IRFR420, IRFU420
Data Sheet
January 2002
2.5A, 500V, 3.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17405.
Features
• 2.5A, 500V
• r
DS(ON)
= 3.000
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRFR420
IRFU420
PACKAGE
TO-252AA
TO-251AA
BRAND
IFR420
IFU420
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in the tape and reel, i.e., IRFR420T.
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN (FLANGE)
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFR420, IRFU420 Rev. B
IRFR420, IRFU420
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR420, IRFU420
500
500
2.5
1.6
8
±
20
50
0.4
210
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the Drain
Lead, 6.0mm (0.25in)
From Package to Center
of Die
Measured From the
Source Lead, 6.0mm
(0.25in) From Package to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= 250
µ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
µ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 1.3A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
10V, I
D
= 2.0A (Figure 12)
V
DD
=
250V, I
D
≈
2.5A, R
GS
= 18
Ω
, R
L
= 100
Ω,
V
GS
= 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 2.5A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
MIN
500
2.0
-
-
2.5
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
2.9
2.2
10
12
28
12
13
2.2
6.8
350
54
9.6
4.5
MAX
-
4.0
25
250
-
±
100
3.0
-
15
18
42
18
19
3.3
10
-
-
-
-
UNITS
V
V
µ
A
µ
A
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θ
JC
R
θ
JA
Mounted on FR-4 Board with Minimum Mounting
pad
-
-
-
-
2.5
110
o
C/W
o
C/W
©2002 Fairchild Semiconductor Corporation
IRFR420, IRFU420 Rev. B
IRFR420, IRFU420
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction
Rectifier
G
D
MIN
-
-
TYP
-
-
MAX
2.5
8
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 2.5A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 2.5A, dI
SD
/dt = 100A/
µ
s
T
J
= 25
o
C, I
SD
= 2.5A, dI
SD
/dt = 100A/
µ
s
-
130
0.57
-
270
1.2
1.6
540
2.3
V
ns
µ
C
2. Pulse test: pulse width
≤
300
µ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 60mH, R
G
= 25Ω, peak I
AS
= 2.5A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
2.5
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
0
0
50
100
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
Z
θJC
, THERMAL IMPEDANCE
0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
10
-2
10
-5
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
0.1
10
-3
10
-2
t
1
, RECTANGULAR PULSE DURATION (s)
1
10
t
1
t
2
10
-4
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFR420, IRFU420 Rev. B
IRFR420, IRFU420
Typical Performance Curves
10
Unless Otherwise Specified
(Continued)
5
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 6.0V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
100µs
4
3
V
GS
= 5.5V
2
V
GS
= 5.0V
1
V
GS
= 4.0V
V
GS
= 4.5V
150
200
250
1.0
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
T
J
= MAX RATED
SINGLE PULSE
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
0.1
-1
-1000
0
0
50
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
4
V
GS
= 10V
V
GS
= 6.0V
I
D
, DRAIN CURRENT (A)
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
1
3
V
GS
= 5.5V
2
V
GS
= 5.0V
V
GS
4.0V
0
0
8
12
16
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
20
T
J
= 150
o
C
0.1
T
J
= 25
o
C
1
10
-2
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
10
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (S)
8
V
GS
= 10V
6
2.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 1.3A
1.8
4
V
GS
= 20V
1.2
2
0.6
0
0
0
2
4
6
I
D
, DRAIN CURRENT (A)
8
10
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
IRFR420, IRFU420 Rev. B
IRFR420, IRFU420
Typical Performance Curves
1.25
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.15
C, CAPACITANCE (nF)
600
C
ISS
450
C
OSS
300
Unless Otherwise Specified
(Continued)
750
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
1.05
0.95
0.85
150
C
RSS
0.75
-40
0
40
80
120
160
0
1
2
T
J
, JUNCTION TEMPERATURE (
o
C)
5
10
2
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
2
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
g
fs
, TRANSCONDUCTANCE (S)
3.2
T
J
= 25
o
C
I
SD
, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 0V
10
2.4
T
J
= 150
o
C
1.6
T
J
= 150
o
C
1
T
J
= 25
o
C
0.8
0
0.1
0
0.8
1.6
2.4
I
D
, DRAIN CURRENT (A)
3.2
4.0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
D
= 2.5A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
V
GS
, GATE TO SOURCE (V)
16
12
8
4
0
0
4
8
12
16
20
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFR420, IRFU420 Rev. B
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