RHRD440CC, RHRD460CC, RHRD440CCS,
RHRD460CCS
Data Sheet
January 2000
File Number
4498.1
4A, 400V - 600V Hyperfast Dual Diodes
The RHRD440CC, RHRD460CC, RHRD440CCS and
RHRD460CCS are hyperfast dual diodes with soft recovery
characteristics (t
rr
< 30ns). They have half the recovery time
of ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49055.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRD440CC
RHRD460CC
RHRD440CCS
RHRD460CCS
PACKAGE
TO-251AA
TO-251AA
TO-252AA
TO-252AA
BRAND
HR440C
HR460C
HR440C
HR460C
Packaging
JEDEC TO-251AA
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD460CCS9A.
Symbol
K
JEDEC TO-252AA
A
1
A
2
CATHODE
(FLANGE)
ANODE 2
ANODE 1
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
RHRD440CC,
RHRD440CCS
400
400
400
4
8
40
50
10
-65 to 175
300
260
RHRD460CC,
RHRD460CCS
600
600
600
4
8
40
50
10
-65 to 175
300
260
UNITS
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
T
C
= 155
o
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
Square Wave, 20kHz
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
Halfwave, 1 Phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
,T
J
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
1
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2000
RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS
Electrical Specifications
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
RHRD440CC, RHRD440CCS
SYMBOL
V
F
I
F
= 4A
I
F
= 4A, T
C
= 150
o
C
I
R
V
R
= 400V
V
R
= 600V
V
R
= 400V, T
C
= 150
o
C
V
R
= 600V, T
C
= 150
o
C
t
rr
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 4A, dI
F
/dt = 200A/µs
t
a
t
b
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 4A, dI
F
/dt = 200A/µs
I
F
= 4A, dI
F
/dt = 200A/µs
I
F
= 4A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
16
7
45
15
-
MAX
2.1
1.7
100
-
500
-
30
35
-
-
-
-
3
RHRD460CC, RHRD460CCS
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
16
7
45
15
-
MAX
2.1
1.7
-
100
-
500
30
35
-
-
-
-
3
UNITS
V
V
µA
µA
µA
µA
ns
ns
ns
ns
nC
pf
o
C/W
Typical Performance Curves
20
Unless Otherwise Specified
500
175
o
C
100
I
F
, FORWARD CURRENT (A)
10
I
R
, REVERSE CURRENT (µA)
10
100
o
C
1
175
o
C
1
100
o
C
25
o
C
0.1
25
o
C
0.01
0.5
0
0.5
1
1.5
2
2.5
3
0.001
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS
Typical Performance Curves
30
25
20
15
10
Unless Otherwise Specified
(Continued)
50
T
C
= 100
o
C, dI
F
/dt = 200A/µs
T
C
= 25
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
40
t
rr
t
a
t
rr
30
20
t
a
t
b
t
b
5
0
0.5
10
1
I
F
, FORWARD CURRENT (A)
4
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
50
40
30
20
10
0
0.5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
60
5
t
rr
4
SQ. WAVE
3
DC
2
t
a
t
b
1
1
I
F
, FORWARD CURRENT (A)
4
0
140
145
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
50
C
J
, JUNCTION CAPACITANCE (pF)
40
30
20
10
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
RHRD440CC, RHRD460CC, RHRD440CCS, RHRD460CCS
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I
MAX
= 1A
L = 20mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
4