S E M I C O N D U C T O R
IRFR9220,
IRFU9220
3.6A, 200V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-251AA
SOURCE
DRAIN
GATE
December 1995
Features
• 3.6A, 200V
• r
DS(ON)
= 1.500Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The IRFU9220 and IRFR9220 are advanced power MOS-
FETs designed, tested, and guaranteed to withstand a spe-
cific level of energy in the avalanche breakdown mode of
operation. These are P-Channel enhancement-mode silicon
gate power field-effect transistors designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high-power bipolar
switching transistors requiring high speed and low gate-drive
power. These types can be operated directly from integrated
circuits.
PACKAGE AVAILABILITY
PART NUMBER
IRFU9220
IRFR9220
PACKAGE
TO-251AA
TO-252AA
BRAND
IF9220
IF9220
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
Symbol
D
NOTE: When ordering use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
G
Formerly developmental type TA17502.
S
Absolute Maximum Ratings
T
C
= +25
o
C
IRFU9220, IRFR9220
UNITS
V
V
V
A
Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
-200
-200
±20
3.6
Refer to Peak Current Curve
Refer to UIS Curve
42
0.33
-55 to +150
260
W
W/
o
C
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
4015.1
4-15
Specifications IRFR9220, IRFU9220
Electrical Specifications
PARAMETERS
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
MIN
-200
TYP
-
MAX
-
UNITS
V
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= -200V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 2.2A, V
GS
= -10V
V
DD
= -100V, I
D
= 3.9A
R
L
= 24Ω, V
GS
= -10V
R
GS
= 18Ω
T
C
= +25
o
C
T
C
= +150
o
C
-2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.8
27
7.3
19
-
20
11
3.3
550
110
33
-
-4.0
-1
-50
100
1.500
50
-
-
-
-
50
-
-
-
-
-
-
3.00
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate-to-Drain Charge
Gate-to-Source Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance
Junction to Case
Thermal Resistance
Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G
Q
GD
Q
GS
C
ISS
C
OSS
C
RSS
R
θJC
V
GS
= 0 to -10V
V
DD
= -160V,
I
D
= 3.9A,
R
L
= 41Ω
-
-
-
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
-
-
-
R
θJA
-
-
100
o
C/W
Source-Drain Diode Specifications
PARAMETERS
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
RR
Q
RR
TEST CONDITIONS
I
SD
= -3.6A
I
SD
= -3.6A, dI
SD
/dt = -100A/µs
MIN
-
-
TYP
-
150
0.97
MAX
-6.3
300
2.0
UNITS
V
ns
µC
4-16
IRFR9220, IRFU9220
Typical Performance Curves
-20
-10
I
D
, DRAIN CURRENT (A)
100µs
T
C
= +25
o
C
Z
θ
JC
, THERMAL RESPONSE (
o
C/W)
10
0.5
1
0.2
0.1
.05
0.1 .02
.01
SINGLE PULSE
0.01
10
-5
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
1
1ms
-1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
-0.1
-1
100ms
DC
V
DSS
MAX = -200V
-500
-10
-100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
-4
10
-3
10
-2
10
-1
10
0
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
I
DM
, PEAK CURRENT CAPABILITY (A)
-50
T
C
= +25
o
C
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
V
GS
= -20V
-10
V
GS
= -10V
I = I
150
–
T
C
-
25
----------------------
125
I
D
, DRAIN CURRENT (A)
-3
-2
-1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-1
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
I
D(ON)
, ON STATE DRAIN CURRENT (A)
-5
PULSE DURATION = 250µs, T
C
= +25
o
C
V
GS
= -8V
-8
V
DD
= -15V
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-55
o
C
I
D
, DRAIN CURRENT (A)
-4
V
GS
= -10V
V
GS
= -20V
V
GS
= -7V
-6
+25
o
C
-3
V
GS
= -6V
-4
-2
-2
-1
V
GS
= -5V
V
GS
= -4.5V
0.0
-1.5
-3.0
-4.5
-6.0
-7.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
+150
o
C
0
0
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
-7.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
4-17
IRFR9220, IRFU9220
Typical Performance Curves
(Continued)
PULSE DURATION = 250µs, V
GS
= -10V, I
D
= -3.9A
r
DS(ON)
, NORMALIZED ON RESISTANCE
2.5
V
GS(TH)
, NORMALIZED GATE
2.0
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80
o
120
160
0.0
-80
-40
0
40
80
o
120
160
T
J
, JUNCTION TEMPERATURE ( C)
T
J
, JUNCTION TEMPERATURE ( C)
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
I
D
= 250µA
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0.0
BV
DSS
, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
(
o
C)
160
0
25
50
75
100
(
o
C)
125
150
T
J
, JUNCTION TEMPERATURE
T
C
, CASE TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
-200
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-10.0
V
GS
, GATE-SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
700
600
C, CAPACITANCE (pF)
C
ISS
500
400
300
200
100
0
0
C
RSS
-5
-10
-15
-20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-25
V
DD
= BV
DSS
V
DD
= BV
DSS
-160
R
L
= 51Ω
I
G(REF)
= -1.45mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
-40
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
-8.0
-120
-6.0
-80
-4.0
C
OSS
-2.0
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0.0
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTES AN7254 AND AN7260
4-18
IRFR9220, IRFU9220
Typical Performance Curves
(Continued)
-10
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
-1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
R
G
-
V
DD
+
BV
DSS
V
DS
V
DD
0V
t
P
I
L
-V
GS
DUT
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
V
DD
R
L
t
ON
t
D(ON)
t
R
V
DS
V
DS
V
GS
10%
t
OFF
t
D(OFF)
t
F
10%
0V
90%
90%
-V
GS
R
GS
DUT
10%
50%
PULSE WIDTH
90%
50%
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-19
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