Data Sheet
PT7C5005AL series
Crystal Oscillator
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Features
•
•
•
•
•
•
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High-frequency operation(PT7C5005AL)
Capacitors C
G
and C
D
built-in
Inverter amplifier feedback resistor built-in
2.25 to 3.6Voperating supply voltage range
CMOS output duty level
Standby function (oscillator stops)
Power-save pull-up resistor built-in
3rd-harmonic oscillation
Output
3-state
function(High
impedance
in
standby mode, oscillator stops)
Drive capability: 8mA(V
DD
=2.7V)
Die form and Lead free SOIC-8
Description
The PT7C5005AL series are crystal oscillator
module ICs.
PT7C5005AL are comprised of high-frequency,
low current consumption oscillator and output buffer
circuits. Highly accurate thin-film feedback resistors
and high-frequency capacitors are built-in in it,
eliminating the need for external components to make
a stable 3
rd
-harmonic oscillator.
Ordering Information
Part no.
PT7C5005Alx-1DE
PT7C5005Alx-2DE
PT7C5005ALxWE
Package type
Die form
Die form
Lead free SOIC-8
Application
•
Used for crystal oscillator
Note:
1.Below is the detailed definition of part no.
2. “-1” & “-2” show the different die thickness; “-1”:
265±25µm; “-2”: 220±20µm.
PT7C
PT7C
5005
5014
A
A
L
L
A
1
Device Type
Clock Series
XO 5005 Series
Series Type
Gm ratio
Suffix
A
B
C
D
E
Gm ratio(%)
f
O
1.5 f
O
1.5 f
O
f
O
f
O
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Data Sheet
PT7C5005AL series
Crystal Oscillator
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Series Configuration
Gm
Recommended operating frequency range
1
[MHz]
Built-in capacitance [pF]
Part No.
Rf [kΩ]
ratio
V
DD
=2.25 to 2.75V
V
DD
=2.7 to 3.6V
C
G
C
D
PT7C5005ALA
60 to 70
70 to 100
1.0
8
10
2.2
PT7C5005ALB
-
90 to 110
1.5
6
6
3.3
PT7C5005ALC
-
100 to 150
1.5
3
3
3.3
PT7C5005ALD
45 to 60
60 to 80
1.0
8
10
3.5
PT7C5005ALE
30 to 45
40 to 60
1.0
8
15
5.6
Note1:
The recommended operating frequency is a yardstick value derived from the crystal used for PTI characteristics
authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to
crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
Block Diagram
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
fo output frequency
High impedance
Oscillator
Normal operation
Power-save Pull-up Resistance
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the
pull-up resistance becomes large to reduce the current consumption during standby.
PT0254(05/07)
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Data Sheet
PT7C5005AL series
Crystal Oscillator
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Pad/Pin Configuration
Sensor
INHN
VDD
Die No.
XT
XTN
Q
GND
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
112.80
542.00
159.00
sensor
-50
850.00
GND
184.20
INHN
184.20
687.10
VDD
815.20
XT
184.20
497.10
Q
815.20
XTN
184.20
302.80
Note:
Substrate is connected to GND or VDD or floating.
Die Size:
950µm*800µm (Including scribe line size.)
Die Thickness:
PT7C5005ALx-1: 265µm±25µm; PT7C5005ALx-2: 220µm±20µm
Pad Size:
100µm*100µm
Pad/Pin Description
Sym.
INHN
XT
XTN
GND
Q
NC
VDD
Type
I
I
O
P
O
-
P
Description
Output state control input. High impedance when LOW. Power-saving pull-up resistor built
in.
Amplifier input.
Crystal oscillator connected between XT and XTN
Amplifier output.
Ground
Output. Output frequency, high impedance is standby mode.
No connection.
Supply voltage
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Data Sheet
PT7C5005AL series
Crystal Oscillator
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Maximum Ratings
Storage Temperature ................................................................................- 65oC to +150oC
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +7.0V
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V
DC Output............................................................... -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................... 25mA
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
(GND=0V, unless otherwise noted.)
Sym.
Parameter
Series
PT7C5005ALA/D/E
V
DD
Supply voltage
PT7C5005ALx
PT7C5005ALx
V
IN
T
A
Input voltage
Operating temperature
All series
All series
Conditions
f
≤
70MHz, CL
≤
30pF
f
≤
125MHz, CL
≤
15pF
f
≤
125MHz, CL
≤
30pF
-
-
Min
2.25
2.7
3.0
0
-20
Typ
-
-
-
-
-
Max
2.75
3.6
3.6
V
DD
+80
V
°C
V
Unit
PT0254(05/07)
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Data Sheet
PT7C5005AL series
Crystal Oscillator
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DC Electrical Characteristics
PT7C5005ALx (V
DD
= 2.7 to 3.6V, T
A
= -20 to 80°C, unless otherwise noted.)
Symbol
V
OH
V
OL
V
IH
V
IL
I
Z
Parameter
HIGH-level
output voltage
LOW-level
output voltage
HIGH-level
input voltage
LOW-level input
voltage
Output leakage
current
Current
consumption
Standby current
INHN pull-up
resistance
Test Conditions
Q: Measurement cct 1, V
DD
= 2.7V, I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 2.7V, I
OL
= 8mA
INH
INH
Q: Measurement
cct 2, INH =
LOW, V
DD
= 3.6V
Measurement cct
3, load cct 1,
V
DD
= 3.0 to 3.6V,
f=125MHz
V
OH
= V
DD
V
OL
= GND
C
L
=30pF
C
L
=15pF
Rating
Min
2.2
-
0.7V
DD
-
-
-
-
-
-
0.4
50
1.76
2.64
2.64
2.80
4.48
50
9.3
7.44
5.58
2.79
9.3
5.58
2.79
13.95
Typ
2.4
0.3
-
-
-
-
40
25
-
-
-
2.2
3.3
3.3
3.5
5.6
-
10
8
6
3
10
6
3
15
Max
-
0.4
-
0.3V
DD
10
10
100
60
10
4
150
2.64
3.96
3.96
4.20
6.72
150
10.7
8.56
6.42
3.21
10.7
6.42
3.21
16.05
pF
kΩ
pF
kΩ
Unit
V
V
V
V
µA
µA
mA
mA
µA
MΩ
kΩ
I
DD
I
ST
R
UP1
R
UP2
Measurement cct 3, INH = LOW
Measurement cct 4, INH=LOW
Measurement cct 4, INH=0.7V
DD
PT7C5005ALA
Design value. A
monitor pattern
on a wafer is
tested.
PT7C5005ALB
PT7C5005ALC
PT7C5005ALD
PT7C5005ALE
R
f1
AC
feedback
resistance
DC feedback
resistance
AC
feedback
capacitance
R
f2
C
f
Measurement cct 5
Design value. A monitor pattern on a wafer is
tested.
PT7C5005ALA
PT7C5005ALD
PT7C5005ALE
PT7C5005ALB
C
G
Built-in
capacitance
C
D
Design value,
determined by the
internal wafer pattern
PT7C5005ALC
PT7C5005ALA
PT7C5005ALD
PT7C5005ALB
PT7C5005ALC
PT7C5005ALE
PT0254(05/07)
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