电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N6281AHE3/54

产品描述DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor
产品类别分立半导体    二极管   
文件大小104KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

1N6281AHE3/54概述

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor

1N6281AHE3/54规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性HIGH RELIABILITY
最大击穿电压28.4 V
最小击穿电压25.7 V
击穿电压标称值27.05 V
外壳连接ISOLATED
最大钳位电压37.5 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT APPLICABLE
极性UNIDIRECTIONAL
最大功率耗散6.5 W
认证状态Not Qualified
最大重复峰值反向电压23.1 V
表面贴装NO
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT APPLICABLE
Base Number Matches1

文档预览

下载PDF文档
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Note:
• 1.5KE250 ~ 1.5KE540A and 1.5KE250C ~ 1.5KE440CA for
commercial grade only
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 540 V
6.8 V to 440 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types,
(e.g. 1.5KE440CA).
use
C
or
CA
suffix
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 100 A for uni-directional only
(3)
Operating junction and storage temperature range
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for 1.5KE220 (A) and below; V
F
= 5.0 V for 1.5KE250(A) and above
Document Number: 88301
Revision: 22-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

1N6281AHE3/54相似产品对比

1N6281AHE3/54 1N6276AHE3/54
描述 DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
包装说明 O-PALF-W2 O-PALF-W2
针数 2 2
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY
最大击穿电压 28.4 V 16.8 V
最小击穿电压 25.7 V 15.2 V
击穿电压标称值 27.05 V 16 V
外壳连接 ISOLATED ISOLATED
最大钳位电压 37.5 V 22.5 V
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3
最大非重复峰值反向功率耗散 1500 W 1500 W
元件数量 1 1
端子数量 2 2
最高工作温度 175 °C 175 °C
最低工作温度 -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT APPLICABLE NOT APPLICABLE
极性 UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 6.5 W 6.5 W
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 23.1 V 13.6 V
表面贴装 NO NO
技术 AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 WIRE WIRE
端子位置 AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT APPLICABLE NOT APPLICABLE
Base Number Matches 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2362  2768  666  1331  1802  52  13  35  12  39 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved