74V2G00
DUAL 2-INPUT NAND GATE
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.7ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
= 25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-8L
SOT323-8L
ORDER CODES
PACKAGE
SOT23-8L
T&R
74V2G00STR
DESCRIPTION
The V2G00 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2003
1/7
74V2G00
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 5
2, 6
7, 3
4
8
SYMBOL
1A, 2A
1B, 2B
1Y, 2Y
GND
V
CC
NAME QND FUNCTION
Data Input
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter²
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Rating are those value beyond which damage to the device may occour. Functional operation under these condition is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperqture
Input Rise and Fall Time (note 1) (V
CC
= 3.3
±
0.3V)
(V
CC
= 5.0
±
0.5V)
Parameter
Value
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
0 to 20
Unit
V
V
V
°C
ns/V
ns/V
1) V
IN
from 30% to 70% of V
CC
2/7
74V2G00
DC SPECIFICATION
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
0 to
5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±
0.1
2
2.0
3.0
4.5
1.9
2.9
4.4
2.48
3.8
0.1
0.1
0.1
0.44
0.44
±
1
20
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.4
3.7
0.1
0.1
0.1
0.55
0.55
±
1
20
µA
µA
V
V
Max.
-55 to 125°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
V
V
Max.
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Ouput
Voltage
V
IL
V
OH
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
Value
T
A
= 25°C
Min.
Typ.
5.5
8.0
3.7
5.2
Max.
7.9
11.4
5.5
7.5
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
Max.
9.5
13.0
6.5
8.5
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
Max.
9.5
13.0
6.5
8.5
ns
Unit
C
L
(pF)
15
50
15
50
t
PLH
t
PHL
Propagation Delay
Time
CAPACITANCE CHARACTERISTICS
Test Condition
Symbol
Parameter
Min.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(note 1)
T
A
= 25°C
Typ.
4
19
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivqlent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current cqn be obtqined by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
3/7
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