MOSFET
INCHANGE
IRF830
N-channel mosfet transistor
Features
・With
TO-220 package
・Simple
drive requirements
・Fast
switching
・V
DSS
=500V; R
DS(ON)
≤1.5Ω;I
D
=4.5A
・1.gate
2.drain 3.source
123
Absolute Maximum Ratings Tc=25℃
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
PARAMETER
Drain-source voltage (V
GS
=0)
Gate-source voltage
Drain Current-continuous@ T
C
=25℃
Total Dissipation@T
C
=25℃
RATING
500
±20
4.5
100
150
UNIT
V
V
A
W
℃
℃
固电
IN
Max. Operating Junction temperature
Storage temperature
Electrical Characteristics Tc=25℃
SYMBOL
PARAMETER
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
Drain-source breakdown voltage
Gate threshold voltage
ES
ANG
CH
导½
半
-65~150
ON
MIC
E
CONDITIONS
OR
DUT
MIN
MAX
TO-220
UNIT
V
GS
=0; I
D
=0.25mA
500
2
4
1.5
±100
V
V
Ω
nA
uA
V
V
DS
= V
GS
; I
D
=0.25mA
V
GS
=10V; I
D
=2.7A
V
GS
=
±20V
;V
DS
=0
V
DS
=500V; V
GS
=0
I
F
=4.5A; V
GS
=0
Drain-source on-stage resistance
Gate source leakage current
Zero gate voltage drain current
Diode forward voltage
1.0
1.6
电源技术
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