Datasheet> 器件分类 > 分立半导体> 晶体管> IRFR3411TRL

IRFR3411TRL: 产品描述Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3; 产品类别分立半导体晶体管; 文件大小116KB，共11页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRFR3411TRL概述

Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR3411TRL规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）	185 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	32 A
最大漏源导通电阻	0.044 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	245
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	110 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 94393

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

HEXFET

Power MOSFET

IRFR3411

IRFU3411

DSS

= 100V

DS(on)

= 44mΩ

Description

Advanced HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The

straight lead, I-Pak, version (IRFU series) is for through-

hole mounting applications. Power dissipation levels up

to 1.5 watts are possible in typical surface mount

applications.

= 32A

D-Pak

IRFR3411

I-Pak

IRFU3411

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

110

130

0.83

± 20

7.0

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

Typ.

–––

Max.

1.2

110

Units

°C/W

www.irf.com

02/18/02

IRFR3411TRL相似产品对比

	IRFR3411TRL	IRFR3411TRLPBF	IRFR3411TRRPBF	IRFR3411TR	IRFR3411TRR
描述	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 32A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
是否Rohs认证	不符合	符合	符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, PLASTIC, DPAK-3	LEAD FREE, PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	3	3	3	3
Reach Compliance Code	compliant	unknown	unknown	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）	185 mJ	185 mJ	185 mJ	185 mJ	185 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	32 A	32 A	32 A	32 A	32 A
最大漏源导通电阻	0.044 Ω	0.044 Ω	0.044 Ω	0.044 Ω	0.044 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e0	e3	e3	e0	e0
元件数量	1	1	1	1	1
端子数量	2	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	245	260	260	NOT SPECIFIED	245
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	110 A	110 A	110 A	110 A	110 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	30	30	NOT SPECIFIED	30
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
最高工作温度	150 °C	150 °C	150 °C	-	150 °C
湿度敏感等级	-	1	1	1	-

IRFR3411TRL

IRFR3411TRL概述

IRFR3411TRL规格参数

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