Product Specification
PE3341
Product Description
The PE3341 is a high performance integer-N PLL with
embedded EEPROM capable of frequency synthesis up to
2700 MHz with a speed-grade option to 3000 MHz. The
EEPROM allows designers to permanently store control bits,
allowing easy configuration of self-starting synthesizers. The
superior phase noise performance of the PE3341 is ideal for
applications such as sonet, wireless base stations, fixed
wireless, and RF instrumentation systems.
The PE3341 features a ÷10/11 dual modulus prescaler,
counters, a phase comparator, and a charge pump as shown in
Figure 1. Counter values are programmable through a three-
wire serial interface.
The PE3341 UltraCMOS™ Phase Locked-Loop is
manufactured in Peregrine’s patented Ultra Thin Silicon
(UTSi®) CMOS process, offering excellent RF performance
with the economy and integration of conventional CMOS.
2700 MHz Integer-N PLL
with Field-Programmable EEPROM
Features
•
Field-programmable EEPROM for self-
starting applications
•
Standard 2700 MHz operation,
3000 MHz speed-grade option
•
÷10/11 dual modulus prescaler
•
Internal charge pump
•
Serial programmable
•
Low power — 20 mA at 3 V
•
Ultra-low phase noise
•
Available in 24-lead TSSOP or 20-lead
4x4 mm QFN package
Figure 1. Block Diagram
F
in
F
in
ENH
E_WR
Data
Clock
Serial
Interface
Mux
Enhancement
Register
(8-bit)
Primary
Register
(20-bit)
EE
Register
(20-bit)
Prescaler
÷10/11
M Counter
÷2 to ÷512
13
20
Secondary
Register
(20-bit)
PD_U
Phase
Detector
Charge
Pump
PD_D
CP
20
6
20
EELoad
Transfer
Logic
LD
2k
6
Cext
V
PP
S_WR
f
r
EESel
FSel
EEPROM
R Counter
÷1 to ÷64
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©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 17
PE3341
Product Specification
Figure 2. Pin Configurations (Top View)
V
DD
GND
ENH
S_WR
Data
Clock
GND
FSel
E_WR
1
2
3
4
5
6
24
23
22
21
20
19
Figure 3. Package Types
24-lead TSSOP, 20-lead QFN
f
r
EESel
17
GND
ENH
f
r
18
20
19
N/C
CP
V
DD
Dout
LD
EELoad
Cext
GND
F
in
S_WR
Data
Clock
FSel
E_WR
1
2
3
4
5
16
NC
EESel
V
DD
15
CP
V
DD
Dout
LD
EELoad
24-lead TSSOP
7
8
9
18
17
16
15
14
13
20-lead QFN
4x4 mm
Exposed Solder Pad
(Bottom Side)
14
13
12
11
V
PP
F
IN
V
DD
F
IN
V
PP
10
V
DD
11
F
in
12
Table 2. Pin Descriptions
Pin No.
TSSOP
1
2
3
20
Pin No.
QFN
19
Pin Name
V
DD
GND
ENH
Type
(Note 1)
(Note 2)
Input
C
EXT
10
6
7
8
9
Description
Power supply input. Input may range from 2.85 V to 3.15 V. Bypassing required.
Ground.
Enhancement mode control line. When asserted LOW, enhancement register bits are
functional. Internal 70 kΩ pull-up resistor.
Secondary Register WRITE input. Primary Register contents are copied to the
Secondary Register on S_WR rising edge. Also used to control Serial Port operation
and EEPROM programming.
Binary serial data input. Input data entered LSB (B
0
) first.
Serial clock input. Data is clocked serially into the 20-bit Primary Register, the 20-bit
EE Register, or the 8-bit Enhancement Register on the rising edge of Clock. Also used
to clock EE Register data out Dout port.
Ground.
Frequency Register selection control line. Internal 70 kΩ pull-down resistor.
Enhancement Register write enable. Also functions as a Serial Port control line.
Internal 70 kΩ pull-down resistor.
EEPROM erase/write programming voltage supply pin. Requires a 100pF bypass
capacitor connected to GND.
Same as pin 1.
Prescaler input from the VCO.
Prescaler complementary input. A series 50
Ω
resistor and DC blocking
capacitor
should be placed as close as possible to this pin and connected to the ground plane.
Ground.
Logical “NAND” of PD_U and PD_D terminated through an on-chip, 2 kΩ
series
resistor.
Connecting C
EXT
to an external capacitor will low pass filter the input to the
inverting amplifier used for driving LD.
Control line for Serial Data Port, Frequency Register selection, EE Register parallel
loading, and EEPROM programming. Internal 70 kΩ pull-down resistor.
Lock detect output, an open-drain logical inversion of C
EXT
. When the loop is in lock,
LD is high impedance; otherwise, LD is a logic LOW.
4
5
6
7
8
9
10
11
12
13
14
15
16
17
1
2
3
S_WR
Data
Clock
GND
Input
Input
Input
(Note 2)
Input
Input
Input
(Note 1)
Input
Input
(Note 2)
Output
Input
Output, OD
4
5
6
7
8
9
FSel
E_WR
V
PP
V
DD
F
in
F
in
GND
10
11
12
C
EXT
EELoad
LD
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 17
Document No. 70-0053-04
│
UltraCMOS™ RFIC Solutions
PE3341
Product Specification
Pin No.
TSSOP
18
19
20
21
22
23
24
Pin No.
QFN
13
14
15
16
17
Pin Name
Dout
V
DD
CP
N/C
EESel
GND
Type
Output
(Note 1)
Output
ENH.
Same as pin 1.
Description
Data out function. Dout is defined with the Enhancement Register and enabled with
Charge pump output. Sources current is when f
c
leads f
p
and sinks current when f
c
lags
f
p
.
No connection.
Control line for Frequency Register selection, EE Register parallel loading, and
EEPROM programming. Internal 70 kΩ
pull-up resistor.
Ground.
Reference frequency input.
Input
(Note 2)
Input
18
f
r
Notes 1:
V
DD
pins 1, 11, and 19 (TSSOP) or pins 6, 14 and 19 (QFN), are connected by diodes and must be supplied with the same positive voltage
level.
2:
Ground connections are made through the exposed solder pad. The solder pad must be soldered to the ground plane for proper operation.
Table 2. Absolute Maximum Ratings
Symbol
V
DD
V
I
T
Stg
Table 4. ESD Ratings
Units
V
V
°C
Parameter/Conditions
Supply voltage
Voltage on any digital
input
Storage temperature
range
Min
–0.3
–0.3
–65
Max
+4.0
V
DD
+0.3
+85
Symbol
V
ESD
V
ESD
(V
PP
)
Parameter/Conditions
ESD voltage human body
model (Note 1)
ESD voltage human body
model (Note 1)
Min
Max
1000
200
Units
V
V
Note 1:
Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC and AC Characteristics table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 3. DC Electrical Specifications
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating in Table 4.
Latch-Up Avoidance
Symbol
V
DD
T
A
Parameter/Conditions
Supply voltage
Operating ambient
temperature range
Min
2.85
-40
Max
3.15
85
Units
V
°C
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
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Page 3 of 17
PE3341
Product Specification
Table 5. DC Characteristics
V
DD
= 3.0 V, -40° C < T
A
< 85° C, unless otherwise specified
Symbol
I
DD
Digital Inputs: S_WR, Data, Clock
V
IH
V
IL
I
IH
I
IL
High-level input voltage
Low-level input voltage
High-level input current
Low-level input current
V
DD
= 2.85 to 3.15 V
V
DD
= 2.85 to 3.15 V
V
IH
= V
DD
= 3.15 V
V
IL
= 0, V
DD
= 3.15 V
-1
0.7 x V
DD
0.3 x V
DD
+1
V
V
µA
µA
Parameter
Operational supply current; Prescaler enabled
Conditions
V
DD
= 2.85 to 3.15 V
Min
Typ
20
Max
30
Units
mA
Digital inputs:
ENH,
EESel (contains a 70 kΩ pull-up resistor)
V
IH
V
IL
I
IH
I
IL
High-level input voltage
Low-level input voltage
High-level input current
Low-level input current
V
DD
= 2.85 to 3.15 V
V
DD
= 2.85 to 3.15 V
V
IH
= V
DD
= 3.15 V
V
IL
= 0, V
DD
= 3.15 V
-100
0.7 x V
DD
0.3 x V
DD
+1
V
V
µA
µA
Digital inputs: FSel, EELoad, E_WR (contains a 70 kΩ pull-down resistor)
V
IH
V
IL
I
IH
I
IL
High-level input voltage
Low-level input voltage
High-level input current
Low-level input current
V
DD
= 2.85 to 3.15 V
V
DD
= 2.85 to 3.15 V
V
IH
= V
DD
= 3.15 V
V
IL
= 0, V
DD
= 3.15 V
-1
0.7 x V
DD
0.3 x V
DD
+100
V
V
µA
µA
EE Memory Programming Voltage and Current: V
PP
, I
PP
V
PP
_WRITE
V
PP
_ERASE
I
PP
_WRITE
I
PP
_ERASE
EEPROM write voltage
EEPROM erase voltage
EEPROM write cycle current
EEPROM erase cycle current
-10
12.5
-8.5
30
V
V
mA
mA
Reference Divider input: f
r
I
IHR
I
ILR
High-level input current
Low-level input current
V
IH
= V
DD
= 3.15 V
V
IL
= 0, V
DD
= 3.15 V
-100
+100
µA
µA
Counter output: Dout
V
OLD
V
OHD
Output voltage LOW
Output voltage HIGH
I
out
= 6 mA
I
out
= -3 mA
V
DD
- 0.4
0.4
V
V
Lock detect outputs: (C
EXT
, LD)
V
OLC
V
OHC
V
OLLD
Output voltage LOW, C
EXT
Output voltage HIGH, C
EXT
Output voltage LOW, LD
I
out
= 0.1 mA
I
out
= -0.1 mA
I
out
= 1 mA
V
DD
- 0.4
0.4
0.4
V
V
V
Charge Pump output: CP
I
CP
– Source
I
CP
– Sink
I
CPL
VS.
Drive current
Drive current
Leakage current
Sink vs. source mismatch
Output current magnitude variation vs. voltage
V
CP
= V
DD
/ 2
V
CP
= V
DD
/ 2
1.0 V < V
CP
< V
DD
– 1.0 V
V
CP
= V
DD
/ 2, T
A
= 25° C
1.0 V < V
CP
< V
DD
– 1.0 V
T
A
= 25° C
-2.6
1.4
-1
-2
2
-1.4
2.6
1
15
15
mA
mA
µA
%
%
I
CP
- Source
I
CP
– Sink
I
CP
VS.
V
CP
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 17
Document No. 70-0053-04
│
UltraCMOS™ RFIC Solutions
PE3341
Product Specification
Table 6. AC Characteristics
V
DD
= 3.0 V, -40° C < T
A
< 85° C, unless otherwise specified
Symbol
f
Clk
t
ClkH
t
ClkL
t
DSU
t
DHLD
t
PW
t
CWR
t
CE
t
WRC
t
EC
t
EESU
t
EEPW
t
VPP
Parameter
Serial data clock frequency
Serial clock HIGH time
Serial clock LOW time
Data set-up time to Clock rising edge
Data hold time after Clock rising edge
S_WR pulse width
Clock rising edge to S_WR rising edge
Clock falling edge to E_WR transition
S_WR falling edge to Clock rising edge
E_WR transition to Clock rising edge
(Note 1)
Conditions
Min
Max
10
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Control Interface and Registers (see Figure 4)
30
30
10
10
30
30
30
30
30
EEPROM Erase/Write Programming (see Figures 5 & 6)
EELoad rising edge to V
PP
rising edge
V
PP
pulse width
V
PP
pulse rise and fall times
(Note 2)
500
25
1
30
ms
µs
Main Divider (Including Prescaler)
F
In
F
In
P
FIn
Operating frequency
Operating frequency
Input level range
Speed-grade option (Note 3)
External AC coupling
300
300
-5
2700
3000
5
MHz
MHz
dBm
Main Divider (Prescaler Bypassed)
F
In
P
FIn
Operating frequency
Input level range
(Note 4)
External AC coupling (Note 4)
50
-5
270
5
MHz
dBm
Reference Divider
f
r
P
fr
Phase Detector
f
c
Comparison frequency
(Note 6)
20
MHz
Operating frequency
Reference input power (Note 4)
(Note 5)
Single ended input
-2
100
MHz
dBm
SSB Phase Noise (F
in
= 1.3 GHz, f
r
= 10 MHz, f
c
= 1.25 MHz, LBW = 70 kHz, V
DD
= 3.0 V, Temp = -40° C
)
100 Hz Offset
1 kHz Offset
Note 1:
Note 2:
Note 3:
Note 4:
-75
-85
dBc/Hz
dBc/Hz
f
Clk
is verified during the functional pattern test. Serial programming sections of the functional pattern are clocked at 10 MHz to verify f
Clk
specification.
Rise and fall times of the V
PP
programming voltage pulse must be greater than 1
µs.
The maximum frequency of operation can be extended to 3.0 GHz by ordering a special speed-grade option. Please refer to Table 14,
Ordering Information, for ordering details.
CMOS logic levels can be used to drive F
In
input if DC coupled and used in Prescaler Bypass mode. Voltage input needs to be a minimum
of 0.5 Vp-p. For optimum phase noise performance, the reference input falling edge rate should be faster than 80 mV/ns. No minimum
frequency limit exists when operated in this mode.
CMOS logic levels can be used to drive reference input if DC coupled. Voltage input needs to be a minimum of 0.5 Vp-p. For optimum
phase noise performance, the reference input falling edge rate should be faster than 80 mV/ns.
Parameter is guaranteed through characterization only and is not tested.
Note 5:
Note 6:
Document No. 70-0053-04
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©2005 Peregrine Semiconductor Corp. All rights reserved.
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