MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC4DHM/D
Sensitive Gate TRIACS
Silicon Bidirectional Thyristors
•
Small Size Surface Mount DPAK Package
•
Passivated Die for Reliability and Uniformity
•
Four–Quadrant Triggering
•
Blocking Voltage to 600 V
•
On–State Current Rating of 4.0 Amperes RMS at 93°C
•
Low Level Triggering and Holding Characteristics
G
ORDERING INFORMATION
•
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DHM
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DHMT4
•
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DHM–1
MT2
MAC4DHM
MAC4DLM
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
TRIACS
4.0 AMPERES RMS
600 VOLTS
MT2
MT1
MT1
MT2
G
CASE 369A–13
STYLE 6
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 93°C)
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
≤
10
m
sec, TC = 93°C)
Average Gate Power
(t = 8.3 msec, TC = 93°C)
Peak Gate Current (Pulse Width
≤
10
m
sec, TC = 93°C)
Peak Gate Voltage (Pulse Width
≤
10
m
sec, TC = 93°C)
Operating Junction Temperature Range
Storage Temperature Range
MAC4DHM
MAC4DLM
IT(RMS)
4.0
ITSM
40
I2t
PGM
0.5
PG(AV)
0.1
IGM
VGM
TJ
Tstg
0.2
5.0
–40 to 110
–40 to 150
Amps
Volts
°C
6.6
A2sec
Watts
Symbol
VDRM
600
600
Amps
Value
Unit
Volts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes (3)
Symbol
R
q
JC
R
q
JA
R
q
JA
Max
3.5
88
80
Unit
°C/W
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
©
Motorola, Inc. 1997
1
MAC4DHM MAC4DLM
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristics
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
Peak On–State Voltage (1)
(ITM =
±
6.0 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
W
)
MT2(+), G(+)
MAC4DLM
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MAC4DHM
TJ = 25°C
TJ = 110°C
VTM
—
IGT
—
—
—
—
—
—
—
—
VGT
0.5
0.5
0.5
0.5
0.1
IH
—
IL
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 5.0 mA)
(VD = 12 V, IG = 10 mA)
—
—
—
—
1.75
5.2
2.1
2.2
10
10
10
10
1.5
15
mA
0.62
0.57
0.65
0.74
0.4
1.3
1.3
1.3
1.3
—
mA
1.8
2.1
2.4
4.2
1.8
2.1
2.4
4.2
3.0
3.0
3.0
5.0
5.0
5.0
5.0
10
Volts
1.3
1.6
mA
Symbol
IDRM
—
—
—
—
0.01
2.0
Volts
Min
Typ
Max
Unit
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
W
)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(VD = 12 V, RL = 10 K
W
, TJ = 110°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–); MT2(–), G(+)
Holding Current
(VD = 12 V, Gate Open, IT =
±
200 mA)
Latching Current
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
DYNAMIC CHARACTERISTICS
Characteristics
Rate of Change of Commutating Current (1)
(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/
m
sec, TJ = 110°C,
f = 250 Hz, CL = 5.0
m
fd, LL = 80 mH, RS = 56
W
, CS = 0.03
m
fd)
See Figure 10
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 110°C)
(1) Pulse test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
Symbol
di/dt(c)
—
3.0
—
Min
Typ
Max
Unit
A/ms
dv/dt
—
10
—
V/
m
s
2
Motorola Thyristor Device Data
MAC4DHM MAC4DLM
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
110
6.0
180°
5.0
α
α
dc
105
a
= 30°
60°
90°
120°
90°
4.0
3.0
2.0
a
= CONDUCTION ANGLE
100
α
α
95
120°
a
= CONDUCTION ANGLE
180°
dc
3.5
4.0
a
= 30°
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
60°
90
0
0.5
1.0
1.5
2.0
2.5
3.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TYPICAL @ TJ = 25°C
10
MAXIMUM @ TJ = 110°C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
0.1
Z
q
JC(t) = R
q
JC(t)
S
r(t)
1.0
MAXIMUM @ TJ = 25°C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
8.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
7.0
6.0
5.0
4.0
Q2
3.0
Q1
2.0
1.0
0
–40 –25
–10
5.0
20
35
50
65
80
95
110
Q3
Q4
1.0
Q4
Q1
0.8
Q2
0.6
Q3
0.4
0.2
–40 –25
–10
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Motorola Thyristor Device Data
3
MAC4DHM MAC4DLM
5.0
12
10
8.0
6.0
4.0
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
4.0
3.0
MT2 NEGATIVE
2.0
MT2 POSITIVE
1.0
0
–40 –25
Q2
Q4
Q3
2.0 Q1
0
–10
5.0
20
35
50
65
80
95
110
–40 –25
–10
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
20
MT2 POSITIVE
15
STATIC dv/dt (V/
m
s)
MT2 NEGATIVE
10
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/
m
s)
VD = 400 V
TJ = 110°C
10
VPK = 400 V
TJ = 110°C
100°C
90°C
1.0
5.0
tw
VDRM
f=
1
2 tw
6f I
(di/dt)c = TM
1000
0
100
1000
RGK, GATE–MT1 RESISTANCE (OHMS)
10 K
0.1
0
1.0
2.0
3.0
4.0
5.0
6.0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(+)
Figure 10. Critical Rate of Rise of
Commutating Voltage
4
Motorola Thyristor Device Data
MAC4DHM MAC4DLM
80 mHY
LL
MEASURE
I
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
RS
56
W
–
CS
2
1N914 51
G
1
0.03
m
F
+
ADJUST FOR
dv/dt(c)
1N4007
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
200 V
5
m
F
NON-POLAR
CL
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
Motorola Thyristor Device Data
5
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