FLR016FH
K-Band Power GaAs FETs
FEATURES
• High Output Power: P1dB = 20.0dBm(Typ.)
• High Gain: G1dB = 8.5dB(Typ.)
N
High
T
h
add = 26%(Typ.)
•
O
PAE:
• Proven Reliability
REC
OM
DESCRIPTION
MEN
that is designed for
The FLR016FH chip is a power GaAs FET
DED
general purpose applications in the K-Band frequency range as it
provides superior power, gain, and efficiency.
FOR
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
NEW
DES
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25¡C
Condition
Rating
12
-4
1.0
-65 to +175
175
IGN
S
Unit
V
V
W
¡C
¡C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 0.25 and -0.05 mA respectively with
gate resistance of 3000W.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
FH
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
h
add
Rth
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS =40mA
VDS = 5V, IDS =3mA
IGS = -3µA
VDS = 8V,
IDS
=
0.6 IDSS (Typ.),
f = 18 GHz
Channel to Case
Min.
-
-
-1.0
-4
19
7.5
-
-
Limit
Typ. Max.
60
30
-2.0
-
20
8.5
26
120
-
-
-3.5
-
-
-
-
150
Unit
mA
mS
V
V
dBm
dB
%
¡C/W
G.C.P.: Gain Compression Point
1998 Microwave Databook
280
Data Sheets
FLR016FH
K-Band Power GaAs FETs
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
80
VGS =0V
Total Power Dissipation (W)
2.
1.0
Drain Current (mA)
60
-0.5V
40
-1.0V
-1.5V
-2.0V
-2.5V
0.5
20
0
50
100
150
200
0
2
4
6
8
10
Case Temperature (¡C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS = 8V
IDS
»
0.6 IDSS
f = 18GHz
Pout
20
18
Output Power (dBm)
16
14
10
8
2
4
6
8
h
add
20
10
10
12
14
Input Power (dBm)
Data Sheets
281
h
add (%)
1998 Microwave Databook
12
30
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