Low Noise Amplifier
1.7 - 2.0 GHz
Features
q
q
q
q
q
q
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MAAM12032
SO-8
PIN 8
.1497-.1574
(3.80-4.00)
-B-
.2284-.2440
(5.80-6.20)
.010(0.25) M B M
Low Noise Figure: 1.80 dB
High Gain: 13 dB
Low Power Consumption: 3 to 5 V, 5 mA
High Dynamic Range
DC Decoupled RF Input and Output
No External RF Tuning Elements Necessary
Low Cost SOIC 8 Plastic Package
Orientation
mark
PIN 1
.1890-.1968
(4.80-5.00)
-A-
.0532-.0688
(1.35-1.75)
0¡-8¡
-C-
.0040-.0098
(0.10-0.25)
.013-.020 TYP.
(0.33-0.51)
.0099-0.0196
x 45¡ Chamfer
(0.25-0.50)
Description
M/A-COM’s MAAM12032 is a high performance GaAs
MMIC low noise amplifier in a low cost SOIC 8-lead
surface mount plastic package. The MAAM12032
employs a fully monolithic design which eliminates the
need for external tuning networks. It can be biased
using 3- or 5-volt supplies and has an option for biasing
at higher currents for increased dynamic range.
The MAAM12032 is ideally suited for use where low
noise figure, high gain, high dynamic range and low
power consumption are required. Typical applications
include receiver front ends in the Japanese Personal
Handy Phone Service (PHS), Private Branch Exchange
(PBX) and Personal Communications Systems and
Networks (PCS, PCN) markets, as well as standard gain
blocks, buffer amps, driver amps and IF amps in both
fixed and portable systems.
M/A-COM’s MAAM12032 is fabricated using a mature
0.5-micron gate length GaAs process. The process
features full passivation for increased performance
reliability.
.004 (0.10)
.016-.050
(0.40-1.27)
.0075-0.0098
(0.19-0.25)
.050(1.27) BSC.
.010(0.25) M C A M B S
8- Lead SOP outline dimensions
Narrow body .150
(All dimensions per JEDEC No. MS-012-AA, Issue C)
Dimensions in ( ) are in mm.
Unless Otherwise Noted: .xxx = – 0.010 (.xx = – 0.25)
.xx = – 0.02 (.x = –0.5)
Ordering Information
Part Number
MAAM12032
MAAM12032TR
MAAM12032RTR
MAAM12032SMB
Package
SOIC 8-Lead Plastic
Forward Tape and Reel*
Reverse Tape and Reel*
Designer’s Kit
* If specific reel size is required, consult factory for part
number assignment.
Electrical Specifications
1
,
T
A
= +25°C, Z
0
= 50Ω, V
DD
= +5 V, P
IN
= -30 dBm, f = 1.7 - 2.0 GHz
Parameter
Gain
Noise Figure
Input VSWR
Output VSWR
Output 1 dB Compression
Input IP3
Reverse Isolation
Bias Current
1. See following pages for 3-volt data.
Specifications Subject to Change Without Notice.
V2.00
s
Units
dB
dB
Min.
10
Typ.
13
1.8
1.5:1
1.5:1
Max.
16
2.1
dBm
dBm
dB
mA
3
2
0
30
5
7
M/A-COM, Inc.
s
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
Telephone: 800-366-2266
Low Noise Amplifier
MAAM12032
Absolute Maximum Ratings
1
Parameter
V
DD
Input Power
Current
2
Channel Temperature
3
Operating Temperature
Storage Temperature
Absolute Maximum
+10 VDC
+17 dBm
30 mA
+150°C
-40°C to +85°C
-65°C to +150°C
Functional Diagram
500pF
15 nH
V
DD
RF
OUT
GND
8
7
6
5
GND
1. Operation of this device outside these limits may cause
permanent damage.
2. Only if pin #2 is used to increase current. (See note 6.)
3. Typical thermal resistance ( jc) = +165°C/W.
GND
1
2
3
4
GND
Recommended PCB Configuration
0.020 (0.51) FR-4 Circuit Board
Dimensions in inches (mm)
RF
IN
See Note 6
V
DD
See
Note 5
See
Note 6
.025
(.64)
1
2
.294 (7.47)
0.100
(2.54)
8
7
6
RF Out
5
Notes:
4. Pins 1, 4, 5 and 8 must be RF and DC grounded as shown.
5. Pin 3 is the RF input; pin 6 is the RF output. V
DD
is applied on pin 7.
This pin must be bypassed with a 500-pF surface mount MLC
capacitor, mounted as close as possible to pin 7, and RF decoupled
with a chip inductor having a minimum value of 15 nH (as shown in
the Recommended PCB Configuration).
6. Pin 2 allows use of an external resistor to ground for optional, higher
current bias. For nominal current operation no resistor is used.
For optional 20-mA current operation, connect a 30- to 35-ohm chip
resistor (as shown in the Recommended PCB Configuration).
RF In
0.037
(0.94)
3
4
0.125 0.245
(3.18) (6.22)
R .008
(0.20)
(12 Places)
Plated thru hole
R .025 (0.64)
(2 Places)
Plated thru hole
Typical Performance
GAIN vs FREQUENCY, T
A
= +25°C
17
15
NOISE FIGURE vs FREQUENCY, T
A
= +25°C
2.0
NOISE FIGURE (dB)
5 V, 20 mA
5 V, 5 mA
3 V, 5 mA
1.9
1.8
1.7
1.6
5 V, 5 mA
5 V, 20 mA
GAIN (dB)
13
11
9
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
3 V, 5 mA
1.70
1.75
1.80
1.85
1.90
1.95
2.00
FREQUENCY (GHz)
FREQUENCY (GHz)
Specifications Subject to Change Without Notice.
V2.00
s
M/A-COM, Inc.
s
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
Telephone: 800-366-2266
Low Noise Amplifier
MAAM12032
VSWR
VS
FREQUENCY @ 5 V, 5 mA, T
A
= +25°C
3.0
6
INPUT IP3 vs FREQUENCY, T
A
= +25°C
5 V, 20mA
5 V, 5 mA
2
0
-2
-4
3 V, 5 mA
1.70
1.75
1.80
1.85
1.90
1.95
2.00
INPUT IP3 (dBm)
2.2
2.5
4
Input
Output
VSWR
2.0
1.5
1.0
1.5
1.6
1.7
1.8
1.9
2.0
2.1
FREQUENCY (GHz)
FREQUENCY (GHz)
GAIN vs FREQUENCY @ 5 V, 5 mA
17
15
13
11
9
1.5
+85°C
NOISE FIGURE vs FREQUENCY @ 5 V, 5 mA
2.5
NOISE FIGURE (dB)
-40°C
+25°C
GAIN (dB)
2.2
1.9
+25°C
+85°C
-40°C
1.6
1.3
1.6
1.7
1.8
1.9
2.0
2.1
2.2
1.70
1.75
1.80
1.85
1.90
1.95
2.00
FREQUENCY (GHz)
FREQUENCY (GHz)
Additional information is available in Application Note M540,
“M/A-COM GaAs MMIC LNA SOIC-8 Platform.”
Specifications Subject to Change Without Notice.
V2.00
s
M/A-COM, Inc.
s
1011 Pawtucket Boulevard, Lowell, MA 01853 USA
Telephone: 800-366-2266
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