FLK017XP
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
High Output Power: P1dB = 20.5dBm(Typ.)
High Gain: G1dB = 8.0dB(Typ.)
High PAE:
η
add = 26%(Typ.)
Proven Reliability
Source
Gate
Drain
DESCRIPTION
The FLK017XP chip is a power GaAs FET that is designed for
general purpose applications in the Ku-Band frequency range as it
provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Source
Rating
15
-5
Unit
V
V
W
°C
°C
Tc = 25°C
1.15
-65 to +175
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with
gate resistance of 3000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Noise Figure
Associated Gain
Maximum Availble Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
NF
Gas
Ga(max)
Rth
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 40mA
VDS = 5V, IDS = 3mA
IGS = -3µA
VDS = 10V
IDS
≈
0.6 IDSS
f = 14.5GHz
VDS = 3V
IDS = 20mA
f = 12GHz
VDS = 10V
IDS = 36mA
f = 12GHz
Channel to Case
Min.
-
-
-1.0
-5
19.5
7.0
-
-
-
-
-
Limit
Typ. Max.
60
90
30
-2.0
-
20.5
8.0
26
2.5
7
11
65
-
-3.5
-
-
-
-
-
-
-
130
Unit
mA
mS
V
V
dBm
dB
%
dB
dB
dB
°C/W
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
G.C.P.: Gain Compression Point
Edition 1.3
July 1999
1
FLK017XP
GaAs FET & HEMT Chips
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Total Power Dissipation (W)
Drain Current (mA)
2
60
VGS =0V
-0.5V
40
-1.0V
20
-1.5V
-2.0V
1
0
50
100
150
200
2
4
6
8
10
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
20
IDS
≈0.6I
DSS
f = 14.5GHz
18
P1dB &
η
add vs. VDS
f = 14.5GHz
IDS
≈0.6I
DSS
Output Power (dBm)
22
P1dB (dBm)
Pout
21
η
add (%)
20
19
η
add
P1dB
16
η
add (%)
14
12
η
add
40
30
20
40
20
18
2
4
6
8
10 12
14
8
9
10
Input Power (dBm)
Drain-Source Voltage (V)
2
FLK017XP
GaAs FET & HEMT Chips
S-PARAMETERS
VDS = 10V, IDS = 40mA
FREQUENCY
(MHZ)
100
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
18500
19000
19500
20000
S11
MAG
1.000
.998
.992
.982
.969
.953
.936
.918
.899
.881
.863
.846
.830
.816
.802
.791
.780
.771
.764
.757
.752
.747
.744
.741
.739
.738
.738
.738
.739
.740
.742
.744
.746
.749
.752
.755
.758
.761
.765
.768
.772
S21
ANG
-1.9
-9.5
-18.9
-28.2
-37.4
-46.3
-55.0
-63.5
-71.6
-79.5
-87.1
S12
ANG
178.4
171.9
163.9
156.0
148.3
140.7
133.4
126.2
119.4
112.7
106.3
100.1
94.1
88.3
82.7
77.2
72.0
66.8
61.8
57.0
52.2
47.6
43.0
38.6
34.2
29.9
25.7
21.6
17.5
13.5
9.5
5.6
1.7
-2.1
-5.9
-9.6
-13.3
-16.9
-20.5
-24.1
-27.7
S22
ANG
88.9
84.7
79.5
74.3
69.4
64.6
60.0
55.6
51.5
47.6
44.0
40.6
37.3
34.3
31.5
28.9
26.4
24.1
21.9
19.8
17.9
16.1
14.4
12.8
11.3
9.9
8.6
7.3
6.2
5.1
4.1
3.1
2.3
1.5
0.7
0.0
-0.6
-1.2
-1.7
-2.2
-2.7
MAG
2.832
2.824
2.799
2.758
2.703
2.638
2.564
2.485
2.401
2.316
2.231
2.147
2.064
1.985
1.908
1.834
1.764
1.697
1.634
1.574
1.516
1.462
1.410
1.361
1.314
1.269
1.227
1.186
1.147
1.110
1.074
1.039
1.006
.974
.943
.913
.885
.856
.829
.803
.777
MAG
.001
.007
.014
.021
.028
.034
.039
.044
.049
.053
.056
.059
.062
.064
.066
.067
.069
.070
.071
.072
.072
.073
.073
.073
.073
.073
.073
.073
.073
.073
.072
.072
.072
.071
.071
.071
.070
.070
.070
.070
.069
MAG
.846
.845
.842
.838
.832
.825
.817
.809
.800
.792
.784
.776
.769
.762
.755
.749
.744
.739
.735
.731
.727
.724
.721
.718
.716
.713
.711
.710
.708
.707
.706
.705
.704
.704
.703
.703
.703
.703
.703
.704
.704
ANG
-0.6
-2.9
-5.7
-8.5
-11.2
-13.8
-16.4
-18.8
-21.2
-23.5
-25.8
-28.0
-30.1
-32.2
-34.3
-36.4
-38.4
-40.5
-42.5
-44.6
-46.7
-48.8
-51.0
-53.2
-55.4
-57.6
-59.8
-62.1
-64.5
-66.8
-69.2
-71.7
-74.2
-76.7
-79.2
-81.8
-84.5
-87.1
-89.8
-92.6
-95.3
-94.4
-101.5
-108.3
-114.8
-121.1
-127.1
-133.0
-138.6
-143.9
-149.1
-154.1
-158.9
-163.5
-168.0
-172.3
-176.4
179.6
175.8
172.1
168.5
165.1
161.8
158.5
155.5
152.5
149.6
146.8
144.1
141.4
138.9
NOTE:*
The data includes bonding wires.
n: number of wires
Gate n=1 (0.2mm length, 25µm Dia Au wire)
Drain n=1 (0.2mm length, 25µm Dia Au wire)
Source n=4 (0.3mm length, 25µm Dia Au wire)
Download S-Parameters, click here
3
FLK017XP
GaAs FET & HEMT Chips
CHIP OUTLINE
40
(Unit:
µm)
Drain
410±30
Source electrodes are electrically
insulated from the bottom of the
chip (PHS)
Die Thickness: 60±20µm
60
70
330±30
Source
110
Gate
Source
40
70
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
50
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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