Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-252AA |
| 包装说明 | LEAD FREE, PLASTIC, DPAK-3 |
| 针数 | 3 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 160 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (Abs) (ID) | 26 A |
| 最大漏极电流 (ID) | 26 A |
| 最大漏源导通电阻 | 0.05 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 79 W |
| 最大脉冲漏极电流 (IDM) | 80 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrier |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRLR4343TRPBF | IRLR4343TRR | IRLR4343TRLPBF | IRLR4343TRRPBF | IRLR4343TR | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 |
| 是否Rohs认证 | 符合 | 不符合 | 符合 | 符合 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| 包装说明 | LEAD FREE, PLASTIC, DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | LEAD FREE, PLASTIC, DPAK-3 | LEAD FREE, PLASTIC, DPAK-3 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | not_compliant | unknown | not_compliant | not_compliant | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 160 mJ | 160 mJ | 160 mJ | 160 mJ | 160 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (ID) | 26 A | 26 A | 26 A | 26 A | 26 A |
| 最大漏源导通电阻 | 0.05 Ω | 0.05 Ω | 0.05 Ω | 0.05 Ω | 0.05 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e3 | e0 | e3 | e3 | e0 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 80 A | 80 A | 80 A | 80 A | 80 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子面层 | Matte Tin (Sn) - with Nickel (Ni) barrier | TIN LEAD | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier | TIN LEAD |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | 30 | 30 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| 最大漏极电流 (Abs) (ID) | 26 A | - | 26 A | 26 A | - |
| 最高工作温度 | 175 °C | - | 175 °C | 175 °C | - |
| 最大功率耗散 (Abs) | 79 W | - | 79 W | 79 W | - |
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