MPLAD6.5KP10A(e3) –
MPLAD6.5KP48CA(e3)
Available
6.5 kW, Unidirectional and Bidirectional
TVS Protection Device
DESCRIPTION
High-Reliability
screening available
in reference to
MIL-PRF-19500
These 6.5 kW rated transient voltage suppressors (TVS) in a surface mount PLAD package are provided
with design features to minimize thermal resistance and cumulative heating. These devices have the
ability to clamp dangerous high voltage, short term transients such as those produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit
design. Typical applications include lighting and automotive load dump protection. They are particularly
effective at meeting the multi-stroke lightning standard RTCA DO-160, section 22 for aircraft design.
This efficient low profile package design is offered in standoff voltage selections (V
WM
) of 10 volt to 48
volts in either unidirectional or bidirectional construction. This product addition expands High reliable
PLAD product portfolio. For more information on PLAD products, broad range of TVS devices please
visit our website.
Important:
For the latest information, visit our website
http://www.microsemi.com.
mini-PLAD
(The cathode is the heatsink
under the body of this device.)
FEATURES
•
•
•
•
•
Available in both unidirectional and bidirectional construction (bidirectional with CA suffix).
High reliability with wafer fabrication and assembly lot traceability.
All parts surge tested.
Low profile surface mount package.
Optional upscreening is available with various screening and conformance inspection options based
on MIL-PRF-19500. Refer to
Hi-Rel Non-Hermetic Products
brochure on our web site for more
details on the screening options.
Suppresses transients up to 6,500 W @ 10/1000 μs (see
figure 1).
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020.
3σ lot norm screening performed on standby current (I
D
).
RoHS compliant (2002/95/EC) devices available.
Halogen free (IEC 61249-2-21)
•
•
•
•
•
APPLICATIONS / BENEFITS
•
•
•
•
•
Protection from switching transients and induced RF.
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1,2,3,4,5: MPLAD6.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1,2,3,4: MPLAD6.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance:
Class 2,3: MPLAD6.5KP10A to 48CA
Class 4: MPLAD6.5KP10A to 22CA
Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 25 ºC)*:
Level 1,2,3,4: MPLAD6.5KP10A to 48CA
Level 5: MPLAD6.5KP10A to 43CA
Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs at 25 ºC)*:
Level 1 and 2: MPLAD6.5KP10A to 48CA
Level 3: MPLAD6.5KP10A to 36CA
Level 4: MPLAD6.5KP10A to 12CA
I
PP
rating of 40.1 amps to 383 amps.
V
WM
rating of 10 volts to 48 volts.
V
(BR)(min)
range of 11.1 volts to 53.3 volts.
V
C(MAX)
rating of 17 volts to 77.4 volts
*See
MicroNote 132
for further temperature derating selection.
•
•
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
•
•
•
•
RF01083, Rev A (4/5/13)
©2013 Microsemi Corporation
Page 1 of 6
MPLAD6.5KP10A(e3) –
MPLAD6.5KP48CA(e3)
MAXIMUM RATINGS
@ 25 C unless otherwise specified
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Peak Pulse Power @ 10/1000
µs
t
clamping
(0 volts to V
(
BR)
min)
Forward Clamping Voltage @ 300 Amps
(3)
Forward Surge Current
Solder Temperature @ 10 s
(5)
Rated Average Power dissipation
Notes:
1.
2.
3.
4.
5.
(2)
o
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
P
PP
Value
-55 to +150
50
1.5
6,500
<100
<5
2.5
400
260
(1)
2.5
(4)
33.3
Unit
ºC/W
ºC/W
ºC/W
W
ps
ns
V
A
ºC
W
W
Unidirectional
Bidirectional
(3)
T
A
= 25 °C
T
C
= 100 °C
V
FS
I
FSM
T
SP
P
M(AV)
When mounted on FR4 PC board with recommended mounting pad (see
pad layout).
Also see
figures 1 and 2.
With impulse repetition rate (duty factor) of 0.05% or less.
At 8.3 ms half-sine wave (unidirectional devices only).
Case temperature controlled on heat sink as specified.
See MicroNote 134 for derating P
PP
when also applying steady-state power.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Epoxy, meets UL94V-0.
TERMINALS: Tin/lead or matte-tin (fully RoHS compliant) plating.
MARKING: Part number.
DELIVERY option: Tape and reel (13 inch).
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
*(see
Hi-Rel Non-Hermetic
Product Portfolio)
Package Designation
P
PP
Rating (W)
PLAD 6.5K P
7.0
CA
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Polarity
A = Unidirectional
CA = Bidirectional
Reverse Standoff Voltage
Plastic
RF01083, Rev A (4/5/13)
©2013 Microsemi Corporation
Page 2 of 6
MPLAD6.5KP10A(e3) –
MPLAD6.5KP48CA(e3)
SYMBOLS & DEFINITIONS
Definition
Breakdown Current: The current used for measuring breakdown voltage V
(BR)
.
Standby Current: The current at the rated standoff voltage V
WM
.
Peak Impulse Current: The peak current during the impulse.
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Clamping Voltage: Clamping voltage at I
PP
(peak pulse current) at the specified pulse conditions (typically shown as
maximum value).
Rated Working Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by change in temperature.
Symbol
I
(BR)
I
D
I
PP
V
(BR)
V
C
V
WM
α
V(BR)
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
REVERSE
STAND-
OFF
VOLTAGE
V
WM
Volts
BREAKDOWN
VOLTAGE V
(BR)
V
(BR)
@
Volts
I
(BR)
mA
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ I
PP
Volts
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
µA
MAXIMUM PEAK
PULSE
CURRENT
(FIG. 2)
I
PP
Amps
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
(BR)
α
V(BR)
mV/°C
DEVICE*
MPLAD6.5KP10A(e3)
MPLAD6.5KP11A(e3)
MPLAD6.5KP12A(e3)
MPLAD6.5KP13A(e3)
MPLAD6.5KP14A(e3)
MPLAD6.5KP15A(e3)
MPLAD6.5KP16A(e3)
MPLAD6.5KP17A(e3)
MPLAD6.5KP18A(e3)
MPLAD6.5KP20A(e3)
MPLAD6.5KP22A(e3)
MPLAD6.5KP24A(e3)
MPLAD6.5KP26A(e3)
MPLAD6.5KP28A(e3)
MPLAD6.5KP30A(e3)
MPLAD6.5KP33A(e3)
MPLAD6.5KP36A(e3)
MPLAD6.5KP40A(e3)
MPLAD6.5KP43A(e3)
MPLAD6.5KP45A(e3)
MPLAD6.5KP48A(e3)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
11.1 - 12.3
12.2 - 13.5
13.3 - 14.7
14.4 - 15.9
15.6 - 17.2
16.7 - 18.5
17.8 - 19.7
18.9 - 20.9
20.0 - 22.1
22.2 - 24.5
24.4 - 26.9
26.7 - 29.5
28.9 - 31.9
31.1 - 34.4
33.3 - 36.8
36.7 - 40.6
40.0 - 44.2
44.4 - 49.1
47.8 - 52.8
50.0 – 55.3
53.3 – 58.9
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.5
48.4
53.3
58.1
64.5
69.4
72.7
77.4
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
383
358
327
302
280
267
250
236
223
202
183
167
154
143
135
123
111
101
93
89
85
9
10
11
12
13
15
16
18
19
22
24
27
29
30
35
38
40
45
49
51
54
* See part nomenclature for additional screening prefixes.
RF01083, Rev A (4/5/13)
©2013 Microsemi Corporation
Page 3 of 6
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