targeted for cost sensitive applications requiring high
performance such as set-top boxes, gateways, routers,
computing peripherals, telecom and networking
equipment.
The MIC4600 operates over a supply range of 4.5V to
28V. It has an internal linear regulator which provides a
regulated 5V to power the MOSFET gate drive and
operates up to 1.5 MHz switching frequency.
The MIC4600 uses an adjustable dead time circuit to
prevent shoot-through in the external high and low-side
MOSFETs.
The MIC4600 is available in a small 3mm × 3mm VQFN
package with a junction temperature range of –40°C to
125°C.
Applications
Package Types
MIC4600
3x3 VQFN
Top View
AGND
AVDD
VDD
14
16
15
13
VIN
EN
HSI
LSI
1
2
EPAD
3
4
BST
12
11
10
9
DH
SW
DL
PGND
5
6
7
8
FAULT
DELAY
2016 Microchip Technology Inc.
DS20005584A-page 1
AGND
NC
MIC4600
Typical Application Circuit
MIC4600
3x3 VQFN
D1
VDD
MIC4600
LINEAR
REGULATOR
UVLO
VIN
BST
DH
SW
CONTROL
LOGIC
TIMER
ANTI-SHOOT THRU
VDD
AGND
AGND
DL
PGND
R2
3.24K
R1
10K
4.7µF
0.1µF
C
BST
Lo
4.0µH
+
33µF
V
IN
4.5V TO 28V
VDD
100K
CONTROLLER
AVDD
1.0µF
EN
FAULT
HSI
LSI
105K
EN
FAULT
HSI
LSI
DELAY
V
OUT
3.3V/10A
100µF
FB
Functional Block Diagram
MIC4600
VDD
LINEAR
REGULATOR
UVLO
VIN
BST
AVDD
DH
SW
EN
FAULT
HSI
LSI
DELAY
CONTROL
LOGIC
TIMER
ANTI-SHOOT THRU
VDD
DL
PGND
AGND
AGND
DS20005584A-page 2
2016 Microchip Technology Inc.
MIC4600
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
V
IN
to PGND .............................................................................................................................................. –0.3V to +29V
V
DD
to PGND ............................................................................................................................................... –0.3V to +6V
V
SW
to PGND................................................................................................................................... –0.3V to (V
IN
+0.3V)
V
BST
to V
SW
................................................................................................................................................. –0.3V to +6V
V
BST
to PGND............................................................................................................................................ –0.3V to +34V
V
HSI,
V
LSI
to PGND ......................................................................................................................... –0.3V to (V
DD
+0.3V)
V
FAULT
to AGND........................................................................................................................................... –0.3V to +6V
V
EN
to PGND ................................................................................................................................... –0.3V to (V
IN
+0.3V)
PGND to AGND......................................................................................................................................... –0.3V to +0.3V
ESD Protection On All Pins ......................................................................................................... ±2 kV HBM, ±200V MM
Operating Ratings ††
Supply Voltage, V
IN
.................................................................................................................................... +4.5V to +28V
VDD Supply Voltage, V
DD
......................................................................................................................... +4.5V to +5.5V
Enable Input, V
EN
............................................................................................................................................... 0V to V
IN
Maximum Power Dissipation................................................................................................................................ (Note
1)
† Notice:
Exceeding the absolute maximum ratings may damage the device.
†† Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
Specification for packaged product only.
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
IN
= V
EN
= 12V, V
BST
– V
SW
= 5V; T
A
= 25°C,
C
VIN
= C
VDD
= 1
μF.
Bold
values indicate –40°C
≤
T
J
≤
+125°C.
Parameters
Power Supply Input
Input Voltage Range (V
IN
)
Quiescent Supply Current
Shutdown Supply Current
V
DD
Supply Voltage
V
DD
Output Voltage
V
DD
UVLO Threshold
V
DD
UVLO Hysteresis
Dropout Voltage
(V
IN
– V
DD
)
V
DD
Load Regulation
Enable Control
EN Logic Threshold
EN Hysteresis
EN Input Bias Current
Note 1:
Specified for packaged product only.
0.65
—
—
1.25
69
—
1.4
—
2
V
mV
μA
Rising
—
V
EN
= 12V
4.8
3.6
—
—
—
5
4.2
400
380
1.23
5.4
4.3
—
—
—
V
V
mV
mV
%
V
IN
= 7V to 26V, I
DD
= 25 mA
V
DD
Rising
—
I
DD
= 25 mA, V
IN
= 5V
I
DD
= 0 to 25 mA
4.5
—
—
—
450
9
28
750
20
V
μA
μA
—
HSI = V
DD
, LSI = 0V,
R
DELAY
= 124 kΩ,
non-switching
V
EN
= 0V
Sym.
Min.
Typ.
Max.
Units
Conditions
2016 Microchip Technology Inc.
DS20005584A-page 3
MIC4600
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
IN
= V
EN
= 12V, V
BST
– V
SW
= 5V; T
A
= 25°C,
C
VIN
= C
VDD
= 1
μF.
Bold
values indicate –40°C
≤
T
J
≤
+125°C.
Parameters
Fault
Fault Over Temperature
Over Temperature
Hysteresis
FAULT Logic Level Low
FAULT Pin Leakage
Current
Input Control
HSI Logic Level High
HSI Logic Level Low
HSI Bias Current
LSI Logic Level High
LSI Logic Level Low
LSI Bias Current
Timing
Dead Time
Switching Frequency
Range
Minimum Allowable Pulse
Width
Rise Time (DH, DL)
Fall Time (DH,DL)
Propagation Delay,
Rising HSI to DH
Propagation Delay,
Rising LSI to DL
Propagation Delay,
Falling HSI to DH
Propagation Delay,
Falling LSI to DL
MOSFET Drivers
DH R
DS(ON)
, High
DH R
DS(ON)
, Low
DL R
DS(ON)
, High
DL R
DS(ON)
, Low
Note 1:
Specified for packaged product only.
—
—
—
—
2
1.5
2
1
3
3
3
2
Ω
Ω
Ω
Ω
I
DH
= 20 mA
I
DH
= –20 mA
I
DL
= 20 mA
I
DL
= –20 mA
—
—
—
—
—
—
—
—
—
32
15
13.5
26
18
55
14
18.7
—
1.5
—
—
—
—
—
—
—
ns
MHz
ns
ns
ns
ns
ns
ns
ns
R
DELAY
= 105 kΩ
—
—
C
LOAD
= 3 nF, 10%V
DD
to
90%V
DD
C
LOAD
= 3 nF, 90%V
DD
to
10%V
DD
GND to 10%xV
DD
GND to 10%xV
DD
V
DD
to 90%xV
DD
V
DD
to 90%xV
DD
1.4
—
—
1.4
—
—
—
—
0.01
—
—
0.01
—
0.65
0.1
—
0.65
0.1
V
V
μA
V
V
μA
—
—
V
HSI
= 5V
—
—
V
LSI
= 5V
—
—
—
—
150
23
0.05
0.01
—
—
0.2
0.1
°C
°C
V
μA
T
J
Rising
—
I
FAULT
= 5 mA
V
FAULT
= 5.5V
Sym.
Min.
Typ.
Max.
Units
Conditions
DS20005584A-page 4
2016 Microchip Technology Inc.
MIC4600
TEMPERATURE SPECIFICATIONS (Note
1)
Parameters
Temperature Ranges
Junction Temperature
Lead Temperature
Junction Operating Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 3 x 3 VQFN-16Ld
Note 1:
JA
—
59
—
°C/W
—
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
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