RF Power Field Effect Transistor
LDMOS, 920 — 965 MHz, 30W, 26V
2/18/2003
Preliminary
MAPLST0810-030WF
Features
Designed for 925 to 960 MHz Broadband
Commercial and Base Station
Applications.
Typical CW RF Performance at 960MHz,
26V
DC
:
P
OUT
: 30W (P
1dB
)
Gain: 18.5dB
Efficiency: 50%
Ruggedness: 10:1 VSWR @ 30W CW,
26V, 925MHz
Internally Matched
High Gain, High Efficiency and High
Linearity
Excellent Thermal Stability
Package Style
MAPLST0810-030WF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T
C
= 25 °C
Storage Temperature
Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
STG
T
J
Rating
65
20
109
-40 to +150
+200
Units
V
dc
V
dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
Θ
JC
Max
1.6
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.
RF Power LDMOS Transistor, 920-965 MHz, 30W, 26V
MAPLST0810-030WF
2/18/2003
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20 µAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0)
Gate—Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µA)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 300 mA)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 A)
Forward Transconductance
(V
GS
= 10 Vdc, I
D
= 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
Common Source Amplifier Gain
(V
DD
= 26 Vdc, I
DQ
= 300 mA, f = 920 & 960 MHz, P
OUT
= 30 W)
Drain Efficiency
(V
DD
= 26 Vdc, I
DQ
= 300 mA, f = 920 & 960 MHz, P
OUT
= 30 W)
Input Return Loss
(V
DD
= 26 Vdc, I
DQ
= 300 mA, f = 920 & 960 MHz, P
OUT
= 30 W)
Output VSWR Tolerance
(V
DD
= 26 Vdc, I
DQ
= 300 mA, f = 920 & 960 MHz, P
OUT
= 30 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol
Min
Typ
Max
Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
65
—
—
2
—
—
—
—
—
1
3
4
Vdc
µAdc
µAdc
Vdc
V
DS(Q)
—
4.0
—
Vdc
V
DS(on)
Gm
—
0.20
—
Vdc
—
2.0
—
S
C
iss
C
oss
C
rss
—
—
—
55
33
1.4
—
—
—
pF
pF
pF
G
P
EFF (ŋ)
IRL
Ψ
—
—
—
18.5
50
12
—
—
—
dB
%
dB
No Degradation In Output Power
Before and After Test
2
RF Power LDMOS Transistor, 920-965 MHz, 30W, 26V
MAPLST0810-030WF
2/18/2003
Preliminary
24
22
20
V
DD
= 26V, f = 960MHz, I
DQ
= 300mA,
100kHz Tone Spacing
60
50
18
16
14
12
10
15
Gain
30
20
Efficiency
10
0
20
25
30
35
40
45
50
P
OUT
(W) PEP
Graph 1. CW: Power Gain and Drain Efficiency vs. Output Power
-20
-30
-40
VDD = 26V, f = 960MHz, IDQ = 300mA,
100kHz Tone Spacing
3rd Order
IMD (dBc)
-50
-60
-70
-80
-90
15
20
25
30
35
40
45
50
5th Order
7th Order
P
OUT
(W) PEP
Graph 2. Intermodulation Distortion vs. Output Power
3
Efficiency (%)
Gain (dB)
40
RF Power LDMOS Transistor, 920-965 MHz, 30W, 26V
MAPLST0810-030WF
2/18/2003
Preliminary
Package Dimensions
Test Fixture Circuit Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
4
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