PD - 97377
IRFB3004PbF
IRFS3004PbF
IRFSL3004PbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
D
HEXFET
®
Power MOSFET
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
D
40V
1.4m
Ω
1.75m
Ω
340A
c
195A
S
D
G
D
S
G
S
G
D
S
TO-220AB
IRFB3004PbF
D
2
Pak
IRFS3004PbF
TO-262
IRFSL3004PbF
G
D
S
Gate
Drain
Max.
340c
240c
195
1310
380
2.5
± 20
4.4
-55 to + 175
300
10lbfxin (1.1Nxm)
300
See Fig. 14, 15, 22a, 22b
Source
Units
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
e
Avalanche Current
d
Repetitive Avalanche Energy
d
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
R
θJA
Parameter
Junction-to-Case
kl
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D Pak
j
2
Typ.
–––
0.50
–––
–––
Max.
0.40
–––
62
40
Units
°C/W
www.irf.com
1
02/26/09
IRFB/S/SL3004PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
40
–––
–––
2.0
–––
–––
–––
–––
–––
––– –––
0.037 –––
1.4 1.75
–––
4.0
–––
20
––– 250
––– 100
––– -100
2.2
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mAd
mΩ V
GS
= 10V, I
D
= 195A
g
V V
DS
= V
GS
, I
D
= 250µA
µA V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
i
Effective Output Capacitance (Time Related)h
Min. Typ. Max. Units
1170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
40
68
92
23
220
90
130
9200
2020
1340
2440
2690
–––
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 195A
I
D
= 187A
V
DS
=20V
V
GS
= 10V
g
I
D
= 187A, V
DS
=0V, V
GS
= 10V
V
DD
= 26V
I
D
= 195A
R
G
= 2.7Ω
V
GS
= 10V
g
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V
i,
See Fig. 11
V
GS
= 0V, V
DS
= 0V to 32V
h
ns
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
––– 340c
–––
1310
A
A
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
––– –––
1.3
V
–––
27
–––
ns
–––
31
–––
–––
18
–––
nC
T
J
= 125°C
–––
41
–––
–––
1.2
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
g
T
J
= 25°C
V
R
= 34V,
T
J
= 125°C
I
F
= 195A
di/dt = 100A/µs
g
T
J
= 25°C
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.016mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
195A, di/dt
≤
930A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
www.irf.com
IRFB/S/SL3004PbF
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
1000
BOTTOM
4.5V
100
4.5V
100
≤
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 195A
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 25V
≤60µs
PULSE WIDTH
1
2
3
4
5
6
7
8
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 187A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRFB/S/SL3004PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
2.0
1
10
VDS, Drain-to-Source Voltage (V)
100
VSD, Source-to-Drain Voltage (V)
100
T J = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
350
300
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
50
Id = 5mA
48
Limited By Package
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
ID
TOP
30A
54A
BOTTOM 195A
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10 15 20 25 30 35 40 45
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
www.irf.com
IRFB/S/SL3004PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.00646
0.10020
0.18747
0.10667
0.000005
0.000124
0.001374
0.008465
τi
(sec)
τ
1
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
320
280
EAR , Avalanche Energy (mJ)
240
200
160
120
80
40
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
75
100
125
150
175
Starting T J , Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
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