Schottky Barrier Diodes (SBD)
MA3S795
Silicon epitaxial planar type
0.28
±
0.05
For switching circuits
I
Features
•
Extra-small SS-mini type 3-pin package, allowing high-density
mounting
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
F
) (Low V
F
type of MA3X704A)
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
rr
)
1.60
−
0.03
0.80
0.80
0.51
0.51
0.80
1.60
±
0.1
0.80
±
0.05
Unit : mm
1
+
0.05
3
2
0.28
±
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
For switching circuits
Forward current (DC)
Peak forward current
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F
I
FM
T
j
T
stg
Rating
30
30
30
150
125
−55
to
+125
Unit
V
V
mA
mA
°C
°C
0.60
−
0.03
0.44
0.44
+
0.05
0.88
−
0.03
1 : Anode
2 : NC
3 : Cathode
SS-Mini Type Package(3-pin)
Marking Symbol: M2M
Internal Connection
1
3
2
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
C
t
t
rr
η
V
R
= 30 V
I
F
= 1 mA
I
F
= 30 mA
V
R
= 1 V, f = 1 MHz
I
F
= I
R
= 10 mA
I
rr
= 1 mA, R
L
= 100
Ω
V
in
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kΩ, C
L
= 10 pF
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
Conditions
Min
Typ
Max
30
0.3
1
0.12
−
0.02
+
0.05
+
0.05
0.28
±
0.05
Unit
µA
V
V
pF
ns
1.5
1
Detection efficiency
65
%
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1
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