MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC15FP Series) or Four Modes
(MAC15AFP Series)
MAC15FP
Series
MAC15AFP
Series
ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC15-4FP, MAC15A4FP
MAC15-6FP, MAC15A6FP
MAC15-8FP, MAC15A8FP
MAC15-10FP, MAC15A10FP
On-State RMS Current (TC = +80°C)(2)
Full Cycle Sine Wave 50 to 60 Hz (TC = +95°C)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C)
preceded and followed by rated current
Peak Gate Power (TC = +80°C, Pulse Width = 2
µs)
Average Gate Power (TC = +80°C, t = 8.3 ms)
Peak Gate Current
Peak Gate Voltage
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
Symbol
VDRM
200
400
600
800
IT(RMS)
ITSM
PGM
PG(AV)
IGM
15
12
150
20
0.5
2
10
1500
–40 to +125
–40 to +150
Amps
Amps
Watts
Watt
Amps
Volts
Volts
°C
°C
Value
Unit
Volts
p
20%)
VGM
V(ISO)
TJ
Tstg
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
3–63
MAC15FP Series MAC15AFP Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
2
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current (Either Direction) TJ = 25°C
(VD = Rated VDRM, TJ = 125°C, Gate Open)
Peak On-State Voltage (Either Direction)
(ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
µs,
Pulse Width = 2
µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
MT2(+), G(–)
QUADRANT I
MT2(+), G(+)
Symbol
IDRM
Min
—
—
—
Typ
—
—
1.3
Max
10
2
1.6
Unit
µA
mA
Volts
mA
—
—
—
—
VGT
—
—
—
—
0.2
0.2
IH
—
0.9
0.9
1.1
1.4
—
—
6
2
2
2
2.5
—
—
40
mA
—
—
—
—
50
50
50
75
Volts
p
2%)
VTM
IGT
tgt
—
1.5
—
µs
dv/dt(c)
—
5
—
V/µs
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
G(+)
Usage
Part Number
VS
MBS4991
6–10 V
350
µA
Max
0.5 V Max
General
MBS4992
7.5–9 V
120
µA
Max
0.2 V Max
G(–)
QUADRANT III
MT2(–), G(–)
QUADRANT IV
MT2(–), G(+)
IS
VS1–VS2
MT2(–)
Temperature
Coefficient
0.02%/°C Typ
1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3–64
Motorola Thyristor Device Data
MAC15FP Series MAC15AFP Series
TYPICAL CHARACTERISTICS
130
30°
120
60°
90°
110
125°C
100
150° to 180°
α
90
80
0
α
α
= CONDUCTION ANGLE
2
6
8
10
12
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
14
16
dc
IGTM, GATE TRIGGER CURRENT (NORMALIZED)
,
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
TC , CASE TEMPERATURE (
°
C)
1
0.7
0.5
0.3
–60
–40
–20
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (°C)
100
120
140
Figure 1. RMS Current Derating
PD(AV) , AVERAGE POWER DISSIPATION (WATTS)
20
16
100
120°
dc
90°
60°
30
30°
20
70
50
Figure 4. Typical Gate Trigger Current
α
= 180°
TJ = 125°C
α
α
TJ = 25°C
125°C
12
8
α
= CONDUCTION ANGLE
4
0
0
2
4
6
8
10
12
14
16
IT(RMS), RMS ON-STATE CURRENT (AMP)
i F , INSTANTANEOUS FORWARD CURRENT (AMP)
10
7
5
3
2
Figure 2. On-State Power Dissipation
VGTM , GATE TRIGGER VOLTAGE (NORMALIZED)
3
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1
0.7
0.5
0.3
0.2
1
0.7
0.5
0.3
–60
–40
–20
0
20
40
60
80
100
120
140
0.1
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
TJ, JUNCTION TEMPERATURE (°C)
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Typical Gate Trigger Voltage
Figure 5. Maximum On-State Characteristics
Motorola Thyristor Device Data
3–65
MAC15FP Series MAC15AFP Series
3
I H , HOLDING CURRENT (NORMALIZED)
2
I TSM , PEAK SURGE CURRENT (AMP)
GATE OPEN
APPLIES TO EITHER DIRECTION
300
200
1
0.7
0.5
100
70
50
TC = 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
1
2
3
5
NUMBER OF CYCLES
7
10
0.3
–60
30
–40
–20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Holding Current
1
0.5
0.2
Figure 7. Maximum Nonrepetitive Surge Current
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Z
θJC(t)
= r(t)
•
R
θJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1k
2k
5k
10 k
t, TIME (ms)
Figure 8. Thermal Response
3–66
Motorola Thyristor Device Data
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