MAC4DSM, MAC4DSN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
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Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
Blocking Voltage to 800 V
On−State Current Rating of 4.0 Amperes RMS at 108°C
Low IGT − 10 mA Maximum in 3 Quadrants
High Immunity to dv/dt − 50 V/ms at 125°C
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
TRIACS
4.0 AMPERES RMS
600 − 800 VOLTS
MT2
G
MT1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(Note 1) (T
J
= −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4DSM
MAC4DSN
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz,
T
C
= 108°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 125°C)
Circuit Fusing Consideration
(t = 8.3 msec)
Peak Gate Power
(Pulse Width
≤
10
msec,
T
C
= 108°C)
Average Gate Power
(t = 8.3 msec, T
C
= 108°C)
Peak Gate Current
(Pulse Width
≤
10
msec,
T
C
= 108°C)
Peak Gate Voltage
(Pulse Width
≤
10
msec,
T
C
= 108°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
4.0
A
Value
Unit
V
1 2
3
4
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
YWW
AC
4DSx
4
DPAK−3
CASE 369D
STYLE 6
2
3
Y
WW
x
= Year
= Work Week
= M or N
YWW
AC
4DSx
I
TSM
40
A
1
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
stg
6.6
0.5
0.1
0.2
5.0
−40 to 125
−40 to 150
A
2
sec
W
W
1
A
V
°C
°C
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
©
Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 4
Publication Order Number:
MAC4DSM/D
MAC4DSM, MAC4DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
Thermal Resistance
− Junction−to−Ambient
Thermal Resistance
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
3.5
88
80
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage (Note 4)
(I
TM
=
±
6.0 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
T
J
= 125°C
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±
200 mA)
Latching Current (V
D
= 12 V, I
G
= 10 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Characteristic
Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 3.5 A, Commutating dv/dt = 10 V/msec,
Gate Open, T
J
= 125°C, f = 500 Hz, CL = 5.0
mF,
LL = 20 mH,
No Snubber)
See Figure 16
Critical Rate of Rise of Off−State Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125°C)
Symbol
di/dt(c)
Min
3.0
Typ
4.0
Max
−
Unit
A/ms
V
TM
I
GT
2.9
2.9
2.9
V
GT
0.5
0.5
0.5
V
GD
I
H
I
L
−
−
−
6.0
10
6.0
30
30
30
0.2
2.0
0.7
0.65
0.7
0.4
5.5
1.3
1.3
1.3
−
15
V
mA
mA
4.0
5.0
7.0
10
10
10
V
−
1.3
1.6
V
mA
T
J
= 25°C
T
J
= 125°C
I
DRM,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
dv/dt
50
175
−
V/ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
ORDERING INFORMATION
Device
MAC4DSM−001
MAC4DSMT4
MAC4DSN−001
MAC4DSNT4
Package Type
DPAK−3
DPAK
DPAK−3
DPAK
Package
369D
369C
369D
369C
Shipping
†
75 Units / Rail
16 mm Tape & Reel (2.5 k / Reel)
75 Units / Rail
16 mm Tape & Reel (2.5 k / Reel)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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MAC4DSM, MAC4DSN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off−State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off−State Voltage
Peak Reverse Blocking Current
Maximum On−State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC4DSM, MAC4DSN
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
125
6.0
180°
5.0
α
α
dc
120
a
= 30°
60°
90°
120°
90°
4.0
3.0
2.0
a
= CONDUCTION ANGLE
115
α
α
110
a
= CONDUCTION ANGLE
120°
180°
dc
3.5
4.0
a
= 30°
1.0
0
0
1.0
2.0
3.0
60°
105
0
0.5
1.0
1.5
2.0
2.5
3.0
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
4.0
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
IT, INSTANTANEOUS ON−STATE CURRENT (AMPS)
TYPICAL @ T
J
= 25°C
10
MAXIMUM @ T
J
= 125°C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
0.1
Z
qJC(t)
= R
qJC(t)
Sr(t)
1.0
MAXIMUM @ T
J
= 25°C
0.1
0
1.0
2.0
3.0
4.0
5.0
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 k
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
18
I GT, GATE TRIGGER CURRENT (mA)
16
14
12
10
8.0
6.0
4.0
2.0
0
−50
Q1
VGT, GATE TRIGGER VOLTAGE(VOLTS)
Q3
1.0
Q3
0.8
Q2
Q1
Q2
0.6
0.4
0.2
−25
0
25
50
75
100
125
−50
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
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MAC4DSM, MAC4DSN
14
12
IH , HOLDING CURRENT (mA)
10
MT2 NEGATIVE
8.0
6.0
4.0
2.0
0
−50
−25
0
25
50
75
100
125
MT2 POSITIVE
IL, LATCHING CURRENT (mA)
20
Q1
Q3
10
25
Q2
15
5.0
0
−50
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
1000
T
J
= 125°C
800
STATIC dv/dt (V/
m
s)
STATIC dv/dt (V/
m
s)
600
V
PK
= 400 V
600 V
200
0
100
1000
R
G−MT1
, GATE−MT1 RESISTANCE (OHMS)
10 k
800 V
1200
T
J
= 125°C
1000
800
600
400
200
0
100
1000
R
G−MT1
, GATE−MT1 RESISTANCE (OHMS)
10 k
600 V
V
PK
= 400 V
400
800 V
Figure 9. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(+)
Figure 10. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(−)
800
GATE OPEN
STATIC dv/dt (V/
m
s)
STATIC dv/dt (V/
m
s)
600
T
J
= 100°C
400
110°C
125°C
200
2000
1600
T
J
= 100°C
1200
110°C
800
125°C
GATE OPEN
400
0
400
500
600
700
800
400
500
600
700
800
V
PK
, PEAK VOLTAGE (VOLTS)
V
PK
, PEAK VOLTAGE (VOLTS)
0
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(−)
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