1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28, CERAMIC, DIP-28
| 参数名称 | 属性值 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 包装说明 | DIP, |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最大模拟输入电压 | 5.05 V |
| 最小模拟输入电压 | -5.05 V |
| 最长转换时间 | 13.8 µs |
| 转换器类型 | ADC, SUCCESSIVE APPROXIMATION |
| JESD-30 代码 | R-GDIP-T28 |
| JESD-609代码 | e0 |
| 长度 | 36.83 mm |
| 最大线性误差 (EL) | 0.0244% |
| 标称负供电电压 | -5 V |
| 模拟输入通道数量 | 1 |
| 位数 | 12 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出位码 | 2\'S COMPLEMENT BINARY |
| 输出格式 | PARALLEL, WORD |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 认证状态 | Not Qualified |
| 采样并保持/跟踪并保持 | SAMPLE |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.715 mm |
| 最大压摆率 | 6 mA |
| 标称供电电压 | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| 5962-9157801MXA | ADC1241CIJ/NOPB | 5962-9157801MXX | |
|---|---|---|---|
| 描述 | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28, CERAMIC, DIP-28 | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28, CERAMIC, DIP-28 | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28, CERAMIC, DIP-28 |
| 包装说明 | DIP, | DIP, | DIP, |
| Reach Compliance Code | unknown | compliant | unknown |
| ECCN代码 | 3A001.A.2.C | EAR99 | 3A001.A.2.C |
| 最大模拟输入电压 | 5.05 V | 5.05 V | 5.05 V |
| 最小模拟输入电压 | -5.05 V | -5.05 V | -5.05 V |
| 最长转换时间 | 13.8 µs | 13.8 µs | 13.8 µs |
| 转换器类型 | ADC, SUCCESSIVE APPROXIMATION | ADC, SUCCESSIVE APPROXIMATION | ADC, SUCCESSIVE APPROXIMATION |
| JESD-30 代码 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| 最大线性误差 (EL) | 0.0244% | 0.0244% | 0.0244% |
| 标称负供电电压 | -5 V | -5 V | -5 V |
| 模拟输入通道数量 | 1 | 1 | 1 |
| 位数 | 12 | 12 | 12 |
| 功能数量 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 |
| 最高工作温度 | 125 °C | 85 °C | 125 °C |
| 最低工作温度 | -55 °C | -40 °C | -55 °C |
| 输出位码 | 2\'S COMPLEMENT BINARY | 2'S COMPLEMENT BINARY | 2\'S COMPLEMENT BINARY |
| 输出格式 | PARALLEL, WORD | PARALLEL, WORD | PARALLEL, WORD |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 采样并保持/跟踪并保持 | SAMPLE | SAMPLE | SAMPLE |
| 座面最大高度 | 5.715 mm | 5.715 mm | 5.715 mm |
| 标称供电电压 | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | INDUSTRIAL | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm |
| 厂商名称 | Texas Instruments(德州仪器) | - | Texas Instruments(德州仪器) |
| JESD-609代码 | e0 | - | e0 |
| 长度 | 36.83 mm | - | 36.83 mm |
| 筛选级别 | MIL-STD-883 | - | MIL-STD-883 |
| 最大压摆率 | 6 mA | 6 mA | - |
| 端子面层 | TIN LEAD | - | TIN LEAD |
| Base Number Matches | 1 | 1 | - |
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