PD - 94168A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHNA597260 100K Rads (Si) 0.102Ω -35.5A
IRHNA593260 300K Rads (Si)
0.102Ω -35.5A
IRHNA597260
200V, P-CHANNEL
4
#
TECHNOLOGY
c
SMD-2
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
3.3 ( Typical )
-35.5
-22.5
-142
300
2.4
±20
320
-35.5
30
10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
For footnotes refer to the last page
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1
08/07/01
IRHNA597260
Pre-Irradiation
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + LD
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitanc
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-200
—
—
V
—
0.25 —
V/°C
—
— 0.11
—
— 0.102
Ω
—
—
0.2
-2.0
— -4.0
V
23
—
—
S
—
—
-10
µA
—
—
-25
—
— -100
nA
—
—
100
—
—
180
—
—
60
nC
—
—
40
—
—
35
—
—
80
ns
—
—
100
—
—
200
—
4.0
— nH
—
—
—
7170
920
86
—
—
—
pF
Conditions
V
GS
= 0V, I
D
= - 1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D
= -35.5A
V
GS
= -12V, I
D
= -22.5A
V
GS
= -12V, I
D
= -22.5A,T
J
=125°C
V
DS
= V
GS
, I
D
= -1mA
V
DS
> -15V, I
D
= -22.5 A
V
DS
= -200V, V
GS
= 0V
V
DS
= -160V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -35.5A
V
DS
= -100V
V
GS
= -12V
V
DD
= -100V, I
D
= -35.5A
V
GS
= -12V, R
G
= 2.35
Ω
Measured from the center of
drain pad to center of source pad
V
GS
= 0V, V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-35.5
-142
-5.0
450
5.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -35.5A, VGS = 0V
➃
Tj = 25°C, IF =-35.5A, di/dt
≤
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
1.6
0.42
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (SMD-2)
Diode Forward Voltage
➃
100K Rads(Si)
1
Min
Max
-200
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.103
0.102
-5.0
300KRads(Si)
2
Min
Max
-200
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-10
0.103
0.102
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
= -160V, V
GS
=0V
V
GS
= -12V, I
D
=-22.5A
V
GS
= -12V, I
D
=-22.5A
V
GS
= 0V, IS = -35.5A
1. Part number IRHNA597260,
2. Part number IRHNA593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.3
59.9
82.3
Energy
(MeV)
285
345
357
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 200
- 200
- 200
- 200
-75
32.7
- 200
- 200
- 200
- 50
—
28.5
- 200
- 200
- 200
- 35
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA597260
Pre-Irradiation
1000
100
-5.0V
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
-5.0V
10
1
10
20µs PULSE WIDTH
T = 25 C
J
°
100
10
1
20µs PULSE WIDTH
T = 150 C
J
°
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -35.5A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 150
°
C
1.5
100
1.0
0.5
10
5.0
15
V DS = -50V
20µs PULSE WIDTH
6.5
5.5
6.0
7.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA597260
10000
8000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -35.5A
16
C, Capacitance (pF)
Ciss
V
DS
=-160V
V
DS
=-100V
V
DS
=-40V
6000
12
4000
8
2000
C
rss
0
1
C
oss
4
0
FOR TEST CIRCUIT
SEE FIGURE 13
150
200
0
50
100
250
10
100
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
T
J
= 25
°
C
-I D, Drain-to-Source Current (A)
100
10
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
0.1
0.0
V
GS
= 0 V
1.5
3.0
4.5
6.0
10ms
-V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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