Semiconductor
IRF540, IRF541, IRF542,
IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17421.
November 1997
Features
• 25A and 28A, 80V and 100V
• r
DS(ON)
= 0.077Ω and 0.100Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
IRF540
IRF541
IRF542
IRF543
RF1S540
RF1S540SM
PACKAGE
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-262AA
TO-263AB
BRAND
IRF540
IRF541
IRF542
IRF543
RF1S540
RF1S540SM
Symbol
D
G
S
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1997
File Number
2309.3
5-1
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF541
80
80
28
20
110
±20
150
1
230
-55 to 175
300
260
IRF542
100
100
25
17
100
±20
150
1
230
-55 to 175
300
260
IRF543
80
80
25
17
100
±20
150
1
230
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
IRF540, RF1S540,
RF1S540SM
100
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . V
DGR
100
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I
D
28
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
T
C
= 100
20
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
DM
110
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . T
pkg
150
1
230
-55 to 175
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 150
o
C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
IRF540, IRF542,
RF1S540, RF1S540SM
IRF541, IRF543
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 10)
100
80
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 150
o
C
2
-
-
-
-
-
-
-
-
-
4
25
250
V
V
V
µA
µA
MIN
TYP
MAX
UNITS
On-State Drain Current (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
IRF542, IRF543
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF540, IRF541,
RF1S540, RF1S540SM
IRF542, IRF543
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= 10V
(Figure 7)
28
25
-
-
-
-
-
±100
A
A
nA
Ω
Ω
S
ns
ns
ns
ns
nC
nC
nC
I
GSS
r
DS(ON)
V
GS
=
±20V
I
D
= 17A, V
GS
= 10V (Figures 8, 9)
-
-
-
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 28A, V
DS
= 0.8 x Rated
BV
DSS
, I
g(REF)
= 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
erating Temperature
V
DS
≥
50V, I
D
= 17A (Figure 12)
V
DD
= 50V
,
I
D
≈
28A, R
G
≈
9.1Ω, R
L
= 1.7Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
8.7
-
-
-
-
-
-
-
0.060
0.080
13
15
70
40
50
38
8
21
0.077
0.100
-
23
110
60
75
59
-
-
5-2
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured From the
Contact Screw on Tab
To Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) from Package to
Center of Die
Internal Source Inductance
L
S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 11)
MIN
-
-
-
-
TYP
1450
550
100
3.5
MAX
-
-
-
-
UNITS
pF
pF
pF
nH
-
4.5
-
nH
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance
Junction to Ambient
R
θJC
R
θJA
R
θJA
Free Air Operation
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
-
-
-
-
-
-
1
80
62
o
C/W
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
28
110
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 27A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 28A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 28A, dI
SD
/dt = 100A/µs
-
70
0.44
-
150
1.0
2.5
300
1.9
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 440µH, R
G
= 25Ω, peak I
AS
= 28A. (Figures 15, 16).
5-3
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
0
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
Unless Otherwise Specified
30
I
D
, DRAIN CURRENT (A)
24
IRF540, IRF541
RF1S540, RF1S540SM
18
IRF542, IRF543
12
6
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
Z
θJC,
TRANSIENT
THERMAL IMPEDANCE (
o
C/W)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10
-5
SINGLE PULSE
10
-4
10
-3
10
-2
10
-1
t
1
t
2
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
IRF540, 1, RF1S540, SM
100
IRF542, 3
I
D
, DRAIN CURRENT (A)
IRF540, 1, RF1S540, SM
IRF542, 3
T
C
= 25
o
C
10µs
I
D
, DRAIN CURRENT (A)
100µs
50
80µs PULSE TEST
40
30
20
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
1ms
10
10ms
IRF540, 2
RF1S540, SM
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
J
= MAX RATED
SINGLE PULSE
1 1
IRF541, 3
V
GS
= 6V
V
GS
= 5V
10
V
GS
= 4V
0
0
12
24
36
48
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
60
DC
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5-4
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves
50
80µs PULSE TEST
Unless Otherwise Specified
(Continued)
100
V
GS
= 8V
V
GS
= 7V
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
80µs PULSE TEST
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
I
D
, DRAIN CURRENT (A)
40
V
GS
= 10V
30
10
V
GS
= 6V
20
V
GS
= 5V
10
V
GS
= 4V
0
0
1.0
2.0
3.0
4.0
5.0
175
o
C
1
25
o
C
0.1
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.0
r
DS(ON)
, DRAIN TO SOURCE
80µs PULSE DURATION
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
3.0
V
GS
= 10V, I
D
= 28A
2.4
0.8
ON RESISTANCE (Ω)
0.6
1.8
0.4
1.2
0.2
V
GS
= 10V
V
GS
= 20V
0
25
50
75
100
125
0.6
0
I
D
, DRAIN CURRENT (A)
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
3000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
C
ISS
1.15
C, CAPACITANCE (pF)
2400
1.05
1800
0.95
1200
C
OSS
600
C
RSS
0.85
0.75
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
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