MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC97/D
Silicon Bidirectional
Triode Thyristors
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light
industrial or consumer application. Supplied in an inexpensive TO–92 package which
is readily adaptable for use in automatic insertion equipment.
•
One–Piece, Injection–Molded Unibloc Package
•
Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially for Circuits that Source Gate Drives
•
All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage
(Gate Open, TJ = –40 to +110°C)(1)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC97–4, MAC97A4
MAC97–6, MAC97A6
MAC97–8, MAC97A8
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C)
Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, TA = 110°C)
Circuit Fusing Considerations
TJ = –40 to +110°C (t = 8.3 ms)
Symbol
VDRM
Value
Unit
Volts
MAC97,A
IMPROVED
SERIES
(Device Date Code
9625 and Up)
Motorola preferred devices
TRIACs
0.8 AMPERE RMS
200 — 600 VOLTS
200
400
600
IT(RMS)
ITSM
I2t
VGM
0.8
8.0
0.26
5.0
5.0
0.1
1.0
–40 to +110
–40 to +150
Amp
Amps
A2s
Volts
Watts
Watt
Amp
°C
°C
MT1
MT2
G
v
2.0
m
s)
Peak Gate Power (t
v
2.0
m
s)
Peak Gate Voltage (t
Peak Gate Current (t
Average Gate Power (TC = 80°C, t
v
2.0
m
s)
v
8.3 ms)
PGM
PG(AV)
IGM
TJ
Tstg
MT1
G
MT2
Operating Junction Temperature Range
Storage Temperature Range
CASE 29–04
TO–226AA, STYLE 12
(TO–92)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θJA
Max
75
200
Unit
°C/W
°C/W
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be
tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Thyristor Device Data
©
Motorola, Inc. 1996
1
MAC97,A IMPROVED SERIES
ELECTRICAL CHARACTERISTICS
(TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Characteristic
Peak Blocking Current(1)
(VD = Rated VDRM, TJ = 110°C, Gate Open)
Peak On-State Voltage (Either Direction)
(ITM = 1.1 A Peak; Pulse Width
2.0 ms, Duty Cycle
Symbol
IRRM
Min
—
—
Typ
—
—
Max
0.1
1.65
Unit
mA
Volts
mA
—
—
—
—
—
—
—
—
VGT
—
—
—
—
0.1
0.1
IH
tgt
dv/dtc
—
—
1.5
—
—
—
—
—
—
—
2.0
—
2.0
2.0
2.0
2.5
—
—
5.0
—
—
mA
s
—
—
—
—
—
—
—
—
10
10
10
10
5.0
5.0
5.0
7.0
Volts
v
v
2.0%)
VTM
IGT
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MAC97
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MAC97A
Gate Trigger Voltage, (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G(–) All Types
MT2(–), G(–) All Types
MT2(–), G(+) All Types
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) All Types
MT2(–), G(+) All Types
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate Controlled Turn–On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
Critical Rate–of–Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,
On–State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150
W
, See Figure 13)
Critical Rate–of–Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method)
m
V
/m
s
dv/dt
10
—
—
V
/m
s
2
Motorola Thyristor Device Data
MAC97,A IMPROVED SERIES
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
110
I T(RMS) , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
100
90
DC
80
180°
70
60
50
40
30
0
α
α
= CONDUCTION ANGLE
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
α
120°
110
T
= 30°
60°
90°
100
90
80
70
60
50
40
30
20
0
α
α
= CONDUCTION ANGLE
0.05
0.1
0.15
α
DC
180°
T
= 30°
60°
90°
120°
0.2
0.25
0.3
0.35
0.4
IT(RMS), RMS ON–STATE CURRENT (AMPS)
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 2. RMS Current Derating
IT, INSTANTANEOUS ON–STATE CURRENT (AMPS)
1.2
1.0
0.8
0.6
0.4
0.2
0
α
α
= CONDUCTION ANGLE
α
10
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1.0
MAXIMUM @ TJ = 25°C
0.1
MAXIMUM @ TJ = 110°C
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IT(RMS), RMS ON–STATE CURRENT (AMPS)
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. Power Dissipation
R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 4. On–State Characteristics
1.0
I TSM , PEAK SURGE CURRENT (AMPS)
10
Z JC(t) = R JC(t)
@
r(t)
0.1
Q
Q
5.0
3.0
2.0
TJ = 110°C
f = 60 Hz
CYCLE
Surge is preceded and followed by rated current.
1.0
1.0
2.0
3.0
5.0
10
30
50
100
0.01
0.1
1.0
10
100
1
S
103
1
S
104
t, TIME (ms)
NUMBER OF CYCLES
Figure 5. Transient Thermal Response
Figure 6. Maximum Allowable Surge Current
Motorola Thyristor Device Data
3
MAC97,A IMPROVED SERIES
6.0
5.0
4.0
3.0
2.0
1.0
0
–40
MAIN TERMINAL
#2 NEGATIVE
MAIN TERMINAL
#2 POSITIVE
I GT, GATE TRIGGER CURRENT (mA)
10
Q3
I H, HOLDING CURRENT (mA)
Q2
Q1
1.0
Q4
–20
0
20
40
60
80
100 110
0.1
–40
–20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current Variation
Figure 8. Typical Gate Trigger Current
Variation
60
600 Vpk
TJ = 110°C
1.1
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.9
Q2
0.7
Q1
Q4
STATIC dv/dt (V/
m
S)
Q3
50
MAIN TERMINAL
#2 POSITIVE
MAIN TERMINAL
#2 NEGATIVE
40
0.5
30
0.3
–40
–20
0
20
40
60
80
100
20
10
100
1000
10,000
TJ, JUNCTION TEMPERATURE (°C)
RGK, GATE – MT1 RESISTANCE (OHMS)
Figure 9. Gate Trigger Voltage Variation
Figure 10. Exponential Static dv/dt versus
Gate MT1 Resistance
10
10
60 Hz
180 Hz
60°C
COMMUTATING dv/dt
dv/dtc , (V/
m
S)
ITM
100°C
110°C
tw
80°C
COMMUTATING dv/dt
dv/dtc , (V/
m
S)
300 Hz
400 Hz
f
VDRM
1.0
1.0
+
2t1
w
(di dt)
c
+
6f I
TM
1000
10
1.0
60
VDRM = 200 V
70
80
90
100
110
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
4
Motorola Thyristor Device Data
MAC97,A IMPROVED SERIES
80 mHY
LL
75 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER CONTROL
TRIGGER
CHARGE
CHARGE
CONTROL
MEASURE
I
RS
56
1N4007
–
2
1N914
CS
0.047 CS
ADJUST FOR
dv/dt(c)
200 V
+
51
G
1
5
m
F
NON–POLAR
CL
NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 13. Simplified Q1 (dv/dt)c Test Circuit
Motorola Thyristor Device Data
5
测试/测量
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