FLM1011-15F
X,Ku-Band Internally Matched FET
FEATURES
・High
Output Power: P1dB=42.0dBm(Typ.)
・High
Gain: G1dB=7.0dB(Typ.)
・High
PAE:
ηadd=31%(Typ.)
・Broad
Band: 10.7~11.7GHz
・Impedance
Matched Zin/Zout = 50Ω
・Hermetically
Sealed Package
DESCRIPTION
The FLM1011-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
57.7
-65 to +175
175
o
Unit
V
V
W
C
C
o
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
°
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
V
DS
I
GF
I
GR
R
G
=50Ω
R
G
=50Ω
Condition
Limit
Unit
V
mA
mA
≤
10
≤
16.7
≥
-3.62
Limit
Typ.
7.2
4500
-1.5
-
42.0
7.0
4.0
31
-
2.3
-
-45
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
η
add
∆G
R
th
∆T
ch
IM
3
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=4.55A
V
DS
=5V, I
DS
=300mA
I
GS
=-300uA
V
DS
=10V
f=10.7 - 11.7 GHz
I
DS
=0.5Idss (typ)
Zs=Z
L
=50
Ω
Min.
-
-
-0.5
-5.0
41.0
6.0
-
-
-
-
-
-42
Max.
10.8
-
-3.0
-
-
-
5.0
-
1.2
2.6
100
-
Unit
A
mS
V
V
dBm
dB
A
%
dB
o
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
3rd Order Intermodulation
Distortion
Channel to Case
10V x Idsr x Rth
f=11.7GHz,
∆
f=10MHz, 2-Tone Test
Pout=30.0dBm S.C.L.
C/W
o
C
dBc
CASE STYLE: IB
ESD
Edition 1.2
September 2004
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Class
III
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
Ω
)
1
FLM1011-15F
X,Ku-Band Internally Matched FET
POWER DERATING CURVE
60
Output Power [dBm]
Total Power Dissipation [W]
OUTPUT POWER , POWER ADDED EFFICIENCY
v.s. INPUT POWER
Vds=10V, Ids=0.5Idss Freq=11.2GHz
44
42
40
38
36
34
32
30
Pout
70
60
50
40
PAE
50
40
30
20
10
0
0
50
100
150
200
Case Temperature [
o
C]
30
20
10
0
22
24
26
28
30
32
34
36
38
38
Input Power [dBm]
OUTPUT POWER v.s. FREQUENCY
Vds=10V, Ids=0.5Idss
44
Pin=36dBm
-40
IMD v.s. OUTPUT POWER (S.C.L.)
Vds=10V, Ids=3.6A
f1=11.70GHz, f2=11.71GHz, 2-tone test
42
Intermodulation Distortion [dBc]
-44
-48
Output Power [dBm]
40
38
36
Pin=34dBm
Pin=30dBm
P1dB
IM3
-52
-56
Pin=26dBm
34
32
10.5
10.7
10.9
11.1
11.3
11.5
11.7
11.9
IM5
-60
-64
Frequency [GHz]
25
26
27
28
29
30
31
32
33
34
Output Power (S.C.L.) [dBm]
2
Power Added Efficiency [%]
FLM1011-15F
X,Ku-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do
not put these products into the mouth.
・Do
not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe
government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
5
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