MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MAC6071/D
Advance Information
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Sensitive Gate Triggering (A and B versions) Uniquely Compatible for Direct
Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic
Functions
•
Gate Triggering 4 Mode — MAC6071A,B, MAC6073A,B, MAC6075A,B
•
Blocking Voltages to 600 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAC6071A,B
*
MAC6073A,B
*
MAC6075A,B
*
*Motorola preferred devices
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
MT1
MT2
G
MT2
G
MT2 MT1
CASE 77-08
(TO-225AA)
STYLE 5
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = 25 to 110°C)
MAC6071A,B
MAC6073A,B
MAC6075A,B
IT(RMS)
ITSM
I2t
PGM
PG(AV)
VGM
TJ
Tstg
—
Symbol
VDRM
200
400
600
4
30
3.7
10
0.5
5
–40 to +110
–40 to +150
8
Amps
Amps
A2s
Watts
Watt
Volts
°C
°C
in. lb.
Value
Unit
Volts
On-State Current RMS (TC = 85°C)
Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (6-32 Screw)(2)
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
©
Motorola, Inc. 1996
1
MAC6071A,B MAC6073A,B MAC6075A,B
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θJA
Max
3.5
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Peak Blocking Current
(VD = Rated VDRM, gate open)
On-State Voltage (Either Direction)
(ITM = 6 A Peak)
Peak Gate Trigger Voltage (Continuous dc)
(TJ = –40°C) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
(TJ = 110°C)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
(TJ = 25°C)
MT2(+), G(+); MT2(–), G(–)
MT2(+), G(–); MT2(–), G(+)
Holding Current (Either Direction)
(TJ = –40°C) (Main Terminal Voltage = 12 Vdc, Gate Open)
(Initiating Current = 150 mA)
(TJ = 25°C)
Latching Current
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(VD = 6 V)
(IG = 8 mA)
(IG = 8 mA)
(IG = 8 mA)
(IG = 15 mA)
TJ = 25°C
(TJ = 25°C)
(TJ = 110°C)
VTM
VGT
0.5
0.5
0.2
0.2
0.4
0.4
IH
0.4
0.2
IL
—
—
—
—
IGT
2.0
5.0
1.0
2.0
10
20
10
10
mA
2.0
1.0
10
5.0
mA
0.8
0.8
0.4
0.4
0.7
0.7
1.9
1.9
0.9
0.9
1.4
1.4
mA
Symbol
IDRM
—
—
—
—
—
1.3
10
2.0
2.0
Min
Typ
Max
Unit
µA
mA
Volts
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MAC6071A, MAC6073A, MAC6075A
MT2(+), G(+)
TJ = 25°C
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
TJ = –40°C
0.4
0.4
0.4
0.8
0.8
0.8
0.8
1.6
2.0
3.0
3.0
4.5
3.5
4.5
5.0
10
5.0
5.0
5.0
10
10
10
10
20
2
Motorola Thyristor Device Data
MAC6071A,B MAC6073A,B MAC6075A,B
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MAC6071B, MAC6073B, MAC6075B
MT2(+), G(+)
TJ = 25°C
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
Turn-On Time (Either Direction)
(ITM = 14 Adc, IGT = 100 mAdc)
TJ = –40°C
Symbol
IGT
Min
Typ
Max
Unit
mA
0.4
0.4
0.4
0.8
0.8
0.8
0.8
1.6
tgt
—
1.5
2.5
2.5
3.5
3.0
4.0
4.5
7.5
1.5
3.0
3.0
3.0
5.0
8.0
8.0
8.0
15
—
µs
DYNAMIC CHARACTERISTICS
Characteristic
Critical Rate of Rise of Off–State Voltage
(VD = 200 V, ITM = 1.4 A, Commutating dv/dt = 0.5 V
m
/sec,
Gate Open, TJ = 110°C, f = 250 Hz, Snubber: CS = 0.1
m
F, RS = 56
W
,
see Figure 16)
Critical Rate of Rise of Off–State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = OPEN, TJ = 110°C)
Symbol
(di/dt)c
—
2.2
—
Min
Typ
Max
Unit
A/ms
dv/dt
—
7.0
—
V/
m
s
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0V
14
MC7400
4
7
VEE = 5.0 V
+
2N6071A
LOAD
115 VAC
60 Hz
–VEE
510
Ω
QUADRANT DEFINITIONS
MT2(+)
QUADRANT II
QUADRANT I
MT2(+), G(–)
MT2(+), G(+)
G(–)
QUADRANT III
QUADRANT IV
G(+)
MT2(–), G(–)
MT2(–)
MT2(–), G(+)
NOTES: For detail Digital Interfacing and Silicon Bilateral Switch (SBS) trigger application information, see
the Motorola’s Thyristor Data Book (DL137/D, Revision 6).
1. Interfacing Digital Circuits to Thyristor Controlled AC Loads, page 1.6–25.
2. Silicon Bilateral Switch (SBS) Applications, page 1.6–41.
Motorola Thyristor Device Data
3
MAC6071A,B MAC6073A,B MAC6075A,B
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
AVERAGE POWER P(AV) DISSIPATION (WATTS)
110
7.0
6.0
5.0
4.0
60°
3.0
2.0
1.0
0
α
α
= CONDUCTION ANGLE
α
DC
180°
120°
90°
105
100
T
= 30°
α
α
α
= CONDUCTION ANGLE
60°
90°
120°
95
T
= 30°
90
180°
DC
2.0
2.5
3.0
3.5
4.0
85
0
0.5
1.0
1.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. Maximum On–State Power
Dissipation
Z
q
JC(t)
°
C/W TRANSIENT THERMAL RESISTANCE
10
IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)
100
TYPICAL @ TJ = 25°C
10
MAXIMUM @ TJ = 110°C
MAXIMUM
1.0
1.0
0.1
MAXIMUM @ TJ = 25°C
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
0.1
1.0
10
100
1
S
103
1
S
104
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
2.5
9.0
8.0
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
2.0
7.0
6.0
5.0
4.0
3.0
Q4 IG = 15 mA
Q2 IG = 8 mA
1.5
MT2 NEGATIVE
1.0
MT2 POSITIVE
0.5
2.0 Q1 IG = 8 mA
1.0
Q3 IG = 8 mA
–20
0
20
40
60
80
100 110
0
–40
–20
0
20
40
60
80
100 110
0
–40
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature (MAC6075B)
4
Motorola Thyristor Device Data
MAC6071A,B MAC6073A,B MAC6075A,B
8.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
0.9
0.8
0.7
0.6
Q1
0.5
0.4
0.3
–40
Q2
Q3
Q4
6.0
Q4
Q3
4.0
Q2
Q1
2.0
0
–40
–20
0
20
40
60
80
100 110
–20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
24
VPK = 400 V
22
STATIC dv/dt (V/uS)
STATIC dv/dt (V/uS)
TJ = 110°C
25
30
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
RG–MT1 = 510
W
TJ = 100°C
20
500 V
20
110°C
18
600 V
16
100
200
300
400
500
600
700
800
900
1000
15
120°C
10
400
450
500
550
600
RGK, GATE–MT1 RESISTANCE (OHMS)
VPK, PEAK VOLTAGE (VOLTS)
Figure 9. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(+)
30
VPK = 400 V
25
STATIC dv/dt (V/uS)
STATIC dv/dt (V/uS)
10.5
11
Figure 10. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(+)
RG–MT1 = 510
W
TJ = 110°C
VPK = 400 V
20
500 V
600 V
10
500 V
15
9.5
600 V
10
100
105
110
115
120
9.0
100
200
300
400
500
600
700
800
900
1000
TJ, JUNCTION TEMPERATURE (°C)
RGK, GATE–MT1 RESISTANCE (OHMS)
Figure 11. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 12. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(–)
Motorola Thyristor Device Data
5
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