Datasheet> 器件分类 > 分立半导体> 晶体管> BCX54-16TR

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BCX54-16TR: 产品描述Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小90KB，共2页; 制造商Central Semiconductor

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BCX54-16TR概述

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX54-16TR规格参数

参数名称	属性值
厂商名称	Central Semiconductor
包装说明	PLASTIC PACKAGE-3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	COLLECTOR
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	45 V
配置	SINGLE
最小直流电流增益 (hFE)	100
JESD-30 代码	R-PSSO-F3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	1.2 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	130 MHz
Base Number Matches	1

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BCX54

BCX55

BCX56

SURFACE MOUNT

NPN SILICON TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX54,

BCX55, and BCX56 types are NPN Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

MARKING CODE:

(SEE TABLE ON FOLLOWING PAGE)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BCX54

BCX55

BCX56

100

5.0

1.0

1.5

100

200

1.3

-65 to +150

UNITS

°C

°C/W

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=125°C

IEBO

VEB=5.0V

BVCBO

IC=100μA (BCX54)

BVCBO

IC=100μA (BCX55)

BVCBO

IC=100μA (BCX56)

100

BVCEO

IC=10mA (BCX54)

BVCEO

IC=10mA (BCX55)

BVCEO

IC=10mA (BCX56)

VCE(SAT)

IC=500mA, IB=50mA

VBE(ON)

VCE=2.0V, IC=500mA

VCE=2.0V, IC=5.0mA

hFE

VCE=2.0V, IC=150mA

hFE

VCE=2.0V, IC=150mA

(BCX54-10, BCX55-10, BCX56-10)

hFE

VCE=2.0V, IC=150mA

(BCX54-16, BCX55-16, BCX56-16)

100

hFE

VCE=2.0V, IC=500mA

VCE=5.0V, IC=10mA, f=100MHz

TYP

MAX

100

0.5

1.0

250

160

250

130

UNITS

μA

MHz

R4 (30-July 2008)

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