PD - 94963
IRF3415PbF
l
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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 150V
R
DS(on)
= 0.042Ω
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
D
= 43A
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
43
30
150
200
1.3
± 20
590
22
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
0.50
Max.
0.75
62
Units
°C/W
1/30/04
IRF3415PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
150
2.0
19
Typ.
0.17
12
55
71
69
4.5
7.5
2400
640
340
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.042
Ω
V
GS
= 10V, I
D
= 22A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 50V, I
D
= 22A
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
200
I
D
= 22A
17
nC
V
DS
= 120V
98
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 75V
I
D
= 22A
ns
R
G
= 2.5Ω
R
D
= 3.3Ω, See Fig. 10
D
Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
S
V
GS
= 0V
pF
V
DS
= 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
260
2.2
43
150
1.3
390
3.3
V
ns
µC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C, I
F
= 22A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
22A, di/dt
≤
820A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 2.4mH
R
G
= 25Ω, I
AS
= 22A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
IRF3415PbF
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM 4.5V
1000
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
20us PULSE WIDTH
T
J
= 25
o
C
1
10
100
4.5V
20us PULSE WIDTH
T
J
= 175
o
C
1
10
100
10
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 37A
I
D
, Drain-to-Source Current (A)
2.5
2.0
T
J
= 25
°
C
T
J
= 175
°
C
100
1.5
1.0
0.5
10
V DS = 50V
20µs PULSE WIDTH
4
5
6
7
8
9
10
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
o
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF3415PbF
6000
5000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 22A
16
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
C, Capacitance (pF)
4000
3000
Ciss
12
8
2000
Coss
Crss
1000
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
10us
T
J
= 175
o
C
10
100us
10
T
J
= 25
o
C
1
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
T
C
= 25
o
C
T
J
= 175
o
C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF3415PbF
50
V
DS
V
GS
R
D
40
I
D
, Drain Current (A)
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
30
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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