Data Sheet
Schottky Barrier Diode
RB162L-60
Applications
General rectification
Dimensions
(Unit : mm)
Land
size figure
(Unit : mm)
2.0
2.0
Features
1) Small power mold type. (PMDS)
2) High switching speed
3) Low forward voltage
PMDS
Construction
Silicon epitaxial planer
Structure
Taping
dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3
4.2
5.5±0.05
1.75±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute
maximum ratings
(Tl=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
Electrical
characteristics
(Tj=25C)
Parameter
Forward voltage
Reverse current
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Conditions
D0.5
Direct voltage
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
5.3±0.1
0.05
9.5±0.1
Limits
60
60
1.0
20
150
40
to
150
12±0.2
Unit
V
V
A
A
C
C
Symbol
V
F
I
R
Conditions
I
F
=1.0A
V
R
=60V
Min.
-
-
Typ.
0.54
4
Max.
0.65
100
Unit
V
μA
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1/3
2011.04 - Rev.A
RB162L-60
Data Sheet
1
Tj=150C
100000
Tj=150C
Tj=125C
10000
1000
100
10
1
0.1
Tj=125C
1000
f=1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
FORWARD CURRENT : I
F
(A)
Tj=125C
REVERSE CURRENT : I
R
(A)
100
0.1
Tj=25C
Tj=25C
Tj=25C
10
0.01
0
100
200
300
400
500
600
700
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1
0
10
20
30
40
50
60
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
550
FORWARD VOLTAGE : V
F
(mV)
100
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Tj=25C
I
F
=1.0A
n=20pcs
Tj=25C
V
R
=60V
n=20pcs
200
190
180
170
160
150
140
130
120
110
AVE : 168.0pF
Tj=25C
f=1MHz
V
R
=0V
n=10pcs
540
530
520
510
500
490
480
V
F
DISPERSION MAP
AVE : 515.2mV
REVERSE CURRENT : I
R
(A)
10
AVE : 6.0A
1
I
R
DISPERSION MAP
100
Ct DISPERSION MAP
120
REVERSE RECOVERY TIME : trr(ns)
30
Ifsm
1cyc
100
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
100
80
60
8.3ms
20
Tj=25C
I
F
=0.1A
I
R
=0.1A
Irr=0.1*I
R
n=10pcs
Ability
10
Ratings
Ifsm
8.3ms
8.3ms
AVE : 80.8A
40
20
0
I
FSM
DISRESION MAP
10
AVE : 11.6ns
1cyc
0
trr DISPERSION MAP
1
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1000
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Ifsm
30
25
20
15
10
5
AVE : 5.0kV
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
1000
No break at 30kV
Rth(j-a)
On glass-epoxy substrade
2
soldering land 2mm
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
Ability
100
t
100
Rth(j-l)
10
Rth(j-a)
On glass-epoxy substrade
10
Ratings
1
soldering land 10mm
2
1
1
10
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
100
0
C=200pF
R=0
C=100pF
R=1.5k
0.1
0.001
0.01
0.1
1
10
100
1000
ESD DISPERSION MAP
TIME : t(s)
Rth-t CHARACTERISTICS
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2/3
2011.04 - Rev.A
RB162L-60
Data Sheet
0A
0V
t
Io
V
R
1.8
1.6
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
D=t/T
V
R
=30V
Tj=150C
On glass-epoxy
substrate soldering land 2mm
T
D=0.8
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
half sin wave
D=0.5
D=0.8
D.C.
V
R
D=t/T
V
R
=30V
T
Tj=150C
On glass-epoxy
substrate soldering land 10mm
t
0A
0V
Io
0A
0V
t
1.8
Io
V
R
T
D=t/T
V
R
=30V
Tj=150C
D.C.
1.6
1.4
1.2
1
0.8
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
30
60
D.C.
D=0.5
D=0.8
half sin wave
0.6
0.4
0.2
0
D=0.5
half sin wave
90
120
150
0
30
60
90
120
150
0
30
60
90
120
150
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
1.4
D.C.
1.2
D=0.8
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
CASE TEMPARATURE : Tl(C)
Derating Curve"(Io-Tl)
FORWARD POWER
DISSIPATION : Pf(W)
1
D=0.5
0.8
half sin wave
0.6
0.4
0.2
0
0
0.3
0.6
0.9
1.2
1.5
1.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.A
Notice
Notes
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