
100
150
nsec
nsec
nsec
nsec
nsec
nsec
nsec
each transistor
-55
-55
-55
-55
-55
-55
0.85
250
150
125
150
4.9
(140)
°C/W
°C
°C
°C
°C
oz
(g)
Notes:
1. For Hi-Rel applications, derating per MIL-S-19500 should be observed. (Derate Vcc to 70%.)
2. Pulse width
≤
300
µs,
duty cycle
≤
2%.
3. For PWR-82331, Vcc = 140 V, V
U,
V
L
= Logic ‘0’ and for PWR-82333, Vcc = 350 V, V
U,
V
L
= Logic ‘0.’
4. V
U,
V
L
= Logic ‘0’ on pins 17,18,20,21,24 and 25.
5. For PWR-82331, fo = 30 kHz and for PWR-82333, fo = 10 kHz.
6. Pin 16 connected to external +5 V supply.
7. Solder 1/8” from case for 5 seconds maximum.
INTRODUCTION
The 3-phase PWR-82331 and PWR-82333 are 30 A motor drive
hybrids rated at +200 V and +500 V respectively. The PWR-
82331 uses a MOSFET output stage and the PWR-82333 has
an IGBT output stage for high speed, high current, and high effi-
ciency operation. The PWR-82333 also offers high-voltage per-
formance of an IGBT for use in +270 V systems. These motor
drives are ideal for use in high-performance motion control sys-
tems, servo amplifiers, and motor speed control designs.
Furthermore, Multi-axis systems requiring multiple drive stages
can benefit from the small size of these power drives.
The PWR-82331/333 can be driven directly from the commuta-
tion logic, DSP, or a custom ASIC that supplies digital signals to
control the upper and lower transistors of each phase. These
highly integrated drive stages have Schmitt trigger digital inputs
that control the high and low side of each phase. Digital protec-
tion of each phase eliminates an in-line firing condition, by pre-
venting simultaneous turn-on of both the upper and lower tran-
sistors. The logic controls the high- and low-side gate drivers.
Operation from +5 to +15 V logic levels can be programmed by
applying the appropriate voltage to pin 16 (VLPI). The PWR-
82331/333 has a ground referenced low-side gate drive. An
internal dc-dc converter supplies a floating output to each side of
the three high-side drives. This provides a continuous high-side
gate drive even during the motor stall. Pin 15 (VLPO) supplies a
+15 V output, which can be used to power the internal logic when
system usage requires +15 V logic. The high- and low-side gate
drivers control the N-channel MOSFET or IGBT output stage.
The MOSFETs used in the PWR-82331 allow output switching
up to 50 kHz, while the high-speed IGBTs in the PWR-82333 can
switch at 25 kHz. A flyback diode parallels each output transis-
tor and controls the regenerative energy produced by the motor.
These fast recovery diodes have faster reverse switching times
than the intrinsic body diode of the MOSFETs used in the PWR-
82331. They also protect the IGBTs used in the PWR-82333
from exceeding their emitter-to-collector breakdown voltage.
Use of a copper case and solder attachment of the output tran-
sistors achieves a low thermal resistance of 0.85° C/W maxi-
mum. Care should be taken to adequately heatsink these motor
drives to maintain a case temperature of 125°C. Junction tem-
peratures should not exceed 150°C. The PWR-82331/333 do
not have internal short-circuit or overcurrent protection. For pro-
tection of the output transistors, these features must be added
external to the hybrid.
3
10%
(REFERENCE TABLE 2. ALSO.)
FIGURE 2. INPUT/OUTPUT TIMING RELATIONSHIPS
BIAS VOLTAGES
The PWR-82331/333 motor drive hybrids require only a single
power supply for operation. The hybrid generates three inde-
pendent, floating supplies, which eliminates the need for external
bias voltages for each phase.
In order for the internal power supply to generate these voltages,
the input bias voltage (V
b
) must be from +15 to +50 Vdc. In most
avionic systems this can be accomplished by connecting the V
b
pin to the MIL-STD-704D, +28 Volt bus. See FIGURE 3A.
If the system bus voltage is greater than +50 Vdc (and a lower
voltage is not available), then the V
b
pin and V
z
pin can be tied
together with an external power resistor (R
b
) and connected
from these pins to the system power bus. (See FIGURE 3B).
See FIGUREs 4 and 5 for bias resistor characteristics.
If additional power dissipation in R
b
is a concern, FIGURE 3C
shows a more efficient design, using a low-power resistor (R
T
)
and an additional transistor. To determine the proper resistor to
use, refer to FIGURE 6.
If there is another voltage available in the system in the +15 to
+50 Vdc range, then this voltage can be directly connected to the
V
b
pin of the hybrid.
In any case, a 0.01
µ
F decoupling capacitor (C
b
) must be
connected between V
b
(pin 12) and GND.
≤
CC
≤
FIGURE 3. CONNECTION TO BUS VOLTAGE TO DEVELOP PROPER INPUT BIAS VOLTAGE
50
CC
FIGURE 4A. PWR-82331
FIGURE 4B. PWR-82333
FIGURE 4. BIAS RESISTOR VALUE (Rb) VS. BUS VOLTAGE (VCC)
4
Bus Voltage, V
(Volts)
FIGURE 5A. PWR-82331
FIGURE 5B. PWR-82333
FIGURE 5. POWER DISSIPATED IN BIAS RESISTOR (Rb) VS. BUS VOLTAGE (VCC)
FIGURE 6. RT RESISTOR VALUE VS. BUS VOLTAGE
5
stm32/stm8
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