Fast Recovery Diodes (FRD)
MA111
MA649
Silicon planer type (cathode common)
0.7±0.1
For switching
s
Features
q
q
Unit : mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Low forward voltage V
F
Fast reverse recovery time t
rr
16.7±0.3
q
High reverse voltage V
R
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1
1.3±0.2
0.5
-0.1
0.8±0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s
Absolute Maximum Ratings
(Ta= 25˚C)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
* Sine half wave : 10ms/cycle
5.08±0.5
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
*
T
j
T
stg
Rating
200
200
5
30
– 40 to +150
– 40 to +150
Unit
V
V
A
A
˚C
˚C
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
1
2
3
s
Internal Connection
1
2
3
s
Electrical Characteristics
(Ta= 25˚C)
Parameter
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time
Thermal resistance
Symbol
I
RRM1
I
RRM2
V
F
t
rr
*
R
th(j-c)
*
R
th(j-a)
Condition
V
RRM
= 200V, T
C
= 25˚C
V
RRM
= 200V, T
j
=150˚C
I
F
= 2.5A, T
C
= 25˚C
I
F
=1A, I
R
=1A
Flat direct current between junction and case
min
typ
max
100
6
1
100
3
63
Unit
µA
mA
V
ns
˚C/W
˚C/W
Note 1. Rated input/output frequency : 10MHz
2. * t
rr
measuring circuit
50Ω
D.U.T
50Ω
I
F
I
R
5.5Ω
t
rr
0.1
×
I
R
Fast Recovery Diodes (FRD)
MA649
I
F
– V
F
100
T
C
=25˚C
10
7
I
R
– V
R
12
P
D(AV)
– I
F(AV)
Ta=150˚C
I
R
(nA)
(A)
10
10
5
100˚C
Average forward current P
D(AV)
(W)
10
6
10
t
0
t
1
8
t
0
/t
1
=1/6
6
Forward current
I
F
1
Ta=150˚C
25˚C
Reverse current
10
4
100˚C
0.1
10
3
1/3
1/2
DC
25˚C
4
10
2
2
0.01
0
0.4
0.8
1.2
V
F
1.6
(V)
2.0
Forward voltage
10
0
50
100
150
200
250
300
Reverse voltage
V
R
(V)
0
0
1
2
3
4
5
6
Average forward current I
F(AV)
(A)
I
F(AV)
– T
C
6
t
0
/t
1
=1/2
R
th(t)
– t
10
2
Without heat sink
(A)
5
Thermal resistance R
th
(˚C/W)
1/3
1/6
4
DC
Average forward current
I
F(AV)
10
3
1
2
10
–1
1
t
0
t
1
0
30
50
100
T
C
(˚C)
150
10
–2
10
–4
10
–3
10
–2
10
–1
Time
1
t
(s)
10
10
2
10
3
10
4
Case temperature
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
