Silicon Schottky Diode Ring Quad Chips
MA4E2062 Series
Preliminary Specifications
MA4E2062 Series
Silicon Schottky Diode
Ring Quards
Features
•
•
•
•
•
•
•
Small Size
Designed for High Volume, Low Cost
Closely Matched Junctions
High Reliability and Mechanically Rugged
Three Barrier Heights Available
Useful to X-Band
Available in Chip or Plastic SOT-143 Package
Package Outlines
Chip
1,2,3
0.016
±
.002
(0.40
±
0.05)
0.016
±
.002
(0.40
±
0.05)
Description
M/A-COM’s MA4E2062 series is a high-performance silicon
Schottky low, medium and high barrier Ring Quads. Typical
applications include industrial and commercial applications in
mixer and modulator circuits to X-band.
The MA4E2062 Ring Quad is fabricated using monolithic silicon
diode technology that features gold metalization and IC passiva-
tion for increased performance and reliability. The closely
matched junctions minimize variation in capacitance, forward
voltage and series resistance between the four diodes which make
up this ring quad.
The MA4E2062 series is available as a chip (MA4E2062) and in
the plastic SOT-143 package (MA4E2062-1068T). The chip,
MA4E2062, is available in Tape Frame and Gel Pack and the
plastic SOT-143 package style is available in Tape and Reel for
automatic pick and place assembly.
0.004
±
.0005
(0.10
±
0.01)
0.001
±
.001
(0.02
±
0.02)
0.004
±
.0005
(0.10
±
0.01)
0.001
±
.001
(0.02
±
0.02)
0.007
±
.001
(0.175
±
0.02)
Notes:
(unless otherwise specified)
1. Dimensions are in/mm
2. Bondpad Metalization is Gold.
3. Back side is silicon
SOT-143 (1068)
G
J
A
P
N
H
B
L
M
Absolute Maximum Ratings
Parameter
Operating Temperature
Chip
SOT-143
Incident RF Power (CW)2,3,4
DC Current
Junction Temperature
Storage Temperature
Chip
SOT-143
1.
2.
3.
4.
1
E
K
D
C
F
Absolute Maximum
DIM.
MIN.
0.030
0.013
0.003
0.110
0.047
INCHES
MAX.
0.044
0.044
0.040
0.035
0.020
0.006
0.119
0.056
0.075 typical
0.075 typical
GRADIENT
10° max.
1
MILLIMETERS
MIN.
0.75
0.35
0.08
2.80
1.20
1.90 typical
1.90 typical
0.103
0.024
2.6
0.6
MAX.
1.10
1.10
1.00
0.90
0.50
0.15
3.00
1.40
-65°C to +150°C
-65°C to +125°C
75 mW
50 mA
150°C
-65°C to +150°C
-65°C to +125°C
A
B
C
D
E
F
G
H
J
K
L
M
DIM.
N
P
Exceeding these limits may cause permanent damage.
Case Temperature (Tc) = 25 °C.
Derate at 3 mW/°C for Tc > 125°C (chip).
Derate linearly to zero watts at 125°C case temperature (SOT-143).
Note:
1. Applicable on all sides
2° . . . 30°
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
Silicon Schottky Diode Ring Quad Chips
MA4E2062 Series
Electrical Specifications at +25°C
Model Number
Forward Voltage
mV
†
V
F
Typ.
V
F
Max.
∆V
F
Max.
4
220
240
5
220
240
5
380
400
5
380
400
5
580
600
5
580
600
5
1
MA4E2062L
MA4E2062L-1068T
MA4E2062M
MA4E2062M-1068T
MA4E2062H
MA4E2062H-1068T
1.
2.
3.
4.
5.
†
Junction Capacitance
pF
†
C
j
Typ.
C
j
Max.
∆C
j
Max.
5
0.4
0.6
0.05
0.4
0.6
0.05
0.4
0.6
0.05
0.4
0.6
0.05
0.4
0.6
0.05
0.4
0.6
0.05
2
Dynamic Resistance
at 10mA
Ω
R
D
Max.
7.0
7.0
8.0
8.0
6.0
6.0
3
V
F
is measured at I
F
= 1.0 mA
C
j
is measured at V
R
= 0 V and
f
= 1 MHz between non-adjacent bondpads.
Series resistance, R
S
, is the slope resistance less the junction resistance at I
F
= 10 mA.
3
σ
limit
3
σ
limit
Matching criteria between devices in quad.
R
D
= R
S
+ R
J
where R
J
= 26
IF (in mA)
Circuit Model and Model Parameters
The preceding schematic and the non-linear circuit model param-
eters given will provide an accurate representation of the ring
quad for use in harmonic balance simulators using the software’s
built-in diode model. It may be important to include the effects
of bond wire inductance in the model of your circuit. A
reasonable guideline is to use ~0.02 nH per 0.001” of length for
0.001” diameter gold wire. A SPICE netlist is also included for
reference.
Net List
.subckt MA4E2062L 1 2 3 4
* M/A-COM ISBU All Rights Reserved
* MA4E2062 Ring Quad
* diode junctions
D1
1
2
dma
D2
2
3
dma
D3
3
4
dma
D4
4
1
dma
.model dma ( is=566n ikf=0.02 n=1.04
+ rs=1.4 eg=0.7 xti=2 tt=0
+ cj0=0.32p m=0.23 fc=0.1 vj=0.16)
.ends
Schematic
Spice Model Parameters
Schottky Junction
R
S
1
R
J
C
j0
Parameter
IS
IKF
N
RS
CJ0
M
FC
VJ
EG
XTI
TT
1
L
5.66n
0.02
1.04
1.4
0.32p
0.23
0.1
0.16
0.7
2
0
M
3n
0.02
1.05
1.7
0.17p
0.041
0.1
0.07
0.7
2
0
H
2n
0.02
1.68
1.0
0.40p
0.8
0.2
0.70
0.7
2
0
Guiseppe Massabrio and Paolo Antognetti
Semiconductor Device Modeling with
SPICE
McGraw-Hill 1993, 2nd Edition
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
Silicon Schottky Diode Ring Quad Chips
MA4E2062 Series
Handling and Assembly
The MA4E2062 chip and all Schottky barrier junctions, are ESD
sensitive. It is necessary to adhere to the proper ESD handling
precautions.
Die attach may be performed using either epoxy or solder. To
obtain a consistently strong attachment when using epoxies ob-
serve the vendor recommended cleanliness, epoxy pot life, cur-
ing, and carrier fluids. The cleanliness, time, temperature control
and tooling are essential for a good epoxy attachment. The
maximum soldering temperature is 290°C for 5 seconds. Solders
that disolve gold metalization are not recommended.
All electrical connections to the quad must be made through the
four bondpads on the topside of the chip. The bondpads are
junction-isolated from the chip’s backside.
Thermo-
compression wedge bonding using 0.0007” to 0.001” diameter
gold wire is recommended. The leads should be kept as short as
possible (see model).
For more information on die attach and wire bonding see
Bond-
ing and Handling Procedures for Chip Diode Devices
M/A-
COM Application Note M541.
Ordering Information
Model No.
MA4E2062L
MA4E2062L
MA4E2062L-1068
MA4E2062L-1068T
MA4E2062M
MA4E2062M
MA4E2062M-1068
MA4E2062M-1068T
MA4E2062H
MA4E2062H
MA4E2062H-1068
MA4E2062H-1068T
Delivery Form and Barrier Heights
Chip Tape Frame with Low Barrier Height
Chip Gel Pack with Low Barrier Height
SOT-143 Bulk Pack with Low Barrier Height
SOT-143 Tape and Reel with Low Barrier Height
Chip Tape Frame with Medium Barrier Height
Chip Gel Pack with Medium Barrier Height
SOT-143 Bulk Pack with Medium Barrier Height
SOT-143 Tape and Reel with Medium Barrier Height
Chip Tape Frame with High Barrier Height
Chip Gel Pack High Barrier Height
SOT-143 Bulk Pack with High Barrier Height
SOT-143 Tape and Reel with High Barrier Height
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
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