3. Epoxy meniscus may extend about 1mm (0.040”) down the leads.
Device Selection Guide
Iv (cd) @ 20mA
Part Number
HLMP-CW18-VY0xx
HLMP-CW19-VY0xx
HLMP-CW28-TW0xx
HLMP-CW29-TW0xx
HLMP-CW38-SV0xx
HLMP-CW39-SV0xx
Notes:
1. Tolerance for luminous intensity measurement is +/- 15%
2. The luminous intensity is measured on the mechanical axis of the lamp package.
3. The optical axis is closely aligned with the package mechanical axis.
4. LED light output is bright enough to cause injuries to the eyes. Precautions must be taken to prevent looking directly at the LED without proper safety
equipment.
Typ. Viewing Angle
Min.
15°
15°
23°
23°
30°
30°
4.20
4.20
2.50
2.50
1.90
1.90
Typ.
6.40
6.40
3.80
3.80
3.00
3.00
Standoff Leads
No
Yes
No
Yes
No
Yes
Package
Dimension
A
B
A
B
A
B
Part Numbering System
L M P - C W XX - X X X XX
Mechanical Option
00: Bulk
DD: Ammo Pack
Color Bin Options
0: Full color bin distribution
Maximum Intensity Bin Limit
0: No maximum intensity bin limit
Minimum Intensity Bin Limit
Refer to Device Selection Guide
Viewing Angle
18: 15 without standoffs
19: 15˚ with standoffs
28: 23˚ without standoffs
29: 23˚ with standoffs
38: 30 ˚ without standoffs
39: 30 ˚ with standoffs
Color Options
W: White
Package Options
C: T-1 3/4
2
Absolute Maximum Ratings (T
A
= 25°C)
Parameter
DC Forward Current
[1]
Peak Forward Current
[2]
Average Forward Current
Power Dissipation
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Wave Solder Temperature
[3]
Solder Dipping Temperature
[3]
Notes:
1. Derate linearly as shown in Figure 4.
2. Duty Factor 30%, 1 KHz
3. 1.59 mm (0.060 inch) below body
Value
30
100
30
120
130
-40 to +85
-40 to +100
250 for 3 secs
260 for 5secs
Units
mA
mA
mA
mW
°C
°C
°C
°C
°C
Electrical/Optical Characteristics (T
A
= 25
o
C)
Parameters
Forward voltage
Capacitance
Reverse Voltage
[1]
Thermal resistance
Viewing Angle
[2]
CW18/CW19
CW28/CW29
CW38/CW39
Symbol
V
F
C
V
R
Rθ
J-PIN
2θ
1/2
15
23
30
0.31
0.32
I
F
= 20 mA
Minimum Typical
3.4
53
0.6
240
Maximum Units
4.0
V
pF
V
o
C/W
Test Condition
I
F
= 20 mA
V
F
=0, f=1 MHz
I
R
= 10
µA
LED Junction to cathode lead
I
F
= 20 mA
Degree
Chromaticity Coordinate
[3]
X
Y
Notes:
2. 2
θ
1/2
is the off-axis angle where the luminous intensity is ½ the on axis intensity
1. The reverse voltage of the product is equivalent to the forward voltage of the protective chip at I
R
= 10
µ
A
3. The chromaticity coordinates are derived from the CIE 1931 Chromaticity Diagram and represent the perceived color of the device.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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