Features
•
Operating Voltage: 3.3V
•
Access Time:
•
•
•
•
•
•
•
•
•
•
– 15 ns (AT60142F)
Very Low Power Consumption
– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
Wide Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 µm Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 4000V
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
Description
The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns or better over the full military temperature range. The high stability of the 6T cell
provides excellent protection against soft errors due to noise.
The AT60142F is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
AT60142F
Rev. 4408G–AERO–04/09
1
AT60142F
Block Diagram
Pin Configuration
A0
A1
A2
A3
A4
CS
I/O1
I/O2
Vcc
GND
I/O3
I/O4
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE
I/O8
I/O7
GND
Vcc
I/O6
I/O5
A14
A13
A12
A11
A10
N/C
36 - pin -Flatpack - 500 Mils
2
4408G–AERO–04/09
Pin Description
Table 1.
Pin Names
Name
A0 - A18
I/O1 - I/O8
CS
WE
OE
Vcc
GND
Description
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power Supply
Ground
Table 2.
Truth Table
(1)
CS
H
L
L
L
Note:
WE
X
H
L
H
OE
X
L
X
H
Inputs/Outputs
Z
Data Out
Data In
Z
Mode
Deselect/
Power-down
Read
Write
Output Disable
1. L=low, H=high, X= L or H, Z=high impedance.
3
AT60142F
4408G–AERO–04/09
AT60142F
Electrical Characteristics
Absolute Maximum Ratings*
Supply Voltage to GND Potential: ....................... -0.5V + 4.6V
Voltage range on any input: ...................... GND -0.5V to 4.6V
Voltage range on any ouput: ..................... GND -0.5V to 4.6V
Storage Temperature: ................................... -65⋅C to + 150⋅C
Output Current from Output Pins: ................................ 20 mA
Electrostatic Discharge Voltage: ............................... > 4000V
(MIL STD 883D Method 3015.3)
*NOTE:
Stresses beyond those listed under "Abso-
lute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions
beyond those indicated in the operational
sections of this specification is not implied.
Exposure between recommended DC
operating and absolute maximum rating
conditions for extended periods may
affect device reliability.
Military Operating Range
Operating Voltage
Military
3.3
+
0.3V
Operating Temperature
-55°C to + 125°C
Recommended DC Operating Conditions
Parameter
Vcc
GND
V
IL
V
IH
Description
Supply voltage
Ground
Input low voltage
Input high voltage
Min
3
0.0
GND - 0.3
2.2
Typ
3.3
0.0
0.0
–
Max
3.6
0.0
0.8
V
CC
+ 0.3
Unit
V
V
V
V
Capacitance
Parameter
C
in(1)
C
out(1)
Note:
Description
Input capacitance
Output capacitance
Min
–
–
Typ
–
–
Max
12
12
Unit
pF
pF
1. Guaranteed but not tested.
4
4408G–AERO–04/09
DC Parameters
Parameter
IIX
(1)
IOZ
(1)
VOL
(2)
VOH
(3)
1.
Description
Input leakage current
Output leakage
current
Output low voltage
Output high voltage
Minimum
-1
-1
–
2.4
Typical
–
–
–
–
Maximum
1
1
0.4
–
Unit
μA
μA
V
V
GND < V
IN
< V
CC
, GND < V
OUT
< V
CC
Output Disabled.
2.
3.
V
CC
min. I
OL
= 8 mA
V
CC
min. I
OH
= -4 mA.
Consumption
Symbol
I
CCSB (1)
I
CCSB1 (2)
Description
Standby Supply
Current
Standby Supply
Current
TAVAV/TAVAW
Test Condition
–
AT60142F-15
2
Unit
mA
Value
max
–
15 ns
25 ns
50 ns
1 µs
15 ns
25 ns
50 ns
1 µs
1.8
180
150
75
10
150
130
120
100
mA
max
I
CCOP(3)
Read
Dynamic Operating
Current
mA
max
I
CCOP(4)
Write
Dynamic Operating
Current
mA
max
1.
2.
3.
4.
CS
>V
IH
CS
>
V
CC
- 0.3V
F = 1/
TAVAV
, I
out
= 0 mA, WE = OE = V
IH
, V
IN
= GND/V
CC
, V
CC
max.
F = 1/
TAVAW
, I
out
= 0 mA, WE = V
IL
, OE = V
IH
, V
IN
= GND/V
CC
, V
CC
max.
5
AT60142F
4408G–AERO–04/09
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