DATASHEET
Radiation Tolerant 30V 32-Channel Analog Multiplexer
ISL73841SEH
The
ISL73841SEH
is a radiation tolerant, 32-channel high ESD
protected multiplexer that is fabricated using Intersil’s
proprietary P6SOI (Silicon On Insulator) process technology. It
operates with a dual supply voltage ranging from ±10.8V to
±16.5V. It has a 5-bit address plus an enable pin that can be
driven with adjustable logic thresholds to conveniently select 1
of 32 available channels. An inactive channel is separated
from an active channel by a high impedance, which inhibits
any interaction between them.
The ISL73841SEH low r
ON
allows for improved signal integrity
and reduced power losses. The ISL73841SEH is also designed
for cold sparing making it excellent for high reliability
applications that have redundancy requirements. It is
designed to provide a high impedance to the analog source in
a powered off condition, making it easy to add additional
backup devices without loading signal sources. The
ISL73841SEH also incorporates input analog overvoltage
protection, which will disable the switch to protect downstream
devices.
The ISL73841SEH is available in a 48 Ld CQFP or die form and
operates across the extended temperature range of -55°C to
+125°C.
There is also a 16-channel version available offered in a 28 Ld
CDFP, please refer to the
ISL73840SEH
datasheet for more
information. For a list of differences please refer to
Table 1 on
page 3.
Features
• DLA SMD#
5962-15220
• Fabricated using P6SOI process technology
• ESD protection 8kV (HBM)
• Rail-to-rail operation
• Overvoltage protection
• Low r
ON
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <500Ω (typical)
• Flexible split rail operation
- Positive supply above GND (V
+
) . . . . . . . +10.8V to +16.5V
- Negative supply below GND (V
-
) . . . . . . . . -10.8V to -16.5V
• Adjustable logic threshold control with VREF pin
• Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V
• Analog overvoltage range (from ground) . . . . . . . . . . . . .±35V
• Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)
• Transition times (t
R
, t
F
) . . . . . . . . . . . . . . . . . . . 500ns (typical)
• Break-before-make switching
• Grounded metal lid (internally connected)
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- Low dose rate (0.01rad(Si)/s) . . . . . 50krad(Si) (see Note)
- SEB LET
TH
. . . . . . . . . . . . . . . . . . . . . . . . .86.4MeV• cm
2
/mg
NOTE: Product capability established by initial characterization. All
subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)
wafer-by-wafer.
ISL73841SEHM
600
500
r
DS(ON)
(Ω)
400 +25°C
300
200
100
-55°C
0
-20
-15
-10 -5.0
0
5.0
10
SWITCH INPUT VOLTAGE (V)
15
20
+125°C
IN01
IN02
IN03
.
.
.
IN32
OUT
ADC
5
ADDRESS
EN
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. r
DS(ON)
vs POWER SUPPLY ACROSS SWITCH INPUT
COMMON-MODE VOLTAGE AT +25°C
May 31, 2016
FN8846.1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL73841SEH
Table of Contents
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications (±15V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Specifications (±12V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Typical Performance Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Post Low Dose Rate Radiation Characteristics (V± = ±15V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Post Low Dose Rate Radiation Characteristics (V± = ±12V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power-Up Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VREF and Logic Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
19
19
19
ISL73841SEH vs ISL73840SEH. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Die Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Interface Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Assembly Related Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Additional Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Weight of Packaged Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lid Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
20
20
20
Metalization Mask Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
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ISL73841SEH
Ordering Information
ORDERING NUMBER
(Note
2)
5962L1522002VXC
N/A
5962L1522002V9A
N/A
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
PART NUMBER
ISL73841SEHVF (Note
1)
ISL73841SEHF/PROTO (Note
1)
ISL73841SEHVX
ISL73841SEHX/SAMPLE
TEMP RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(RoHS Compliant)
48 LD CQFP
48 LD CQFP
DIE
DIE
R48.A
R48.A
N/A
N/A
PKG.
DWG. #
TABLE 1. TABLE OF DIFFERENCES
SPECIFICATION
Number of Channels
Supply Current (I+/I-)
Output Leakage (+125°C)
ISL73840SEH
16
350µA (Maximum)
60nA (Maximum)
ISL73841SEH
32
400µA (Maximum)
120nA (Maximum)
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ISL73841SEH
Pin Configuration
ISL73841SEH
(48 LD CQFP)
TOP VIEW
IN13
IN14
IN15
IN16
NC
OUT
NC
NC
IN32
IN31
IN30
IN29
6 5 4 3 2 1 48 47 46 45 44 43
42
41
40
39
38
37
LID
36
35
34
33
32
31
18
19 20 21 22 23 24 25 26 27 28 29 30
7
8
9
10
11
12
13
14
15
16
17
IN12
IN11
IN10
IN9
IN8
IN7
IN6
IN5
IN4
IN3
IN2
IN1
IN28
IN27
IN26
IN25
IN24
IN23
IN22
IN21
IN20
IN19
IN18
IN17
Pin Descriptions
PIN NAME
NC
OUT
V
+
V
-
INx
PIN NUMBER
2, 26, 27, 47, 48
1
19
30
DESCRIPTION
Not connected, no internal connection.
Output for multiplexer
Positive power supply
Negative power supply
3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, Inputs for multiplexer
14, 15, 16, 17, 18,
31, 32, 33, 34, 35, 36, 37, 38,
39, 40, 41, 42, 43, 44, 45, 46
21, 22, 23, 24, 25
28
20
29
-
Address lines for multiplexer
Enable control for multiplexer (active low)
Reference voltage used to set logic thresholds
Ground
Package Lid is internally connected to GND (Pin 29)
Ax
EN
VREF
GND
LID
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4
V
+
VREF
A0
A1
A2
A3
A4
NC
NC
EN
GND
V
-
FN8846.1
May 31, 2016
ISL73841SEH
Absolute Maximum Ratings
Positive Supply Voltage above GND (V
+
) (Note
5).
. . . . . . . . . . . . . . . . +20V
Negative Supply Voltage below GND (V
-
) (Note
5)
. . . . . . . . . . . . . . . . .-20V
Maximum Supply Voltage Differential (V
+
to V
-
) (Note
5)
. . . . . . . . . . . 40V
Analog Input Voltage (INx)
From GND (Note
5)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Digital Input Voltage Range (EN, Ax) . . . . . . . . . . . . . . . . . . . . . . . . GND to V
+
VREF to GND (Note
5)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5V
ESD Tolerance
Human Body Model (Tested per MIL-STD-883 TM 3015) . . . . . . . . . 8kV
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 250V
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 250V
Thermal Information
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
48 Ld CQFP (Notes
3, 4)
. . . . . . . . . . . . . . .
50
2
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Positive Supply Voltage Above GND (V
+
) . . . . . . . . . . . . . +10.8V to +16.5V
Negative Supply Voltage Below GND (V
-
) . . . . . . . . . . . . . . .-10.8V to -16.5V
Supply Voltage Differential (V
+
to V
-
) . . . . . . . . . . . . . . . . . . . . 21.6V to 33V
VREF to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
JC
, the “case temp” location is the center of the package underside.
5. Tested in a heavy ion environment at LET = 86.3MeV
•
cm
2
/mg at +125°C.
V
+
= 15V, V
-
= -15V, V
AH
= 4.0V, V
AL
= 0.8V, V
REF
= V
EN
= 5.0V, T
A
= +25°C, unless otherwise noted.
Boldface limits apply across the operating temperature range, -55°C to +125°C or across a total ionizing dose of 50krad(Si) with exposure at a low dose rate
of <10mrad(Si)/s.
SYMBOL
V
S
r
ON
PARAMETER
Analog Input Signal Range
Channel ON-Resistance
V± = ±15.0V, ±16.5V
I
OUT
= -1mA, V
IN
= +5V, -5V
V± = ±15.0V, ±16.5V
I
OUT
= -1mA, V
IN
= V
+
, V
-
Δr
ON
R
FLAT(ON)
I
S(OFF)
r
ON
Match Between Channels
ON-Resistance Flatness
Switch Off Leakage
V
IN
= +5V, -5V; I
OUT
= -1mA
V
IN
= +5V, -5V
V
IN
= V
+
- 5V, V± = ±16.5V
All unused inputs are tied to V
-
+ 5V
Post radiation
V
IN
= V
-
+ 5V, V± = ±16.5V
All other inputs = V
+
- 5V
T
A
= +25°C, -55°C
T
A
= +125°C
Post radiation
I
S(OFF) POWER OFF
Switch Off Leakage with Device
Powered Off
V
IN
= +25V, V± = V
EN
= V
A
= V
REF
= 0V
T
A
= +25°C, V± = 0V
T
A
= -55°C, +125°C
Post radiation
V
IN
= -25V, V± = V
EN
= V
A
= V
REF
= 0V
T
A
= +25°C, V± = 0V
T
A
= -55°C, +125°C
Post radiation
TEST CONDITIONS
MIN
(Note
6)
V
-
-
-
-
-
-10
-100
-10
TYP
-
-
-
10
-
-
-
-
MAX
(Note
6)
V
+
500
700
20
25
10
100
10
UNIT
V
Ω
Ω
Ω
Ω
nA
nA
nA
Electrical Specifications (±15V)
-20
-100
-10
-10
-100
-10
-80
-100
-
-
-
-
-
-
-
-
20
100
10
80
100
10
10
100
nA
nA
nA
nA
nA
nA
nA
nA
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