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R c e t r lc r nc
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Ma u a t r dCo o e t
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R c e tr b a d d c mp n ns ae
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) LP F
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y
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u pyn rd cs h t ai y u tme e p ca
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h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
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o
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ANALOG
DEVICESFAX-ON-DEMANDOTLINE
H
- Page 2
"
-.
W
FEATURES
ANALOG
DEVICES
... .. . . .. .. ... .. ..,
220V/~1
Min
High-Speed
Voltage
FoIIowerIB uffe r
BUF-O3
I
in an open-loop circuit employing source followers and
emitterfollowers. the BUF-{)3utilizes a quasi-quad FETinput
structure to optimize both speed
and D.C.
input character-
istics. On-chipzener-zap trimming
is used to achieve
low
offset voltage while careful
biasing
throughout results in
excell_entgain linearity over the full Input voltage range.
Applications for which the BUF-{)3is well-suited include
high-speed line drivers. isolation amplifiers
for driving
reactive loads. and high-speed sample-hold circuits.
.
.
.
.
WideBandwidth
63MHz
.
LoadDriveCurrent. . .. .. . . . . . . .. .. .. .. ...
70mA Peak
.
EasilyDrives
Large
CapacltlvttLoadsWithoutOscillation
.
High Input Resistance.
. . . . . .
.. .
5
X
1011f!
.
very
High Slew Rate.
OBS
ORDERING
INFORMATIONt
Ta = ZS.C
YOI MAX
(mY)
6
6
15
15
Low Output Resistance
2f!
very Low Bla.
Cum"t (Warmed-Up)
,.
400pA
Max
LowOffaelVottage
6mVMax
.
Unity Gain
,
0.997V/V
. EIceUenl Gain Linearity. . . . . . . . . , . . . . . . . . . . . .. 0.015'10
. Available In Die Form
PIN CONNECTIONS
N.C.
.
NUu.
7 V.
.
PACKAGE
TO-"
8-PlN
BUFO3AJ-
BUF03EJ
BUF03BJ'
BUF03FJ
For daYlces prOcess.d In
Iolalcompliance
to !.AIL-Sro-S83. add 18&3
IfI8r
part
number. Consult
laclDry
for 883 data sh&8l.
.
Bum-In
Is availabltt
on commercia!
and
industria!
temperature
range
parts
in
t
c.rDIP,
plasdc DIP. and T().can packages.
GENERAL DESCRIPTION
The BUF-o3is the first very high-speedmonolithic
voltage
follower. Featuring performance previously unobtainable Ina
monolithic unit. it offers a combination of both exceptional
speed and excellent input/output specifications. Implemented
SIMPLIFIED SCHEMATIC
OLE
TE
-
0,
TO-99 (J-Sufllx)
MIL
COM
MIL
COM
H.C.l.
IHPUT
a
OPERATING
TEMPERATURE
RANGE
"
>
HULl
6 OIlTPUT
.
V-(CASE)
OPTIONAL
OFFSET NULLING CIRCUIT
OUTPUT
y+
OUil'UT
INPlJT
0-..
v-
:"1-
--
ANALOG
DEVICESfA~-ON-DEMAND
HOTLINE
-
Page
3
.'
BUF-O3
ABSOLUTE MAXIMUM RATINGS
Supply
Voltage
""""""""""""""""'"
:t16V
""""'"
l.00W
.
Internal PowerDissipation
(Pd)
In
Still Air Without
Heat Sink
(Note 1)
Input Voltage
(Note
2)
Dice
Junction Temperature(Tj)
Thermal Resistance OJA
(Note 1)
Thermal Resistance8JC(Note 1)
NOTES:
1. Based
on
-65°C
to +175°C
150°CIW
18°CIW
,..
:t18V
70mA
100mA
Continuous
Output Current (Note
3)
Indefinite
Peak
Output Current (Note
3)
Short Circuit Protection
(Note 3)
MIL-STD-38510
published thermal resistance specification for 8
lallo can-case oulline C.
is equal to tho supply 'oltage.
2. When Vcc.-.:t 18V. the maximum input 'ollage
3. The maximum Pa or Tj are not to be exce.;ded.
4. At SOmA.
5. When operating
at TA > +25'C.
(Note 4)
Maximu.p_JunctionTemperature(Tj)
,
175°C
Storage Temperature Range. . . . . . . . . . ..
-65°C
to + 175°C
Operating
Temperature Range (Note 5)
'
-55°C to + 125°C
heat sinking is required
to insure TiMAX
=
+ 175'C specification is notexceedeo
using theequetton
Tjw.x- TA+ (Pa x
6JCMAX + 6SAi where 8M
sink to ambient thermal resistance.
PMI
=
Lead
Temperature (Soldering,
60 sec)
300.C
recommenos using either the Thermalloy 2227 or 1101or equivalent when
operating up to TA
=
+
12S'C.
ELECTRICAL CHARACTERISTICS
at Vs""
:t15V. Rs'" DO,T" '" Tj = 25°C, unless otherwise noted.
(Note 1)
OBS
PARAMETER
SYMBOL
AC SPECIFICATIONS
Slew Rate
SR
POWilTBandwidtl'l
Bandwidlh
PBW
BW
~V'N
Settling Tim.
Capaeltl...
CONDITIONS
BUF.O3A/E
MIH
TYP MAX
BUF.O3B/F
IIIN
TVP MAX
UNITS
Rl ~ 2kO. Cl = 50pF.
fA
fJ
75'C
= =
220
250
180
250
VIN
10Vp-p'
~ 2kl!
=
Rl
=
~ 2V£:p,
ts
To 0..1%,:t 10V step
No Osciltations
Load Capability
Delay
CLOAO
Propagation
Rise Time
td
Step Inpul
~V
t,
=
0.5V
Wide Band InpUI Noise Voltage
Inpul Noi..
Voltage Density
Vn
en
DC to 50MHz
I
=
10kHz
DC SPECIFICATIONS
Input Offset Voltage
Inpul Bias Current
Input Resistance
Vas
18
A'N
RS~ 20kCl (Note 21
OLE
TE
-
9
63
-
90
-
-
1
-
8
-
50
100
-
VII's
MHz
-
MHz
-
-
7
-
7
50
ns
-
..F
-
ns
-
ns
-
350
-
400
I'VRMS
60
nVI.jH'l
2
6
15
mV
pA
150
400
160
700
-
sx lO'l
-
4x1011
-
Cl
At ~ 10kO
Voltage Gain (V'N
=
:t1DV)
Ava
Rl ~ 2kl)
Rl<: 11<Cl
0.9960
0.9945
0.9925
0.9975
0.9960
0.91045
0..015
0..013
40
0.023
0.023
60
0.9940
0.9930
0.9905
0.9970
0.9950
0.9930
0.017
Om5
50
0..03
0..03
85
V/V
Nonlinearity iNote
2)
NL
VIN=:!:7V.Rl21kCl
OUT error
VIN
=
:t10V,
Rl~ 2kl! {Note 31
%F.S
Maximum Output
error
"-'--'........._.._-.."-'_.
Power Supply Rejection
Supply Current
Peak Loed
Current
. .-.......-----
Output
Resistance
Ollsel Voltage Nulling Range
Input Voltage Range
(Reduced
NOTES:
Accuracy)
Ralio
V'N=+10V,OV.-10V
Rs = 0 1020kCl(Note 2)
Rl ,,2kn in all combinations
VS=:t6VIO:t1I1V
No Load
mV
mV/V
mA
mA
II
mV
PSRR
'SY
'ltPK.
Re
dVos
IVA
0.10
19
70
0.71
25
-
-
-
-
0.15
19
70
2
:t80
:t11,S
1,42
25
2
Rp ~ IkO
-
-
-
-
-
-
:tSO
:tl1.5
......-........-...
v
1.
Electrical
arameters are pulse tested on automated test equipment. Total
p
teSt time
at
eaCh temperature
is limited to less than
one
second maximum
to keep Tj approximately equal to TA
2.. Parameters specified with
Rs~ 20kn are
testedat As
on.
Limits in
lest
program are adjusled
to lake into
account worst clSe
voltage offset
induced by As
3. Nonlineartty is computed using linear regression techniques
with data
from ti,e points (e.g., -10V.
-5V.
OV.+5V. + 10Vfor t tOVfull-scale linearity;
- 7V, -3.5V. OV.+3.5V. and + 7V lor :t7V lull-scale linearity).
-
20kfl.
1.8.. Ie max x
20kll.
-
-2-
.
ANALOG
DEVICESfAX-ON-DEMAND
HOTLINE
- Page ~
.'
BUF-O3
ELECTRICAL
PARAMETER
Slew Rate
Input Olfset Voltage
CHARACTERISTICS
SYMBOL
SR
Vas
TCVos
18
Avo
at Vs =:!: 15V,-55°C:<; TA'5 +125°C, TA = Tj, unless otherwise
CONDITIONS
RL
21<11, L = SOpF
C
noted.
(Note 1)
MAX
UNITS
MIN
BUF-O3A
MAX
TYP
MIN
BUF-O3B
TYP
-
_.
220
6
...
20
.
220
-
35
170
90
VII's
mV
. ..
p.v;oC
nA
Rs
2k!1
-
10
AverageInput
Offset
Voltage DrIft
Inp!-!,lBlasCurrent
Vollage Gain
As:S 2k!l. (Note 2)
TA=+12S"C
RL 2kll. VIN=il0V
-
-
50
25
5
0.15
100
75
--
-
-
0.9902
90
30
0.9942
8
0.0020 0.0055
GainDriftwithTemperature
Power Supply Rejection Ratio
PSRR
ISY
Vs:7Vto;!:15V
TA=+12SDC
-
.-.
-
1.26
-
-
-
2.24
24
-
VIV
ppml"C
SupplyCurrent
-
18
24
-
otherwise
0.20
18
mVIV
-.
mA
OBS
ELECTRICAL
CHARACTERISTICS
SYMBOL
PARAMETER
Slew
Rate
SR
Input
-'-" Olfset Volta~e
....----------.-----..
Avera~e Input Offsel
Voltage Drift
Input Bias Current
Vas
TCVes
.""-"--"""-'---".-"-'-.
at Vs
=
:!:1SV. 0°
C ~ TA ~ + 70° C, TA "" Ti' unless
noted.
CONDITIONS
BUF-O3E
MIN TYP MAX
240
IIIIN
BUF-O3F
TYP MAX
240
RL;::2kO
-
14
Rs'; 2k{l. CL 50pF
Rs:S2kl1.\Note2j
...
18
TA=+70.C
RL'" 2k.f!
Voltage Gain (V1N~' 1: 10VI
Gain Drift with Temperature
""""""""---"'
Avo
.
'-.'.
Power SuPPly Rejection Ratio
""""---"'...
PSRA
'Sy
VS=-:!7VIOI15Y
TA"'+70'C
Supply Current
NOTES;
1. In order 10operate the device at an ambienltemperatureot+ 125DC,more
extensive heat sinking must be used to ensure that the chip temperature
never exceeds Ihe absolute maximumot +175' C. The chip temperature of
+165.C Is achieved by reducing tl1ecase-to-ambient thermal resistance
to 30'CIW ie.g.. Thermalloy 2227).
2. Guaranteed by deeign.
OLE
TE
4
=
-
-
-
-
UNITS
VII's
7
28
mV
40
90
5
-
50
150
pYfDC
1.5
1.8
8
8
nA
0.9935 0.9958
5
0.12
19
-
0.9918 0.0046
-
V/V
-
-
-
ppml"C
mVIV
mA
1
25
-
-
0.16
19
1.78
25
-3-
~-
-~
ANALOG
DEVICESfAX-ON-DEMAND
HOTLINE
- Page 5
.'
BUF-O3
DICECHARACTERISTICS
1. NULL
3. INPUT
4. NEGATIVESUPPLY
...--
5. NULL
S. OUTPUT
7. POSmVE SUPPLY
OBS
PARAMETER
DIE SIZE 0,011 X 0.049 Inch. 3479 sq. mils
(taO x 1.24 mm. 2.23 Iq. mm)
WAFER TEST LIMITS at Vs= :!:1SV. j= 25°C, unless otherwise noted,
T
SYMBOL
Vos
CONDITIONS
As:$20kO
Input
Offset Voltage
Voltage Gain
Avo
Rl<: 10kfl.
V1N
~
1.10V
"
'-.--------
Power SuPPly Rejection
Ratio
PSRR
Vs~i6VtO:t18V
No Load
Supply Current
ISY
NOTE:
Electrical telta are parformed at water probe to the limits shown, Due to variationsin assemblymethodsand normal yield loss. yield after packaging is
not
guarantll8d
forstandard productdice.Consultfactoryto negotiatespecifications
based on dicelotqualification
through
sample101
assemblyand testing.
TYPICAL ELECTRICAL CHARACTERISTICS
at Vs = :!:1SV,Tj = 25° C. unless
otherwise noted,
PARAMETER
Slew
Aate
Peak
LoadCurrent
- ,.
Input 81as Current
Input Realltance
Output Resistance
Off8et
VoltllgeNulling
Range
Input Voltage Range
(Reduced Accuracy)
Power Bandwidth
Bandwidtll
Settling Time
capaCitive Load capacity
..... .....
SYM80L
SA
Il\PK)
18
RIN
Ro
CONDITIONS
Al2 2kfi, Cl
OLE
TE
BUF.O3N
BUF-O3G
LIMIT
6
LIMIT
-------
0.9940
UNITS
15
mV MAX
VNMIN
0,9960
--------
0.71
__--m
25
1.42
_---mm".,___,..
25
-----------
mV/V MAX
mA MAX
BUF-O3N
TYPICAL
220
70
40
ax 10"
2
BUF-O3G
TYPICAL
180
70
60
5 x 10"
2
UNITS
VII'S
=
50pF
--..
mA
--
pA
0
0
mV
V
AVos
IVA
PBW
BW
ts
Rp
1kO
:tSO
:tSO
:t 11,5
VIN'"10Vpop. t <:2kO
A
AVINS2Vpop
ToO.1.:t10V.tep
II
63
90
1
... ,.....'-.--"""
.'....m_.....
__m--_-
tl1.5
8
55
100
1
--m-_.. ....-- -
7
7
400
60
--------....
MHz
MHz
ns
I'F
ns
ns
"VAloiS
nVI¥'HZ
.'.._m'.'..'..-,
ClOAO
te
..._. 'n..
No Oscillations
.. m....... .....-....
Propagation Delay
....-.. ....._..-..
Rise Time
WieleBand
Input Noise
Voltage
Input Noise
IIoltageDensity
tr
Vn
en
Step Input
..,.,...
AV'H=O.5Y
DC to SOMHz
I.. 10kHz
7
7
350
50
-4-
...~
微控制器 MCU
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