MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TRIACS
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave control of ac
loads such as appliance controls, heater controls, motor controls, and other
power switching applications.
•
Sensitive Gate Allows Triggering by Microcontrollers and other Logic
Circuits
•
High Immunity to dv/dt — 25 V/
m
s Minimum at 110
_
C
•
High Commutating di/dt — 8.0 A/ms Minimum at 110
_
C
•
Minimum and Maximum Values of IGT, VGT and IH Specified for ease of
Design
•
On-State Current Rating of 8 Amperes RMS at 70
_
C
•
High Surge Current Capability — 70 Amperes
•
Blocking Voltage to 800 Volts
•
Rugged, Economical TO220AB Package
MAC8S
SERIES
TRIACS
8 AMPERES RMS
400 THRU 800
VOLTS
MT2
MT1
MT2
G
CASE 221A–06
(TO-220AB)
STYLE 4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Off-State Voltage (1)
(TJ = –40 to 110°C, Sine Wave, 50 to 60Hz, Gate Open)
MAC8SD
MAC8SM
MAC8SN
IT(RMS)
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
Symbol
VDRM
400
600
800
8
70
20
16
0.35
– 40 to +110
– 40 to +150
A
A
A2sec
Watts
Watts
°C
°C
Value
Unit
Volts
On-State RMS Current
(Full Cycle Sine Wave, 60Hz, TJ = 70°C)
Peak Non-repetitive Surge Current
(One Half Cycle, 60Hz, TJ = 110°C)
Circuit Fusing Consideration
(t = 8.3 ms)
Peak Gate Power
(Pulse Width
≤
1.0µs, TC = 70°C)
Average Gate Power
(t = 8.3ms, TC = 70°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
°C/W
R
θJC
R
θJA
TL
2.2
62.5
260
°C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 0
Motorola Thyristor
©
Motorola, Inc. 1995
Device Data
1
Data Sheets
MAC8S SERIES
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
IDRM
TJ = 25°C
TJ = 110°C
—
—
—
—
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage* (ITM =
11A)
VTM
IGT
—
.8
.8
.8
—
2.0
3.0
3.0
3.0
5.0
10
5.0
0.62
0.60
0.65
1.85
5.0
5.0
5.0
10
15
20
15
Volts
mA
Continuous Gate Trigger Current (VD = 12 V, RL = 100Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Hold Current (VD = 12V, Gate Open, Initiating Current =
Latching Current (VD = 24V, IG = 5mA)
MT2(+), G(+)
MT2(–), G(–)
MT2(+), G(–)
150mA)
IH
IL
1.0
2.0
2.0
2.0
mA
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VGT
0.45
0.45
0.45
1.5
1.5
1.5
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10V
m
/sec,
Gate Open, TJ = 110
_
C, f= 500 Hz, Snubber: CS = 0.01
m
F, RS = 15
W
,
see Figure 16.)
Critical Rate of Rise of Off-State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = 510
W
, TJ = 110°C)
* Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(dv/dt)c
8.0
10
—
A/ms
dv/dt
25
75
—
V/
m
s
T C , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°C)
P(AV), AVERAGE POWER DISSIPATION (WATTS)
110
25
DC
180°
120°
90°
60°
100
20
α
a
= 30 and 60°
90
α
α
α
15
a
= CONDUCTION ANGLE
80
10
a
= CONDUCTION ANGLE
70
60
90°
180°
DC
5
a
= 30°
0
2
4
6
8
10
IT(RMS), RMS ON–STATE CURRENT (AMPS)
12
0
0
2
4
6
8
10
IT(RMS), RMS ON–STATE CURRENT (AMPS)
12
Figure 1.0 RMS Current Derating
Figure 2.0 Maximum On–State Power Dissipation
Data Sheets
2
Motorola Thyristor Device Data
MAC8S SERIES
R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
I T, INSTANTANOUS ON–STATE CURRENT (AMPS)
100
1
Typical @ TJ = 25
°C
Maximum @
TJ = 110°C
10
Z
q
JC(t) = R
q
JC(t)
r(t)
0.1
1
Maximum @
TJ = 25
°C
0.1
0.5
1
2.5
3
3.5
4.5
1.5
2
4
5
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
5.5
6
0.01
0.1
1
10
100
t, TIME (ms)
1000
1
@
4
10
Figure 3.0 On–State Characteristics
Figure 4.0 Transient Thermal Response
10
I L , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)
8
25
20
6
MT2 NEGATIVE
4
MT2 POSITIVE
2
15
10
5
Q1
Q3
0
–40
–25
–10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110
0
–40
–25
–10
5
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
Figure 5.0 Typical Holding Current Versus
Junction Temperature
Figure 6.0 Typical Latching Current Versus
Junction Temperature
14
V GT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
12
10
8
6
Q2
4
2
Q1
0
–40
–25
–10
5
20
35
50
65
TJ, JUNCTION TEMPERATURE (°C)
80
95
110
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
–40
–25
–10
5
20
35
50
65
TJ, JUNCTION TEMPERATURE (°C)
Q2
Q1
80
95
110
Q3
Q3
Q1
Q3
Figure 7.0 Typical Gate Trigger Current Versus
Junction Temperature
Motorola Thyristor Device Data
3
Figure 8.0 Typical Gate Trigger Voltage Versus
Junction Temperature
Data Sheets
MAC8S SERIES
200
180
STATIC dv/dt (V/
m
S)
160
140
800V
120
100
90
80
60
100
200
300
400
500
600
700
800
RGK, GATE–MT1 RESISTANCE (OHMS)
900
1000
80
400
450
500
550
600
650
VPK, Peak Voltage (Volts)
120°C
600V
VPK = 400V
TJ = 110°C
120
STATIC dv/dt (V/
m
S)
TJ = 100°C
110
110°C
130
RG – MT1 = 510
W
100
700
750
800
Figure 9.0 Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(+)
Figure 10.0 Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(+)
130
120
STATIC dv/dt (V/
m
S)
STATIC dv/dt (V/
m
S)
110
100
90
80
70
100
RG – MT1 = 510
W
800V
105
110
115
TJ, Junction Temperature (°C)
120
125
VPK = 400V
350
300
TJ = 100°C
250
110°C
200
RG – MT1 = 510
W
120°C
600V
150
100
400
450
500
550
600
650
VPK, Peak Voltage (Volts)
700
750
800
Figure 11.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(+)
Figure 12.0 Typical Exponential Static dv/dt Versus
Peak Voltage, MT2(–)
350
300
300
VPK = 400V
250
STATIC dv/dt (V/
m
S)
VPK = 400V
600V
STATIC dv/dt (V/
m
S)
250
200
800V
150
100
50
100
RG – MT1 = 510
W
105
600V
200
800V
150
TJ = 110°C
110
115
TJ, Junction Temperature (°C)
120
125
100
100
200
300
700
800
900
400
500
600
RGK, GATE–MT1 RESISTANCE (OHMS)
1000
Figure 13.0 Typical Exponential Static dv/dt Versus
Junction Temperature, MT2(–)
Figure 14.0 Typical Exponential Static dv/dt Versus
Gate–MT1 Resistance, MT2(–)
Data Sheets
4
Motorola Thyristor Device Data
MAC8S SERIES
(dv/dt)c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/
m
s)
100
VPK = 400V
90°C
10
1
2 t
w
6f I
TM
1000
100°C
f=
t
w
(di/dt)
c
=
V
DRM
110°C
1
5
10
15
20
25
30
(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
1
Figure 15.0 Critical Rate of Rise of
Commutating Voltage
400 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CONTROL
20 mHY
LL
MEASURE
I
TRIGGER CONTROL
RS
15
W
1N4007
CHARGE
CS
2
1N914 51
G
1
5
m
F
NON-POLAR
CL
–
0.01
m
F
+
ADJUST FOR
dv/dt(c)
400 V
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 16.0 Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
Motorola Thyristor Device Data
5
Data Sheets
测试/测量
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