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MX25L6408EM2I-12G: 产品描述Flash, 32MX2, PDSO8, 0.200 INCH, HALOGEN FREE AND ROHS COMPLIANT, SOP-8; 产品类别存储存储; 文件大小2MB，共49页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx; 标准

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MX25L6408EM2I-12G概述

Flash, 32MX2, PDSO8, 0.200 INCH, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

MX25L6408EM2I-12G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Macronix
零件包装代码	SOIC
包装说明	SOP, SOP8,.3
针数	8
Reach Compliance Code	unknown
ECCN代码	3A991.B.1.B.1
备用内存宽度	1
最大时钟频率 (fCLK)	86 MHz
数据保留时间-最小值	20
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G8
长度	5.28 mm
内存密度	67108864 bit
内存集成电路类型	FLASH
内存宽度	2
功能数量	1
端子数量	8
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	32MX2
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装等效代码	SOP8,.3
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3/3.3 V
编程电压	3.3 V
认证状态	Not Qualified
座面最大高度	2.16 mm
串行总线类型	3-WIRE
最大待机电流	0.00002 A
最大压摆率	0.025 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
类型	NOR TYPE
宽度	5.23 mm
写保护	HARDWARE/SOFTWARE
Base Number Matches	1

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MX25L6408E

DATASHEET

P/N: PM1643

REV. 1.4, DEC. 09, 2013

MX25L6408E

Contents

FEATURES .................................................................................................................................................................. 5

GENERAL DESCRIPTION ......................................................................................................................................... 6

PIN CONFIGURATIONS ............................................................................................................................................. 7

PIN DESCRIPTION ...................................................................................................................................................... 7

BLOCK DIAGRAM....................................................................................................................................................... 8

MEMORY ORGANIZATION ......................................................................................................................................... 9

Table 1. Memory Organization ............................................................................................................................ 9

DEVICE OPERATION ................................................................................................................................................ 10

Figure 1.

Serial Modes Supported ....................................................................................................... 10

DATA PROTECTION.................................................................................................................................................. 11

Table 2. Protected Area Sizes ............................................................................................................................ 12

HOLD FEATURES ..................................................................................................................................................... 13

Figure 2. Hold Condition Operation

........................................................................................................ 13

COMMAND DESCRIPTION ....................................................................................................................................... 14

Table 4. COMMAND DEFINITION ..................................................................................................................... 14

(1) Write Enable (WREN) ................................................................................................................................... 15

(2) Write Disable (WRDI) .................................................................................................................................... 15

(3) Read Status Register (RDSR) ...................................................................................................................... 15

(4) Write Status Register (WRSR) ...................................................................................................................... 16

Table 5. Protection Modes .................................................................................................................................. 17

(5) Read Data Bytes (READ) ............................................................................................................................. 18

(6) Read Data Bytes at Higher Speed (FAST_READ) ....................................................................................... 18

(7) Dual Output Mode (DREAD) ......................................................................................................................... 18

(8) Sector Erase (SE) ......................................................................................................................................... 18

(9) Block Erase (BE)........................................................................................................................................... 19

(10) Chip Erase (CE) .......................................................................................................................................... 19

(11) Page Program (PP) ..................................................................................................................................... 19

(12) Deep Power-down (DP) .............................................................................................................................. 20

(13) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ............................................. 20

(14) Read Identification (RDID)

.......................................................................................................................... 21

(15) Read Electronic Manufacturer ID & Device ID (REMS) .............................................................................. 21

Table 6. ID DEFINITIONS ................................................................................................................................. 21

(16)

Enter Secured Area (ENSA) ........................................................................................................ 21

(17)

Exit Secured Area (EXSA)........................................................................................................... 21

(18) Read Security Register (RDSCUR) ............................................................................................................ 22

Table 7. SECURITY REGISTER DEFINITION ................................................................................................... 22

(19) Write Security Register (WRSCUR) ............................................................................................................ 22

P/N: PM1643

REV. 1.4, DEC. 09, 2013

MX25L6408E

POWER-ON STATE ................................................................................................................................................... 23

ELECTRICAL SPECIFICATIONS .............................................................................................................................. 24

ABSOLUTE MAXIMUM RATINGS ..................................................................................................................... 24

Figure 3.Maximum Negative Overshoot Waveform ........................................................................................... 24

CAPACITANCE TA = 25°C, f = 1.0 MHz............................................................................................................. 24

Figure 4. Maximum Positive Overshoot Waveform ............................................................................................ 24

Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL.............................................................. 25

Figure 6. OUTPUT LOADING ........................................................................................................................... 25

Table 8. DC CHARACTERISTICS...................................................................................................................... 26

Table 9. AC CHARACTERISTICS ...................................................................................................................... 27

Timing Analysis ........................................................................................................................................................ 28

Figure 7. Serial Input Timing .............................................................................................................................. 28

Figure 8. Output Timing ...................................................................................................................................... 28

Figure 9. Hold Timing ......................................................................................................................................... 29

Figure 10. WP# Disable Setup and Hold Timing during WRSR when SRWD=1 ............................................... 29

Figure 11. Write Enable (WREN) Sequence (Command 06) ............................................................................. 30

Figure 12. Write Disable (WRDI) Sequence (Command 04).............................................................................. 30

Figure 13. Read Status Register (RDSR) Sequence (Command 05) ................................................................ 31

Figure 14. Write Status Register (WRSR) Sequence (Command 01)............................................................... 31

Figure 15. Read Data Bytes (READ) Sequence (Command 03) ...................................................................... 31

Figure 16. Read at Higher Speed (FAST_READ) Sequence (Command 0B)................................................... 32

Figure 17. Dual Output Read Mode Sequence (Command 3B) ......................................................................... 33

Figure 18. Sector Erase (SE) Sequence (Command 20) .................................................................................. 33

Figure 19. Block Erase (BE) Sequence (Command 52 or D8) .......................................................................... 33

Figure 20. Chip Erase (CE) Sequence (Command 60 or C7) ........................................................................... 34

Figure 21. Page Program (PP) Sequence (Command 02)................................................................................ 34

Figure 22. Deep Power-down (DP) Sequence (Command B9)......................................................................... 35

Figure 23. Release from Deep Power-down (RDP) Sequence (Command AB) ............................................... 35

Figure 24. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB)35

Figure 25. Read Identification (RDID) Sequence (Command 9F)

...................................................................... 36

Figure 26. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90).............................. 36

Figure 27. Read Security Register (RDSCUR) Sequence (Command 2B) ........................................................ 37

Figure 28. Write Security Register (WRSCUR) Sequence (Command 2F) ....................................................... 37

Figure 29. Program/ Erase flow with read array data

......................................................................................... 38

Figure 30. Power-up Timing ............................................................................................................................... 39

Table 10. Power-Up Timing ............................................................................................................................... 39

OPERATING CONDITIONS ....................................................................................................................................... 40

Figure 31. AC Timing at Device Power-Up ......................................................................................................... 40

Figure 32. Power-Down Sequence .................................................................................................................... 41

P/N: PM1643

REV. 1.4, DEC. 09, 2013

MX25L6408EM2I-12G相似产品对比

	MX25L6408EM2I-12G	MX25L6408EMI-12G	MX25L6408EZNI-12G
描述	Flash, 32MX2, PDSO8, 0.200 INCH, HALOGEN FREE AND ROHS COMPLIANT, SOP-8	IC FLASH 64M SPI 86MHZ 16SOP	IC FLASH 64MBIT
是否Rohs认证	符合	符合	符合
厂商名称	Macronix	Macronix	Macronix
零件包装代码	SOIC	SOIC	SON
包装说明	SOP, SOP8,.3	SOP, SOP16,.4	HVSON,
针数	8	16	8
Reach Compliance Code	unknown	unknown	unknown
备用内存宽度	1	1	1
最大时钟频率 (fCLK)	86 MHz	86 MHz	86 MHz
JESD-30 代码	R-PDSO-G8	R-PDSO-G16	R-PDSO-N8
长度	5.28 mm	10.3 mm	8 mm
内存密度	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	FLASH	FLASH	FLASH
内存宽度	2	2	2
功能数量	1	1	1
端子数量	8	16	8
字数	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C
组织	32MX2	32MX2	32MX2
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	SOP	HVSON
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行	SERIAL	SERIAL	SERIAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	260
编程电压	3.3 V	3.3 V	2.7 V
座面最大高度	2.16 mm	2.65 mm	0.8 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3 V
表面贴装	YES	YES	YES
技术	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	40
宽度	5.23 mm	7.52 mm	6 mm
Base Number Matches	1	1	1
ECCN代码	3A991.B.1.B.1	3A991.B.1.B.1	-
数据保留时间-最小值	20	20	-
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-
封装等效代码	SOP8,.3	SOP16,.4	-
电源	3/3.3 V	3/3.3 V	-
认证状态	Not Qualified	Not Qualified	-
串行总线类型	3-WIRE	3-WIRE	-
最大待机电流	0.00002 A	0.00002 A	-
最大压摆率	0.025 mA	0.025 mA	-
类型	NOR TYPE	NOR TYPE	-
写保护	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	-
Factory Lead Time	-	16 weeks	16 weeks

MX25L6408EM2I-12G

MX25L6408EM2I-12G概述

MX25L6408EM2I-12G规格参数

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