PD-91806D
IRHE7130
JANSR2N7261U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level
IRHE7130
IRHE3130
IRHE5130
IRHE8130
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
100V, N CHANNEL
REF: MIL-PRF-19500/601
RAD Hard HEXFET
TECHNOLOGY
I
D
8.0A
8.0A
8.0A
8.0A
R
DS(on)
0.18
0.18
0.18
0.18
QPL Part Number
JANSR2N7261U
JANSF2N7261U
JANSG2N7261U
JANSH2N7261U
LCC-18
Description
IR HiRel RAD-Hard HEXFET technology provides high
performance power MOSFETs for space applications.
This technology has over a decade of proven performance
and reliability in satellite applications. These devices have
been characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Light Weight
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
8.0
5.0
32
25
0.20
± 20
130
8.0
2.5
5.5
-55 to + 150
300 (for 5s)
0.42 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Package Mounting Surface Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2
1
International Rectifier HiRel Products, Inc.
2019-02-05
IRHE7130
JANSR2N7261U
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Pre-Irradiation
Test Conditions
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
100
–––
–––
–––
2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
0.10 –––
––– 0.18
––– 0.185
–––
4.0
––– –––
–––
25
––– 250
––– 100
––– -100
–––
50
–––
10
–––
20
–––
25
–––
32
–––
40
–––
40
6.1
1100
310
55
–––
–––
–––
–––
V
V/°C
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 5.0A
V
GS
= 12V, I
D1
= 8.0A
V
V
DS
= V
GS
, I
D
= 1.0mA
S
V
DS
= 15V, I
D2
= 5.0A
V
DS
= 80V, V
GS
= 0V
µA
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D1
= 8.0A
nC
V
DS
= 50V
V
GS
= 12V
V
DD
= 50V
I
D1
= 8.0A
ns
R
G
= 2.35
V
GS
= 12V
nH
Measured from the center of drain pad to
center of source pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
32
1.5
270
3.0
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
DD
≤
50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
J-PCB
Parameter
Junction-to-Case
Junction-to-PC Board
Min.
–––
–––
Typ.
–––
19
Max.
5.0
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L = 4.1mH, Peak I
L
= 8.0A, V
GS
= 12V
V
I
SD
8.0A, di/dt
140A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-02-05
IRHE7130
JANSR2N7261U
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
100 kRads (Si)
1
Min.
100
2.0
–––
–––
–––
–––
–––
–––
Up to
300k - 1000 kRads (Si)
2
Units
Test Conditions
Min.
Max.
Max.
–––
100
–––
V
V
GS
= 0V, I
D
= 1.0mA
4.0
100
-100
25
0.18
0.18
1.5
1.25
–––
–––
–––
–––
–––
–––
4.5
100
-100
50
0.24
0.24
1.5
V
nA
nA
µA
V
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D2
= 5.0A
V
GS
= 12V, I
D2
= 5.0A
V
GS
= 0V, I
S
= 8.0A
1. Part numbers IRHE7130 (JANSR2N7261U)
2. Part numbers IRHE3130 (JANSF2N7261U) and IRHE5130(JANSG2N7261U), IRHE8130 (JANSH2N7261U)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
@VGS=0V
100
100
@VGS=-5V
100
90
VDS (V)
@VGS=-10V @VGS=-15V @VGS=-20V
100
70
80
50
60
–––
120
100
80
VDS
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2
3
International Rectifier HiRel Products, Inc.
2019-02-05
IRHE7130
JANSR2N7261U
Pre-Irradiation
Fig 1.
Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 2.
Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 3.
Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
Fig 5.
Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure
4
International Recti-
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
2019-02-05
IRHE7130
JANSR2N7261U
Pre-Irradiation
Fig 7.
Typical Transient Response of Rad Hard HEXFET
During 1x10
12
Rad (Si)/Sec Exposure
Note: Bias Conditions during radiation: V
GS
= 12 Vdc, V
DS
= 0 Vdc, Fig-9,10,11,12
Fig 9.
Typical Output Characteristics
Pre-Irradiation
Fig 10.
Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 11.
Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
5
Fig 12.
Typical Output Characteristics
Post-Irradiation 1 Mega Rads (Si)
2019-02-05
International Rectifier HiRel Products, Inc.
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