1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
1000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than
1.0ps from 0 V to BV min
● Moisture sensitivity level: level 1, per J-STD-020
● AEC-Q101 qualified available:
ordering code with suffix “H”
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPSM
T
J MAX
Package
Configuration
VALUE
8.55 – 85.5
9.5 - 105
9.5 - 105
1000
175
UNIT
V
V
V
W
°C
DO-214AA (SMB)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.11 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
(1)
10/1000µs waveform
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
for Uni-directional only
(2)
Forward Voltage @ I
F
=50A for Uni-directional only
Junction temperature
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
VALUE
1000
5
100
3.5 / 5.0
-55 to +175
-55 to +175
UNIT
W
W
A
V
°C
°C
T
STG
Storage temperature
Notes:
1.
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
2.
V
F
=3.5V for Devices of V
BR
≦50V
and V
F
=5.0V Max. for Devices V
BR
>50V
Devices for Bipolar Applications
1.
For Bidirectional use CA suffix
1
Version: H1902
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
TYP
20
100
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Voltage
V
BR
@I
T
(V)
(Note 1)
Test
Current
I
T
(mA)
Maximum
Maximum Peak
Stand-Off
Reverse
impulse
Voltage
Leakage
Current
V
WM
@V
WM
I
PP
(V)
(µA)
(A)
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
Device
Device
Marking
Code
Min.
1KSMB10A
1KSMB10CA
1KSMB11A
1KSMB11CA
1KSMB12A
1KSMB12CA
1KSMB13A
1KSMB13CA
1KSMB15A
1KSMB15CA
1KSMB16A
1KSMB16CA
1KSMB18A
1KSMB18CA
1KSMB20A
1KSMB20CA
1KSMB22A
1KSMB22CA
1KSMB24A
1KSMB24CA
1KSMB27A
1KSMB27CA
1KSMB30A
1KSMB30CA
1KSMB33A
1KSMB33CA
1KSMB36A
1KSMB36CA
1KSMB39A
1KSMB39CA
1KSMB43A
1KSMB43CA
1KSMB47A
1KSMB47CA
1KSMB51A
1KSMB51CA
1KSMB56A
1KSMB56CA
1KSMB62A
1KSMB62CA
1KSMB68A
1KSMB68CA
A10E
N10E
A10F
N10F
A10G
N10G
A10H
N10H
A10I
N10I
A10J
N10J
A10K
N10K
A10L
N10L
A10M
N10M
A10N
N10N
A10O
N10O
A10P
N10P
A10Q
N10Q
A10R
N10R
A10S
N10S
A10T
N10T
A10U
N10U
A10V
N10V
A10W
N10W
A10X
N10X
A10Y
N10Y
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
Max.
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
10.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
69.0
64.1
59.9
54.9
47.2
44.4
39.2
36.1
32.7
30.1
26.7
24.2
21.9
20.0
18.6
16.9
15.4
14.3
13.0
11.8
10.9
14.5
15.6
16.7
18.2
21.2
22.5
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
Version: H1902
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
voltage
V
BR
@I
T
(V)
(Note 1)
Test
current
I
T
(mA)
Maximum
Maximum
Stand-Off
Reverse
peak impulse
Voltage
leakage
current
V
WM
@V
WM
I
PP
(V)
(µA)
(A)
Maximum
clamping
voltage
V
C
@I
PP
(V)
Device
Device
Marking
Code
Min.
Max.
1.0
1.0
1.0
1.0
9.7
8.8
8.0
7.3
103
113
125
137
1KSMB75A
A10Z
71.3
78.8
1.0
64.1
1KSMB75CA
N10Z
1KSMB82A
B10A
77.9
86.1
1.0
70.1
1KSMB82CA
O10A
1KSMB91A
B10B
86.5
95.5
1.0
77.8
1KSMB91CA
O10B
1KSMB100A
B10C
95
105
1.0
85.5
1KSMB100CA
O10C
Notes:
1.
V
BR
measure after I
T
applied for 30ms, I
T
=square wave pulse or equivalent.
2.
All terms and symbols are consistent with ANSI/IEEE C62.35.
3.
For Bidirectional use CA suffix
ORDERING INFORMATION
ORDERING CODE
(Note 1,2,3)
1KSMBxxxxHR5G
1KSMBxxxxHR4G
1KSMBxxxxHM4G
1KSMBxxxx R5G
1KSMBxxxx R4G
1KSMBxxxx M4G
1KSMBxxxxHR5
1KSMBxxxxHR4
1KSMBxxxxHM4
1KSMBxxxx R5
1KSMBxxxx R4
1KSMBxxxx M4
PACKAGE
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
STATUS
Active
NRND
Active
Active
NRND
Active
Active
NRND
Active
Active
NRND
Active
Note 1:
"xxxx" defines voltage from 10V
(1KSMB10A) to 100V (1KSMB100CA)
Note 2:
"H" means AEC-Q101 qualified
Note 3:
"G" means green compound (halogen free)
3
Version: H1902
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Peak Pulse Power Rating Curve
Fig2. Pulse Derating Curve
100
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
125
P
PPM
, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
100
75
10
50
25
1
1
10
100
1000
0
0
25
50
75
100
125
150
175
200
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig3. Clamping Power Pulse Waveform
IFSM, PEAK FORWARD SURGE CURRENT (A)
Fig4. Maximum Non-Repetitive Forward Surge
Current Unidirectional Only
100
8.3ms Single Half Sine Wave
140
I
PPM
, PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
0.5
1
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Rise time tr=10μs to 100%
Peak value
I
PPM
Half value-I
PPM
/2
10/1000μs, waveform
td
1.5
2
2.5
3
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
PERCENT OF RATED PEAK (ms)
t, TIME REVERSE VOLTAGE (%)
4
Version: H1902
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
Fig5. Typical Junction Capacitance
CJ, JUNCTION CAPACITANCE (pF)
A
10000
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
MEASURED at
STAND-OFF
VOLTAGE,Vwm
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
5
Version: H1902
传感器
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