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70V27L25G

产品描述Multi-Port SRAM, 32KX16, 25ns, CMOS, CPGA108
产品类别存储    存储   
文件大小192KB,共22页
制造商IDT (Integrated Device Technology)
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70V27L25G概述

Multi-Port SRAM, 32KX16, 25ns, CMOS, CPGA108

70V27L25G规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
包装说明PGA, PGA108,12X12
Reach Compliance Codeunknown
最长访问时间25 ns
I/O 类型COMMON
JESD-30 代码S-XPGA-P108
JESD-609代码e0
内存密度524288 bit
内存集成电路类型MULTI-PORT SRAM
内存宽度16
端口数量2
端子数量108
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织32KX16
输出特性3-STATE
封装主体材料CERAMIC
封装代码PGA
封装等效代码PGA108,12X12
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
电源3.3 V
认证状态Not Qualified
最大待机电流0.003 A
最小待机电流3 V
最大压摆率0.21 mA
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式PIN/PEG
端子节距2.54 mm
端子位置PERPENDICULAR
Base Number Matches1

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HIGH-SPEED 3.3V
32K x 16 DUAL-PORT
STATIC RAM
Features:
x
x
x
IDT70V27S/L
x
x
x
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed access
– Industrial: 35ns (max.)
– Commercial: 15/20/25/35/55ns (max.)
Low-power operation
– IDT70V27S
Active: 500mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V27L
Active: 500mW (typ.)
Standby: 660
µ
W (typ.)
Separate upper-byte and lower-byte control for bus
matching capability
Dual chip enables allow for depth expansion without
external logic
x
x
x
x
x
x
x
x
IDT70V27 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
LVTTL-compatible, single 3.3V (±0.3V) power supply
Available in 100-pin Thin Quad Flatpack (TQFP), 108-pin
Ceramic Pin Grid Array (PGA), and 144-pin Fine Pitch BGA
(fpBGA)
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/
W
L
UB
L
CE
0L
R/W
R
UB
R
CE
0R
CE
1L
OE
L
LB
L
CE
1R
OE
R
LB
R
I/O
8-15L
I/O
0-7L
BUSY
L
(1,2)
I/O
Control
I/O
Control
I/O
8-15R
I/O
0-7R
BUSY
R
(1,2)
A
14L
A
0L
Address
Decoder
A
14L
A
0L
CE
0L
32Kx16
MEMORY
ARRAY
70V27
Address
Decoder
A
14R
A
0R
CE
1L
OE
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
A
14R
A
0R
CE
0R
CE
1R
OE
R
R/
W
L
SEM
L
INT
L
(2)
R/
W
R
SEM
R
NOTES:
1)
BUSY
is an input as a Slave (M/S=V
IL
) and an output as a Master (M/S=V
IH
).
2)
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
M/
S
(2)
INT
R
3603 drw 01
(2)
JANUARY 2001
6.01
1
©2000 Integrated Device Technology, Inc.
DSC 3603/7

70V27L25G相似产品对比

70V27L25G 70V27L15G 70V27L55G 70V27L20G 70V27L35G
描述 Multi-Port SRAM, 32KX16, 25ns, CMOS, CPGA108 Multi-Port SRAM, 32KX16, 15ns, CMOS, CPGA108 Multi-Port SRAM, 32KX16, 55ns, CMOS, CPGA108 Multi-Port SRAM, 32KX16, 20ns, CMOS, CPGA108 Multi-Port SRAM, 32KX16, 35ns, CMOS, CPGA108
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
包装说明 PGA, PGA108,12X12 PGA, PGA108,12X12 PGA, PGA108,12X12 PGA, PGA108,12X12 PGA, PGA108,12X12
Reach Compliance Code unknown unknow unknow unknown unknown
最长访问时间 25 ns 15 ns 55 ns 20 ns 35 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-XPGA-P108 S-XPGA-P108 S-XPGA-P108 S-XPGA-P108 S-XPGA-P108
JESD-609代码 e0 e0 e0 e0 e0
内存密度 524288 bit 524288 bi 524288 bi 524288 bit 524288 bit
内存集成电路类型 MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM
内存宽度 16 16 16 16 16
端口数量 2 2 2 2 2
端子数量 108 108 108 108 108
字数 32768 words 32768 words 32768 words 32768 words 32768 words
字数代码 32000 32000 32000 32000 32000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
组织 32KX16 32KX16 32KX16 32KX16 32KX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC
封装代码 PGA PGA PGA PGA PGA
封装等效代码 PGA108,12X12 PGA108,12X12 PGA108,12X12 PGA108,12X12 PGA108,12X12
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 3.3 V 5 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.003 A 0.003 A 0.003 A 0.003 A 0.003 A
最小待机电流 3 V 3 V 3 V 3 V 3 V
最大压摆率 0.21 mA 0.225 mA 0.18 mA 0.22 mA 0.19 mA
标称供电电压 (Vsup) 3.3 V 5 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子节距 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
端子位置 PERPENDICULAR PERPENDICULAR PERPENDICULAR PERPENDICULAR PERPENDICULAR
厂商名称 IDT (Integrated Device Technology) - - IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Base Number Matches 1 1 1 1 -

 
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