RO-P-DS-3070
0.5W X/Ku-Band Power Amplifier
8.0-12.0 GHz
MAAPGM0034
Preliminary Information
Features
♦
♦
♦
♦
♦
8.0-12.0 GHz GaAs MMIC Amplifier
8.0-12.0 GHz Operation
0.5 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
High Performance Ceramic Bolt Down Package
APGM0034
YWWLLLL
Primary Applications
♦
Point-to-Point Radio
♦
Weather Radar
♦
Airborne Radar
Description
The
MAAPGM0034
is a packaged, 2-stage, 0.5 W power
amplifier with on-chip bias networks in a bolt down ceramic
package, allowing easy assembly. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Each device is 100% RF tested to ensure performance
compliance. The part is fabricated using M/A-COM’s GaAs
Multifunction Self-Aligned Gate (MSAG
®
) MESFET
Process.
Pin Number
1
2
3
4
5
6
7
8
9
10
Description
No Connection
No Connection
RF IN
No Connection
V
GG
No Connection
No Connection
RF OUT
No Connection
V
DD
Maximum Operating Conditions
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
1
Absolute Maximum
21.0
+12.0
-3.0
150
1.5
180
-55 to +150
Units
dBm
V
V
mA
W
°C
°C
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
1. Operation outside of these ranges may reduce product reliability.
RO-P-DS-3070
2/6
0.5W X/Ku-Band Power Amplifier
Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Gate Supply Voltage
Input Power
Junction Temperature
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
T
J
T
JC
T
B
58.6
Min
4.0
-2.3
Typ
8.0
-2.0
16.0
MAAPGM0034
Max
10.0
-1.5
19.0
150
Unit
V
V
dBm
°C
°C/W
Note 2
°C
2. Maximum MMIC Base Temperature = 150°C — T
JC
* V
DD
* I
DQ
Electrical Characteristics: T
B
= 40°C
3
, Z
0
= 50
Ω,
V
DD
= 10V, V
GG
= -1.8V, P
in
= 16 dBm, R
G
= 604O
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Input VSWR
Output VSWR
Gate Supply Current
Drain Supply Current
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
Output Third Order Intercept
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 17 dBm
5
th
Order Intermodulation Distortion,
Single Carrier Level = 17 dBm
3. T
B
= MMIC Base Temperature
Symbol
f
POUT
PAE
P1dB
G
VSWR
VSWR
I
GG
I
DD
NF
2f
3f
OTOI
IM3
IM5
Typical
8.0-12.0
27.5
30
27
14.5
2.5:1
2.5:1
<2
< 200
8.5
-28
-35
33
-13
-36
mA
mA
dB
dBc
dBc
dBm
dBm
dBm
Units
GHz
dBm
%
dBm
dB
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device,
follow these steps.
1. Apply V
GG
= -1.8 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust
V
GG
to set I
DQ
, (approxmately @ –1.8V).
4. Set RF input.
5.
Power down sequence in reverse. Turn V
GG
off last.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3070
3/6
0.5W X/Ku-Band Power Amplifier
MAAPGM0034
50
POUT
PAE
50
40
40
POUT (dBm)
20
20
10
10
0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
Frequency (GHz)
0
12.5
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at V
DD
= 10V and Pin = 16 dBm.
50
POUT
PAE
40
50
40
POUT (dBm)
30
30
PAE(%)
20
20
10
10
0
4
5
6
7
Drain Voltage (V)
8
9
10
0
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 10 GHz.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00
Visit www.macom.com for additional data sheets and product information.
PAE(%)
30
30
RO-P-DS-3070
4/6
0.5W X/Ku-Band Power Amplifier
MAAPGM0034
40
35
30
P1dB (dBm)
25
20
15
10
5
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
VDD = 4
VDD = 8
VDD = 6
VDD = 10
25
Gain
Input VSWR
Output VSWR
Gain (dB)
15
6
20
5
4
VSWR
10
3
5
2
0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 10V.
1
12.5
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3070
5/6
0.5W X/Ku-Band Power Amplifier
MAAPGM0034
APGM0034
Figure 5. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired
ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of
electrolytic gold over nickel plate.
Specifications subject to change without notice.
Email: macom_adbu_ics@tycoelectronics.com
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
V 1.00
Visit www.macom.com for additional data sheets and product information.
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